離子沉積作用 的英文怎麼說

中文拼音 [lízichénjīzuòyòng]
離子沉積作用 英文
ionic deposition
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 用 : Ⅰ動詞1 （使用） use; employ; apply 2 （多用於否定: 需要） need 3 （敬辭: 吃; 喝） eat; drink Ⅱ名...
  • 離子 : [物理學] ion
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  2. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  3. The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause

    對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。
  4. Many studies had attempted to characterize chemical weathering process by focusing on geochemisty of river particulate and sediment. the sediment geochemistry may reflect and compare with the carbonates and silicates weathering degree by introducing the chemical index of alteration ( cia ) and new sediment index of variation ( siv ) and elemental molar abundance ratio of the sediment. the one main objective of this study would provide and compare the relative weathering intensities of silicates and carbonates with the different basins

    2沉積物地球化學與化學風化進程和機械剝蝕率化學風化指數與化學風化率屬于表徵化學風化作用意義不同的函數，前者為相對概念反映流域巖石在原巖基礎上己發生淋溶作用的深度，主要受到了氣候因子的深刻影響（中國流域沉積物化學風化指數由北到南呈有規則的遞增序列，氣候因子對風化進程的影響掩蓋了巖性的巨大差異） ，而化學風化率含義是指單位流域面積巖石風化淋溶產生的離子絕對總量。
  5. The latter electrode is made by a 3 - electrode system with cv voltage. in the system, ta foil is acted as the working electrode, a pt foil as the assistant electrode and ag / agcl electrode as the reference electrode. stuff rucl _ 3 ? nh _ 2o is confected into electrolyte. after electrolyzing with cv voltage, ru ion can deposit on ta foil in the fashion of hydrated ru compound

    在循環伏安法中，用原料水合三氯化釕配製成的電解液，將鉭片作工作電極、鉑片作輔助電極、銀/氯化銀電極作參比電極組成三電極系統，向電解池通入循環伏安的電壓進行電解，使釕離子以水合釕化物的形式沉積在鉭基體上。
  6. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  7. Due to great advantage of the excimer laser in photoelectron material, photoelectron technology research, so in this thesis, a xecl excimer laser is designed in order to solve some problem in semiconductor film, cmr film, quartz film and other kind of film application, optical etching field, interaction between laser and material, material plasma study. the parameters of the excimer laser is e also measured and analyzed

    因此本文以氣相沉積、外延生長、巨磁薄膜、金剛石及其它薄膜制備及后續的光刻，激光與物質的相互作用，等離子體研究為目的，研製獲得了激光脈寬18ns ，單脈沖能量150mj ，矩形光斑大小2cm 1cm ，束散角3mrad ，最高重復頻率5hz的xecl準分子激光器。
  8. The paper studied three aspects of extracelluar enzymes in sediments of the tidal flat wetland, namely 1 ) the distibution of five sorts of extracellular enzymes in sediments in the east end of chongming island along the elevation gradient or community succession series, the relationships between the activities of enzymes and the ecological factors, and functions of extracellular enzymes in the process of community succession ; 2 ) the effects of the heavy metal ions and edta on the activity of alkaline phosphatase in sediments of the east end of chongming island by adding and removing of heavy metal ions, discussing whether the activities of extracellular enzymes could be taken as the indicators for the environmental status ; 3 ) the variations of the activities of extracellular enzymes in sediments in the east end of hengsha island after the discarding clay

    本文以長江口典型濕地?崇明東灘為例，首次研究了沿高程梯度或沿植被演替系列沉積物中堿性磷酸酶等五種胞外酶活性的空間分佈規律，分析了胞外酶活性與環境因子的相互關系及其產生機制，討論了胞外酶活性在濕地植被演替中的作用。同時以崇明東灘沉積物為對象，運用重金屬離子的添加和去除等方法，研究了重金屬離子對沉積物中堿性磷酸酶活性的影響，利用胞外酶活性的變化探討了崇明東灘重金屬污染的狀況。此外，本文還研究了橫沙東灘吹泥試驗工程對沉積物環境因子和胞外酶活性的影響並進行了對比分析。
  9. The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd. when the temperature ( ts < 450, ta < 800 ) is low, the structure of the samples is still amorphous. the majority content of the sample is sio 90 by the aid of xps

