離子注入劑量 的英文怎麼說

中文拼音 [lízizhùrùjìliáng]
離子注入劑量 英文
ion implantation dosage
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 劑 : Ⅰ名詞1 （藥劑; 制劑） a pharmaceutical or other chemical preparation 2 （某些有化學作用的物品） a...
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 離子 : [物理學] ion
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  • 劑量 : [物理學] [醫學] dosage; dose; dosis劑量槽 dosage bunker; 劑量測定（法） dosimetry; health work; ...
  1. In the experimental studies on the behaviors of helium in aluminum, ion implantation technique was adopted to introduce helium with different energies, doses and distributions into some specimen of monocrystal, polycrystal, and preferred orientation as to the structure of aluminum. the energies varied in the range of 50ev to 4. 87mev. the corresponding helium peak depths by trim simulation varied in the range of 16 angstrom to 20. 7 microns

    在金屬鋁中氦行為的實驗研究中，首先用離子注入技術在單晶、多晶以及擇優取向的鋁樣品中引入不同能量、劑量和濃度分佈的he原子，能量范圍從50ev 4 . 87mev ， trim模擬的he濃度峰值的深度范圍為16 （
  2. It uses a combination of a photosensitizing agent silicon - pathalocyanine, pc4 and strong visible light. first of all, the photosensitive pc4 is loaded into the cancer cells. when the pc4 is exposed to bright light, it increases the production of no and other oxidative species such as oh and o2 inside the cells, which leads to cell apoptosis disintegration and even cell death

    首先，將光敏感性的pc4注入病人身體內，由於pc4染劑非常容易和不健康的細胞結合，這些不健康的細胞例如癌癥細胞在結合pc4活化性染劑后且又曝露在亮光下時，細胞內一氧化氮no及其它氧化物如氫氧離子oh -或過氧離子o2 -在細胞內的產生量會增加，因而導至此不健康的細胞萎縮，甚至死亡2 。
  3. A lot of experiments have been done in the process of exploiture soft packaging li - ion battery about how to choice the rational arts and crafts. the content include : how to deal with the collector, add how much pvdf in the material, how long the material need to stirring and the right viscidity, how much condubtivity agent the electrode need, what theckness is best, choice different collectors, the degree of dryness of the electrode, theckness of pressed model, how much electrolyte will be added, placement how long after added the electrolyte, system of formation how to influnce the battery, in formation the battery need or not need preesure from outside, how to vacuumize and the optimize matching positive pole and negative pole. with these practice make sure the parameter of the positive pole should less than 90 m ; according to different vacuumize order the conduc - tivity agent in anode will be 5mass % and 9mass %, respectively, and in cathode the data is 2mass % ; every 100mah added to 0. 4 ml electrolyte ; before formation the battery should be placement 8 hours and the system of formation must be less than 0. 01c before the voltage reach to 3. 0v ; should press in outside when battery in formation ; to these batteries which capacity more than 350mah the vacuum time not excess 15s ; the optimize matching positive pole and negative pole between 2. 10 : 1 and 2. 15 : 1. finally make out the battery which cycling performance and security are all very well

    液態軟包裝鋰離子電池的研究主要是對關鍵工藝進行了優化設計，具體包括:集流體的處理、 pvdf的加入量、漿料攪拌時間和粘度、導電劑的加入量、電極膜的厚度、不同集流體的選擇、電極膜的乾燥程度、壓型的厚度、電解液的加入量、注入電解液后靜置時間的長短、化成制度的影響、化成時電池所具有的壓力影響、抽真空的處理、正負極活性物質的匹配。最後確定出液態軟包裝鋰離子電池最佳工藝參數:正極膜的厚度小於90 m ;根據化成時不同抽真空順序，確定正極膜中的導電劑的加入量分別為5mass %和9mass % ;負極膜中導電劑的加入量為2mass % ;電解液的加入量為每100mah添加0 . 4ml ;化成前電池的靜置時間應當大於8h ;電池在3 . 0v之前採用小於0 . 01c的化成制度;在化成過程中應當施加一定的外部壓力;對於350mah的電池抽真空的延時不應大於15s ;而正負極活性物質的質量比應當在2 . 1 : 1 2 . 15 : 1之間。
  4. In this research, we obtained the results as follows : firstly, the germination vigor of m0, m, and m2 seeds irradiated by the different doses of low - energy n * were compared and analyzed in our experiments. the results showed that the germination and seedling formation rates of the treated seeds and their offspring seeds were lower than that of the control and the rates decreased with the implantation dose intensification. furthermore, the germination and seedling formation rates of the seeds treated with the dose of sox 1015n7cm2 were only 7

