離子濺射 的英文怎麼說

中文拼音 [lízijiànshè]
離子濺射 英文
ion sputtering
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 離子 : [物理學] ion
  1. Ii ) energies of the sputtered atoms vary mainly from several to several teens ev, with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally, and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions, but the angular distributions are not influenced by the incident energy very greatly

    Ii ）濺射原子的能量一般集中在幾個到十幾個電子伏特的范圍內，在高能量區域也有所分佈，但數量很少;濺射原子的出射位置就在離子入射位置的附近（埃數量級） ;濺射原子的角度在垂直方向和斜射方向都有所分佈，但以垂直出射為主;濺射原子的能量、角度分佈受到了入射離子能量、角度的影響，但入射離子能量對濺射原子的出射角影響不大。
  2. Newly - developed miniaturized compound sputtering ion pump

    微型復合濺射離子泵的設計研究
  3. Product range includes diaphragm, piston, peristaltic, rotary vane, linear, and vibratory armature pumps for medical, analytical, environmental, and automotive uses

    -研發與製造旋片式真空泵往復式真空泵冷陰極濺射離子泵爪式無油真空泵等系列產品。
  4. In this paper based on the theory of the low energy electrons, the movement of the irons in the counter is analyzed. the theories of sputtering and secondary electron emission are discussed respectively. the irons " action and effect on the counter are putted forward

    本文從低能電子發射機理入手，分析了計數管內部離子運動情況，討論了離子濺射和二次電子發射，提出了離子與計數管內壁相互作用及其對計數管的影響，給出了計數管內壁表面處理模擬圖。
  5. Sputtering is the process in which material is removed from a surface as the result of a bombardment by atoms or ions with energies in excess of about 30ev.

    濺射就是用能量大於30eV左右的原子或離子，轟擊材料表面，把表面上的材料除掉的過程。
  6. Vacuum technology - acceptance specifications for getter ion pumps

    真空技術.濺射離子泵驗收規范
  7. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  8. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  9. The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause

    對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。
  10. Possible sources of measurement error were analyzed, and the technical specifications of the pump were experimentally evaluated

    實驗測試了微型濺射離子泵的各項性能指標，為進一步研製提供了依據。
  11. The testing technique and system of the newly developed, miniaturized sputtering ion pump with low pumping speed has been developed in accordance with the standards formulated by machine industry

    摘要本文介紹了小抽速微型濺射離子泵的性能測試系統和參考機械行業標準確定的測試方法，探討了測量結果誤差來源。
  12. Scanning electron microscopy : after fixed in 2. 5 % glutaraldehyde made up in 0. 1 m phosphate buffer ( ph 7. 2 ), the tissue of testis was post - fixed in 1. 0 % oso4, dehydrated in a progressive ethanol solution, dried and sputter - coated with gold, then observed with kyky - 1000b microscopy and photographed

    掃描電鏡樣品以2 . 5戊二醛（ ph7 . 2 ， 0 . 1m lpbs緩沖液配製）和1鋨酸雙固定，酒精系列脫水，乾燥，真空離子濺射儀噴金， kyky - 1000b型掃描電鏡觀察並拍照。
  13. The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much

    主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。
  14. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  15. The application of radio frequency magneto - controlled sputtering was introduced briefly. in this research, multiferroelectric magnetoelectric lcmto with excellect crystal and electric properties which keeps substitution each other between la and ca as well as mn and ti were prepared by traditional ceramic process, and the film was prepared by radiofrequency magneto - controlled sputtering

    本研究中採用傳統的陶瓷燒結方法及射頻磁控濺射技術成功制備了具有優良結晶性能和電性能的la 、 ca和mn 、 ti離子共摻的lcmto復鐵電性的磁電子材料及薄膜。
  16. Ion sputtering coator

    離子濺射鍍膜臺
  17. Property comparison of optical thin films prepared by e - beam, ion assisted deposition and ion beam sputtering

    離子輔助和離子束濺射三種工藝對光學薄膜性能的影響
  18. A control system for the thickness of ion beam sputter ( ibs ) coating is introduced in this paper. the basic principle of ibs coating machine is discussed. this paper also gives the scheme of hardware and sofeware

    本文介紹了離子束濺射鍍膜機膜厚控制的一種實用的系統，文中論述了離子束濺射鍍膜機的工作原理及鍍膜厚度控制系統的硬、軟體的實現方案。
  19. Abstract : based on the splashing mechanics microeffect ， this paper introduced the principle of ion beam removal machining it analysed the influenced factors of production efficiency ， studied the structure and working principle of the device of ion beam removal machining

    文摘:從離子束濺射的微觀力效應出發，介紹了離子束去除加工的原理，分析了影響加工效率的因素，並對加工裝置的結構及工作原理進行了探討。
  20. Plasma sputtering equipment

    等離子濺射設備
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