集成電路晶體管 的英文怎麼說

中文拼音 [jíchéngdiànlùjīngtǐguǎn]
集成電路晶體管 英文
integrated circuit transister
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the 1960s the ic market was broadly on bipolar transistors.

    六十年代集成電路市場主要為雙極型晶體管。
  2. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  3. The modern successor to the transistor is the integrated circuit.

    晶體管的現代后繼者是集成電路。
  4. Circuit board, integrated circuit, resistor, capacitor, chips, rectifier, led, diode, transistor, laser pick - up head and all kinds of electronics component

    電路板集成電路電阻電容主晶元整流管發光管二極體三極體鐳射光頭等各類電子零件
  5. If none of the passive - component tests fail, the tester will then test active components, such as transistors and ics

    如果所有的無源器件都通過測試，然後對有源器件測試，如晶體管和集成電路。
  6. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  7. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  8. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  9. The paper are investigating several alternatives for example quantum dot cellular automata and single electron transistor to substitute conventional field effect transistors ( fet ’ s ) for ultra large scale integrated circuit ; and i take research on the modeling of single electron transistor and single electron cicuit

    基於以上考慮，本文研究一些新的基於量子力學原理的器件如量子點細胞自動機（ qca ） 、單電子晶體管（ set ）取代以fet器件為基礎超大規模集成電路，主要在單電子晶體管建模和單電子電路綜合做了一些研究工作。
  10. Discrete semiconductor devices and integrated circuits - field - effect transistors - additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors

    分立半導體器件和集成電路.場效應晶體管.電源轉換場效應晶體管測量方法中附加功率特性和amds
  11. The auxiliary products for auto electric appliances include : application - specific integrated circuit for auto and motorcycle flashers, application - specific integrated circuit for wiper intermittent relays, transistors for auto acoustics, power darlington transistors for auto generator voltage regulators, power darlington transistors for auto ignition systems, high frequency transistors for auto remote controllers, regular parts for auto electric appliances, chips of semi conductor etc

    產品有：汽車和摩托車閃光器專用集成電路，汽車雨刮間歇繼電器專用集成電路，汽車電壓調節器用功率達林頓管，汽車點火器系統用功率達林頓管，汽車遙控器用高頻管，半導體晶元等。
  12. One ic replaces many transistors in a computer ; result in a continuation of the trends begun in the second generation

    一個集成電路代替了計算機中的許多晶體管，導致了始於第二代的一些趨勢的繼續。
  13. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  14. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  15. The team hopes to link nanofluidic transistors together into an integrated circuit within the year as the next step to harnessing massive numbers of transistors in parallel

    這個研究團隊的下個目標，是在今年內將奈米流體晶體管連結成集成電路，以便同時控制多個晶體管。
  16. Discrete semiconductor devices and integrated circuits - bipolar transistors

    分立半導體器件和集成電路.雙極晶體管
  17. Semiconductor integrated circuits. detail specification for type jb3081, jb3082 transistor arrays

    半導體集成電路. jb3081 jb3082型晶體管陣列詳細規范
  18. A switch ic for analog signal processing is designed and implemented, which can fulfill the functions of sampling, weighting, controlling and summing of high frequency analog signals. the circuit consists of three parts : four channel analog switches, a voltage reference and the control circuitry. each analog switch is comprised of two high - transconductance n - mosfets with high w / l ratio, which realize the fine tuning and coarse tuning of the input signal respectively

    本文研究並設計了一種可對高頻信號進行取樣、加權、控制、疊加的模擬信號處理丌關集成電路，它包括模擬開關、電壓基準源和移位寄存器三個功能模塊，通過兩個高寬長比的高跨導nmos晶體管實現權值的粗調和微調。
  19. First there was large scale integration ( lsi ), with hundreds and thousands of transistors per chip, then came very large scale integration ( vlsi ), with tens of thousands and hundreds of thousands of transistors

    首先，出現了一個晶元上具有數百和數千個晶體管的大規模集成電路（ lsi ） ，接著出現了一個晶元上具有數萬和數十萬個晶體管的超大規模集成電路（ vlsi ） 。
  20. Semiconductor devices. discrete devices and integrated circuits. part 8 : field - effect transistors

    半導體器件.分立器件和集成電路.第8部分:場效應晶體管
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