雜質擴散系數 的英文怎麼說

中文拼音 [zázhíkuòsǎnxìshǔ]
雜質擴散系數 英文
impurity diffusion coefficient
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 擴 : 動詞（擴大） expand; enlarge; extend
  • 散 : 散動詞1. （由聚集而分離） break up; disperse 2. （散布） distribute; disseminate; give out 3. （排除） dispel; let out
  • 系 : 系動詞（打結; 扣） tie; fasten; do up; button up
  • 數 : 數副詞（屢次） frequently; repeatedly
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  • 系數 : [數學] coefficient; ratio; modulus; quotient; factor
  1. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  2. The available equipments can not measure the temperature of the substrate in the diffusion process, and so it is necessary to study the 4 - d temperature distribution in the processed region beforehand. the purpose of this work is to theoretically study the laser induced diffusion process, which is performed within a non - homogenous temperature field

    眾所周知，擴散系數是溫度的敏感函數，而現有的實驗裝置無法測得擴散過程中基片內的溫度分佈，因此，為計算雜質濃度分佈，首先需要研究激光照射下半導體基片內的四維溫度場結構。
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