離子移位 的英文怎麼說

中文拼音 [líziyíwèi]
離子移位 英文
ion translocation
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 離子 : [物理學] ion
  • 移位 : bit shift
  1. The absorption characteristics was that the surface plasma absorption peak appeared around 570 nm shifted to a short wavelength and strengthened as the cu composition increased. but the maximal shift range of the absorption - edge preponderated over 500 nm, and leaded that the dipolar plasma resonance absorption peak were covered up and gradually disappeared in the absorption spectrum. we theoretically explained the mechanism of the modulating action

    實驗觀察到cu表面等離子體共振吸收峰位在570lun附近的吸收邊頻移量超過了500nln .理論分析表明，吸收峰位的移動主要源於偶極共振，而峰形的寬化主要由納米粒子的表面效應和量子尺寸效應引起
  2. Vp3 gene of hl isolate of goose parvovirus derived from recombinant piasmid pproex htb - vp3 was subcloned into ecorl site of psy538, and the reporter gene lacz with promoter pll was cloned into smai site of recombinant piasmid. both vp3 gene and lacz gene were cloned into noti site of psy681, recombinan fpv transfer vector containing vp3 gene of gpv was obtained. the result is basis of construction of recombinant fpv expressing vp3 gene of gpv and gpv genetic engineering vaccine

    本研究另從含有gpvh1分離株主要結構蛋白vp3基因的重組質粒pproexhtb - vp3中切取gpvh1株vp3基因片段，將其亞克隆于psy538的ecori位點，然後將帶有痘苗病毒啟動子p11的lacz報告基因平端克隆于上述重組子的smai位點，再用noti切下同時含有vp3基因和lacz報告基因的片段，再亞克隆于psy681的noti位點，構建出含有vp3基因的重組禽痘病毒轉移載體，為構建表達vp3基因的重組禽痘病毒從而制備gpv基因工程疫苗奠定了基礎。
  3. Segregation the separation of the two alleles of a gene into different gametes, brought about by the separation of homologous chromosomes at anaphase 1 of meiosis

    分離：同源染色體在細胞減數分裂後期中向細胞極遷移，使等位基因最終分向不同配子。
  4. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  5. The conclusions are as listed below : compared with absorption of fc16ab in chloroformon, the absorption peak of fcifrab in lb films shifted toward the shorter wavelength region, suggesting that some interaction among molecules due to the close molecular packing such as h - aggregates in the lb films. comparing uv - vis spectra of fc16ab in lb films deposited from cl - subphase with from aqueous subphase, this blue shift phenomenon of absorption demonstrated cl - made the compactness of fc16ab lb films increasing. ft - ir spectra of fc16ab in lb films at different temperature showed that there is a gradual disordering of alkyl chain from 27 ? to 200 ?, but no district phase transition appeared

    結論如下：紫外-可見光吸收光譜說明：與fc _ （ 16 ） ab氯仿溶液相比， lb膜的吸收光譜發生了藍移，這歸結于fc _ （ 16 ） ab發生了h -聚集以及抗衡離子可以使fc _ （ 16 ） ab的lb膜排列更緊密；變溫紅外光譜說明，隨著溫度升高， fc _ （ 16 ） ab的lb膜中烷基鏈的有序排布程度減弱，這表明該lb膜熱穩定性減弱，但在減弱的過程中沒有出安徽人學申請碩士學位論文摘要現相轉變。
  6. The saturation time in our simulation is consistent with the prediction of the theory. furthermore, we also studied the propagation of two pulses with inverse phase. in this case, the wakefield excited by the first pulse will be absorbed by the second pulse which shifts to higher frequency

    此外，我們還研究「位相相反」的兩個脈沖在稀薄等離子體中的傳播，第二個激光脈沖由於吸收了前一脈沖激發的靜電場，頻率向高頻方向漂移，得到頻移的大小與符合理論推測。
  7. ( 2 ) the kinetics of mesostructure formation is studied. the induction time formation of a white precipitation decrease with the concentration of [ oh " ]. the effect of salts is presented because of adding the re3 + ions into neutral solution containing surfactant. the mechanism of mesostructure formation through " hydrogen - bonding interaction, complex - bonding interaction and a local reconstruction process of the frameworks "

    （ 6 ）當稀土離子進入hms樣品骨架，靠近外來原子的對稱a o st會產生小的變形。 st o st振動帶由於配位金屬電荷遷移躍遷而變成拉曼活性模。 （ ）用ftth光譜研究了a oh凝聚反應動力學，建立了a oh凝聚反應動力學方程，求得其凝聚反應活化能為28士7kj in 。
  8. Moreover, the diffraction peak shifts toward high angle as sr content increases. it is ascribed to the substitution of la3 + by sr2 + in lscf increases the average radius of a ions and causes a charge imbalance

