離子束工藝 的英文怎麼說

中文拼音 [lízishùgōngyì]
離子束工藝 英文
ion beam technology
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 工 : Ⅰ名詞1 （工人和工人階級） worker; workman; the working class 2 （工作; 生產勞動） work; labour 3 ...
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  • 離子 : [物理學] ion
  1. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  2. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  3. The results indicate that the optical performance and coating quality have been improved drastically by using ion - assisted deposition technology in the vacuum deposition, in comparison with the traditional thermal vapor deposition

    結果表明，與傳統的熱蒸發鍍膜工藝相比，在真空沉積過程牛採用離子束輔助沉積技術，可以大大提高膜層的光學特性及膜層品質。
  4. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  5. The new requirements for applications in material surface engineering urge a new type of hipib apparatus, for instance, the generation of medium - power - density ion beam, high - stability ion beams and long - lifetime ion source etc. therefore, characterization of high power ion diode - magnetically insulated ion diode ( mid ), the key issue for the technique development, is considered in this dissertation. the investigations of hipib generation and its mechanisms have been carried out in a temp - 6 hipib apparatus, in order to optimize the configuration of ion diode and its ion beam parameters for materials surface treatments

    針對強流脈沖離子束（ hipib ）技術研發的關鍵環節?高功率離子二極體（磁絕緣離子二極體）的工作特性，在temp - 6型hipib裝置上開展了hipib產生及其形成機理的實驗研究，確定了優化的離子二極體結構和輻照工藝參數；通過hipib輻照金屬材料燒蝕行為的系統研究，揭示了燒蝕表面形貌的形成規律，為徹底弄清hipib與材料相互作用機理提供了實驗依據。
  6. Property comparison of optical thin films prepared by e - beam, ion assisted deposition and ion beam sputtering

    離子輔助和離子束濺射三種工藝對光學薄膜性能的影響
  7. In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films

    本文對離子源的濺射特性進行了研究，採用離子束濺射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜，探索該法制備cn _ x薄膜的最佳工藝參數，並利用tin _ y薄膜為襯底以促進cn _ x薄膜的生長。
  8. Ion beam induced surface modification of polymer was extensively discussed

    介紹了運用高能離子束對聚合物材料進行表面改性的新工藝。
  9. The composition and structure of the films synthesized by ibed were examined by rbs, xrd and edx. the photoluminescence spectra at 1535nm of er3 + - siox films were measured with pumped. the relationship between optical properties of er - doped films and technologies of ibed was summarized

    對離子束增強沉積工藝制備的薄膜，採用rbs 、 edx和xrd進行成分分析和微觀結構分析，測定了薄膜在1535nm處的光致熒光，總結了薄膜的特性和性能與制備工藝的關系。
  10. The structure is shown to achieve extremely low reflectance over a wide field of view and a wide light wave band. in the second section, we analyzed the etching surface

    在衍射光學元件的製作實驗部分，本論文完成的主要工作是進行刻蝕工藝的研究，對離子束刻蝕產生的面形進行了理論的分析。
  11. The principle, characteristic, progress and the developmental trend of plasma jet surface metallurgy and laser cladding are described, and the two technologies are compared through analyzing the structure and organization of coatings

    摘要介紹了等離子束表面冶金和激光熔覆技術的原理、特點和研究現狀，分析比較了兩種技術的工藝特點及塗層組織結構特點。
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