    通過本文的研究，主要取得了如下的結果：首先，對不同劑量的低能n ~ +處理的擬南芥的m _ 0代、 m _ 1代和m _ 2代種子的萌發力進行了比較和分析，發現經不同劑量的低能離子處理的擬南芥的當代和後代的種子的發芽率和成苗率都比對照有不同程度的降低，降低關系與劑量成正相關，其中80次劑量處理的當代種子的發芽率和成苗率僅為對照的7 . 81和58 . 82 ，這表明低能離子注入可以引起種子的萌發力的下降。
  5. The 3t3 mouse fibroblasts and human endothelial cells cultured on the surface of the implanted pp showed much better attachment and proliferation than that for controlled pp. at the same time, the cooft ion implantation also exhibited low macrophage attachment with normal cellular morphology. the above results can cause positive effects on the biocompa tibility when it is used as implant material

    研究表明，離子注入后聚丙烯表面的親水性和血液相容性研究表明，通過對pp表面進行cooh ~ +離子注入處理，可以降低其表面能和水接觸角，提高其抗凝血性能和抗鈣化性能，並且pp的抗凝血性能與cooh ~ +離子的注入劑量具有很大的相關性。
  6. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  7. Thirdly, the changes of peroxidase ( pod ) activity and the analysis of the enzyme spectrum in the morphological different stage in the arabidopsis thaliana were tested. the result indicated that the relation of dose and the activit y was consistent with that of dose and the injury rates of the nutrient organs

    通過對離子注入后擬南芥過氧化物同工酶活性的測定和酶譜的分析表明，其活性的大小、酶譜譜帶的有無及深淺與劑量的關系和苗期性狀指標與劑量的關系是一致的。
  8. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  9. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  10. Mint total dna was transferred into a. thaliana mediated by ion beam with the influence of 0. 5 10 1. 5 1017 and 2. 5 1017 ions / cm2, respectively, which were on the bridge of saddle. among three transferred populations, their budding, seedling, growth and phenotypic variation took on obvious difference. combining these facts, the influence of 1. 5 1017ions / cm2 was decided as transformation influence of the following work

    我們從另外一個角度出發，在離子注入劑量-擬南芥菜存活曲線的基礎上，選擇不同的離子劑量介導薄荷全dna轉化擬南芥菜，根據各個轉化群體在遺傳和生理上的不同變化，選擇1 . 5 10 ~ （ 17 ） ions cm ~ 2作為我們以後轉化工作的轉化劑量。
  11. Lastly, the rapd method make the effects of the ion beam irradiation induced the arabidopsis thaliana dna clear. and in the molecule level explain the results of the different doses act on the arabidopsis thaliana dna and the molecule mechanisms

    利用rapd方法揭示了離子注入對擬南芥dna多態性的影響，並在分子水平上揭示了輻照的不同劑量對擬南芥遺傳多態性的影響，闡明了離子誘變的分子機制。
  12. Nowadays, separation by implantation of oxygen ( simox ) and smart - cut are two major methods to commercially supply soi wafers, but these soi wafers are much expensive than si wafers due to the long time ion implantation required for the high dosage ( 1017 - 10l8cm - 2 ) by conventional beam - line ion implanters, which, to some extent, embarrasses its widespread adoption in mainstream microelectronic products

    目前制約soi技術商業應用的重要因素之一是soi圓片過低的產量和過高的價格，主要原因是使用傳統線掃描式離子注入機需要很長時間才能達到所需的注入劑量（ 10 ~ （ 17 ） 10 ~ （ 18 ） cm ~ （ - 2 ） ） 。
  13. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  14. Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

    附加電極半徑對空心圓管端點附近離子注入劑量的影響
  15. The surface hardness variations of some kinds of polymers were compared and the influence factors such as ion species, particle energy and dose were analyzed

    通過比較幾種不同類型的聚合物材料在注入前後表面硬度的變化，分析注入離子種類、注入能量、注入劑量等工藝參數對聚合物的影響。
  16. During the study on the mutation effects of ion beam on arabidopsis seeds, it was found that the sensitivity degree of different ecotype seeds was different. plant survival rate could be affected by different ions " energy and ions " type

    在對離子注入擬南芥種子引起的誘變效應的研究過程中發現，不同生態型擬南芥種子對注入劑量的敏感度不同，離子能量、離子類型對種子成苗率也有影響。
  17. Secondly, the observation of the arabidopsis thaliana seeds which were irradiated by the ion beam through the sem found that with the increase of the ion beam dose, the ion beam mechanical erosion degree of the seeds was deep. and there are many holes and gaps in the surface of the seeds in dose

    通過掃描電鏡對離子注入后的擬南芥種子的觀察發現，經離子注入過的種子種皮有明顯的孔洞和裂痕，並且注入離子對干種子表皮的作用程度隨劑量的增大而加深。
  18. 3. to avoid the high temperature process in sige cmos technics, appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source

    3 .研究了離子注入法形成sigehcmos的雙阱及源漏工藝。確定了注入的離子類型、劑量、能量等關鍵參數。
  19. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。
  20. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
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