離子束 的英文怎麼說

中文拼音 [lízishù]
離子束 英文
[物理學] ion beam; ionic beam; ionic jet離子束成像 ion beam imaging; 離子束鍍膜設備 ion beam deposition equipment; 離子束加工 ion beam machining; 離子束加工設備 ion beam process equipment; 離子束聚變裝置 ion beam fusion device; 離子束拋光 ion beam polishing; 離子束掃描 ion-beam scanning; 離子束蒸發 ion beam evaporation; 離子束注入 ion beam injection
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 離子 : [物理學] ion
  1. In most recent studies, researchers have analyzed aluminum - rich minerals such as anorthite and hibonite using an ion microprobe, which bombards a sample with a focused ion beam to release secondary ions from the sample ' s surface

    在最新的研究中，科學家使用離子微探針來分析鈣長石、黑鋁鈦鈣石等富含鋁的礦物，以聚焦的離子束撞擊樣本，使樣本表面釋出次級離子。
  2. Mutant breeding l - argining - producing bacterium by n beam

    精氨酸產生菌的離子束誘變育種
  3. Numerical simulation of the beam optics characteristics in a high energy and high current negative ion beam system

    高能強流負離子束系統束光學特性的數值模擬
  4. Analysis of damage induced by fib irradiation in microprocess

    聚焦離子束在精細加工中引起損傷的分析
  5. Effect of pollen irradiation on hybridization of wheat and eltrigia intermedia and their embryo development

    離子束對萌發西瓜種子和西瓜花粉的誘變效應研究
  6. Formation of la silicides by mevva ion implantation

    源離子束合成鑭硅化物
  7. Lin h, li l and zeng l., " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings ", chin. opt. lett., 3 ( 2 ), 63 ( 2005 )

    林華， "介質膜光柵:光刻膠掩模占寬比和離子束刻蝕槽深的監控" ，博士論文，導師:李立峰（ 2006 ）
  8. The effect of ion implantation on the giant magnetoresistance of granular film

    離子束改性對顆粒膜巨磁電阻效應的影響
  9. Ni ion beam enhanced deposition of nitride film

    鎳離子束動態增強沉積多元氮化物膜
  10. These results indicate that the magnetic field should have upper stability when the particle beam is low polarized while the requirement of the stability of the magnetic field can be lowered when the particle beam is high polarized in the experiment of producing the polarization of the particle beam. and the complementariness can be used as a negative feedback to stabilize the polarization of particle

    這一結果表明，在產生離子束極化的實驗中，在離子束低度極化的前期階段，磁場應具有較高的穩定性，而在離子束極化度較高的後期階段，磁場的穩定性要求可以放鬆；自旋的縱向分量的無規漲落和橫向分量的無規漲落的互補性有可能用來做成穩定離子極化的負反饋。
  11. J. r. stevens et al., “ electrochromism of wo3 - based films in contact with a solid li - doped siloxane elastomer electrolyte, ” applied optics, 26, pp. 3489 - 3490, 1987

    鄭耀爵， 「以離子束濺鍍法制備氧化銦錫薄膜之光學、電學及可靠性質之研究， 」國立成功大學，碩士論文， 2003 。
  12. Mutation spectrum analysis oftransglutaminase gene in streptomyces fradiae after irradiation by n ion

    氟氏鏈黴菌離子束注入突變譜的分析
  13. The ast ( anthocyanin spotted testa ) mutant, which was induced by carbon ion beam, was a single recessive gene mutant of arabidopsis thaliana and involved in the anthocyanin biosynthesis

    擬南芥ast （ anthocyaninspottedtesta ）突變體是由碳離子束誘導產生的與花青苷生物合成有關的突變體，受單隱性核基因控制。
  14. The authors discovered four peculiar phenomena, i. e., the self seed - setting and its genetic stability of the autoteraploid rice, the early - generation stabilization in the cites between alloploid rices, the self embryogenesis of autoteraploid rice wider isolated conditions, and a high seed - setting percentage in some plants of autotetraploid rice after the treatment of ion beam, in the research of autotriploid and autotetraploid rices

    在對同源三倍體水稻和同源四倍體水稻的研究中發現了值得注意的4種奇特現象，即同源三倍體水稻的結籽現象及其倍性的遺傳穩定性、在異倍性水稻間的雜交後代中早世代性狀穩定遺傳的現象、在隔離條件下同源四倍體的胚自發現象和離子束注入后同源四倍體水稻單株的高結實現象。
  15. Bunch of ions

    離子束節
  16. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  17. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  18. A. thalianas were respectively introduced by ion beam with a collection of donor dna having a gradient genetic relation with a. thaliana. in vegetative phase of tl, the ratio of phenotypic variation showed no distinct difference among these transformed populations

    用離子束介導與擬南芥菜親緣關系從近到遠一系列的外源供體的全dna轉化擬南芥菜，在轉化當代營養生長期，各轉化群體的表型變異情況沒有明顯的差別。
  19. Finally, the characteristics of ion curren extraction in different conditions are simulationed with magic software, and the parameter of best emission surface is obtained

    最後，採用magic程序對高頻離子源不同引出參數下的束流引出特性進行了數值模擬，得到了獲得最佳的引出離子束所要求的等離子體發射面參數。
  20. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
分享友人
分享到 Line

分享到臉書