    且隨著sr含量的增加，衍射峰值向高角度方向稍有偏移，這是由於低價sr ~ _ （ 2 + ）取代高價la ~ （ 3 + ）增加了a位離子的平均半徑，同時引起電荷不平衡。
  9. The optimized experimental conditions are determined and the densities of some elements in the mental alloy standard samples are measured. the experimental results shows that the spectral intensity of the plasma enhances significantly with the increase of the operating voltage and the power density. ( 1 ) to the steel ally sample, the emission intensities of the spectra reach to the maximum values when the laser operating voltage is 1600v and the argon pressure is 600 torr. under the same pressure, the spectral intensity of the plasma in the argon atmosphere is stronger than that in the air. when the argon pressure is 320 to rr, the signal - noise ration is about 5 times than that which the argon pressure is 700 torr, but the temperature of plasma is less about 1000k

    （ 1 ）對于光譜標鋼準樣品，當激光器工作電壓為1600v 、氬氣壓力為600乇時，譜線強度達到最大，並且在相同壓強下，氬氣中的等離子體與空氣中的等離子體相比，其輻射強度明顯增強；氬氣壓力為320乇時的譜線信背比約為600乇條件下的5倍，而等離子體溫度卻下降了近1000k ，即等離子體溫度隨環境氣壓的增大而增大；當激光束的焦斑在樣品表面上下移動時，激光誘導量、等離子體的激發溫度、譜線強度都呈不對稱性分佈，其最大值對應的焦斑位置都位於樣品表面之下0 . 4mm左右。
  10. The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor, ionization effects of neutron on the vlsi made with cmos technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray

    對試驗結果綜合分析得出：在反應堆的綜合輻照環境下，中子電離效應較弱，並且由於中子位移效應引起載流子遷移率降低和載流子濃度降低，使得總的靜態電流下降，從而抵消中子和射線綜合電離導致的靜態電流增長。
  11. In this paper, the electromagnetic problems of the passive feedback coils that restrain the vertical displacement of plasma in fusion device is discussed and the induced currents on the passive feedback coils, the eddy currents magnetic field and the electrical parameters of coils are also analyzed

    本文研究了聚變裝置中用於抑制等離子體垂直位移的被動反饋線圈電磁問題，分析了被動反饋線圈感應電流分佈、渦流磁場及線圈電氣參數等問題。
  12. ( 3 ) the electric field breaks the energy degeneracy for symmetrical impurity position in the well, the results show that the redshift and blueshift of the impurity stark energy shift as the impurity position. ( 4 ) under the same external electric field, the impurity stark energy shift is obviously different with the different aspect ratio of the quantum well wires

    （ 3 ）當施主離子位於勢阱中不同位置時，零電場下量子阱線中的雜質態是關于施主離子位置中心對稱的簡並態，在外加電場作用下發生能級分裂，這種簡並不再存在;雜質的stark能移由於施主離子位置的不同表現為紅移或藍移。
  13. The main achievement of the paper is that the nnlse is simplified to a linear equation. it is found that we can controll a weak beam ' s phase to experience a very large phase shift within a rather short propagation distance by modulating the input power of a stronger soliton beam

    本論文的主要貢獻是：把光束的傳輸方程nnlse簡化成一線性形式的近似方程，發現可以通過調節強孤子光束的功率來控制另一弱光的相位並能使之在極短的傳輸距離內產生大的相移。
  14. The infrared results showed that the ir characteristic value l080cm - lof cubic crystal sio, and the absorption peak 460cm - l of mgf, caused by the interaction between f - - mg ' + - p elastic vibration and photon radiation, appeared in the ir spectra. ellipsometric analysis showed that the typical absorption peaks 58lnm, 589nm and 606nm, resulting from the surface plasma resonance of cu panicles and reflecting the absorption on composite film system, appeared in the extinction coefficient k curves of cu ( voll5 % ) mgf, cu ( vol20 % ) mgf, and cu ( vol30 % ) mgf, cermet films, respectively. with the component of cu increasing, the peak site presented red shift, which was in accordance to the results of ultraviolet - visible spectra