    利用雙離子束濺射沉積技術，通過共濺射方法制備了si - sio _ 2薄膜，研究了沉積時間、工作氣壓p _ （ ar ） 、基片溫度等對沉積速率的影響，用tem和xrd分析了樣品的結構。
  10. This article reviewed the current status and evolution of unconventional co - deposition mechanisms in zn - based alloy, analysed various standpoints, such as film adsorption mechanism, electrochemical dynamics mechanism, not enough potential depositional mechanism, the effects of ionic. soft and rigid acidity, quantum chemical explanation and interphase effect mechanism, and compared each advantage and deficiency, respectivly ; it could be advantageous to more studies regards to unconventional co - deposition mechanisms in zn - based alloy

    摘要綜述了鋅基合金異常共沉積的機理研究進展情況，通過對膜吸附機理、電化學機理、欠電勢沉積機理、離子軟硬度的影響、量子化學解釋和界面作用機理等各種不同觀點的介紹和分析，總結了各自的優勢和不足，為鋅基合金異常共沉積的機理進一步研究提供了幫助。
  11. By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character

    採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。
  12. Our group has prepared nanometer - scale metal films in layer structures on glassy carbon ( gc ) substrate by cyclic voltammetric deposition. by using co as probe molecule, we have revealed for the first time, abnormal ir effects ( aires ) on these layer nanostructured films. the alres consists of several abnormal ir features including the enhancement of ir absorption, the inversion of ir band direction ( anti - absorption ), and the increase of fwhm ( increase of the number of different adsorption sites )

    本研究小組採用電化學循環伏安電沉積法在gc基底上制備層狀納米結構金屬薄膜，以co作為分子探針，觀察到異常紅外效應（ aires ）光譜特徵，即co等探針分子發生紅外吸收增強、紅外譜峰方向倒反（反吸收）和譜峰變寬（振動能級離散程度增加） 。
  13. Abstract : under the laser irradiation, the characteristics of the metal ion in the deposition processes are described in the paper

    文摘:介紹在鍍液中，在激光光束作用下，金屬離子沉積過程的一些特點，並對其原因進行了簡單的探討。
  14. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  15. Based on the dc diffusion model, we build a duplex diffusion layer model which is composed of inner pulse diffusion layer and outer stable diffusion layer. in inner pulse diffusion layer, the concentration of ions fluctuates with frequency of pulse current ; in outer stable diffusion layer, the transport speed of ions is almost stable all the time, the main purpose is to transport the ions from the mass to the pulse diffusion layer

    在直流電沉積的擴散理論基礎上，建立了脈沖電沉積的雙擴散層模型，靠近電極為脈沖擴散層，擴散層內金屬離子的濃度隨脈沖電流的頻率而波動;脈沖擴散層外麵包圍著一層穩態擴散層，其中離子的擴散速度在整個過程中基本是穩定的，作用是將主體溶液中的離子不斷向脈沖擴散層中補充。
  16. The extremely high density of deposited energy of gev heavy ion can be reached with mev cluster beams. under this conditions new phenomena should be discovered

    利用mev量級能量的團簇束即可達到gev重原子離子在物質中的能量沉積密度，在這種條件下，載能團簇與物質作用將成為豐富新現象的源泉。
  17. The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream

    實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。
  18. The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source. the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen

    採用等離子體輔助化學氣相沉積方法，以碳氫化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作為碳源物質，用高純氫氣作為載氣，將碳源物質攜帶進入反應室。
  19. The experiment proved the adjustments is effective. according to the fact that the structure of the film causes the wavelength shift, we prepared the shift - free polarizers at 1054nrn with plasma - iad

    根據膜層的柱狀多晶結構是引起工作波長漂移的主要因素，利用等離子體輔助沉積制備出了中心波長為1054nm的無漂移偏振膜。
  20. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
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