    橢偏測試分析表明： cu （ vol15 ） mgf _ 2 、 cu （ vol20 ） mgf _ 2和cu （ vol30 ） mgf _ 2樣品的消光系數k曲線中出現了反映復合金屬陶瓷體系吸收的由cu金屬顆粒表面等離子體共振引起的吸收峰，峰位分別為581nm 、 589nm和606nm ，呈現紅移，這些與紫外-可見光譜測試結果相一致；此外， cu - mgf _ 2復合納米金屬陶瓷薄膜光學常數的實驗值與考慮尺寸效應修正過的mg理論值總體上符合得很好。
  15. We also considered the physical sorting of different isotopes that sometimes takes place : heavier atoms move a bit more slowly than their lighter counterparts and can thus sometimes separate from them

    我們還考慮了有時會將各種同位素排序分離的物理過程：較重的原子移動得比較慢，有時會因此與較輕的原子分離。
  16. According to the complicated electromagnetic transient state process of the passive feedback coils, a method that can be used to calculate the equivalent time constants and the electrical parameters are given in this paper. these parameters are important to the design of the device and the power system, and also provide the evidence for the experiment of controlling the plasma unstability

    針對被動反饋線圈電磁暫態過程的復雜性，給出了求解線圈等效時間常數和電氣參數的方法，這些參數不僅對裝置的設計和電源系統的設計是重要的，而且為控制等離子體垂直位移不穩定性的實驗提供了依據。
  17. In the system, more hole deficiency was supplied by excessive la ions. this increased the concentrations of p - carries, and decreased the bound of crystal lattice field to the carries on the other hand. as a result, the dielectric peak move to lower temperature due to the carries

    發現了過量的la離子在體系中引入了較多的空位，一方面p型載流子濃度升高，另一方面使得載流子所受的品格場束縛減小，引起了由載流子導致的介電峰相對于同樣mn含量但la離子不過量的體系而言向低溫方向偏移。
  18. Abstract : the effects of the impurity particles on the structure of a 2d dusty plasma system. the mean square displacement, pair correlation function have been calculated to analyze the system ' s structure characteristics. the results show that both of the impurity particles ' content and mass or charge in the range of our caleulation will decelerate the system ' s phase transition process. here the impurity particles are smaller than the background dusty particles on mass and charge

    文摘:利用分子動力學模擬研究了雜質粒子對二維塵埃等離子體系統的影響.分別計算了平均平方位移，兩體相關函數來分析系統的機構特性.結果表明，在參數范圍內，雜質的含量以及雜質的質量和電荷的大小都會減慢系統的相變.雜質粒子在質量和電荷上都小於背景的塵埃粒子
  19. The results show that the differences between the two composites are very large. although the micrograph of the ni nano - wire and the co nano - wire are nearly the same, as the metal composition increased, the absorption band - edge of the ni / aao composite is small red - shifted ( 13 run ), however, the absorption band - edge of the co / aao composite is strongly red - shifted ( 80 nm ). meanwhile, the ni / aao and co / aao composite exhibit the optical features of the semiconductor with indirect and direct band gap respectively

    或no組份比的增加， ni / aao吸收邊的紅移量僅約13nln ，而co / aao的吸收邊紅移量卻超過了80lun ，分析發現ni / aao復合體系具有間接帶隙半導體的光學特徵，而co從ao復合結構則具有直接帶隙半導體的光學特徵; 5 .實驗研究了a創aao納米有序陣列復合結構的光吸收特性，在其光吸收譜上出現了較強的ag表面等離子體振蕩吸收峰，隨ag沉積量的減少，吸收峰位發生紅移，且逐漸展寬
  20. Based on the developing of ims narcotics detector, this article analyzes the kernel of real time operating system, introduces how to using real time multi - task operating system as object - develop environment, puts forward the analyzing and designing methodologies used in ims narcotics detector embedded software designing which is based on rtos, conceives a data - flow structure model for embedded software design, and provides an effective resolvent for middle or little real time system. it also deals with the arithmetic for peak - location ( mobile - time ) finding and temperature control, and at last summarizes the points for attention when applying rtos

    本文主要以離子遷移譜毒品偵查儀的研製為工程背景，重點是剖析實時多任務操作系統內核，介紹如何以已有的實時多任務操作系統為目標系統實現環境，提出基於rtos開發離子遷移譜毒品偵查儀所採用的分析和設計方法，構思了一種基於數據流圖結構模型的嵌入式軟體設計方法，提供一種設計中、小型實時系統的有效解決方案，並就系統實現中波峰位置（遷移時間）的查找以及溫度控制等設計了演算法，總結了應用rtos開發應注意的問題。
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