離子能量 的英文怎麼說

中文拼音 [lízinéngliáng]
離子能量 英文
ion energy
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 能 : 能名詞（姓氏） a surname
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 離子 : [物理學] ion
  • 能量 : 1 [物理學] energy; amount of energy 2 （能力） capabilities; capacity; 能量不滅 conservation of e...
  1. In the experimental studies on the behaviors of helium in aluminum, ion implantation technique was adopted to introduce helium with different energies, doses and distributions into some specimen of monocrystal, polycrystal, and preferred orientation as to the structure of aluminum. the energies varied in the range of 50ev to 4. 87mev. the corresponding helium peak depths by trim simulation varied in the range of 16 angstrom to 20. 7 microns

    在金屬鋁中氦行為的實驗研究中，首先用離子注入技術在單晶、多晶以及擇優取向的鋁樣品中引入不同能量、劑量和濃度分佈的he原子，能量范圍從50ev 4 . 87mev ， trim模擬的he濃度峰值的深度范圍為16 （
  2. Ii ) energies of the sputtered atoms vary mainly from several to several teens ev, with few atoms " energy relatively high ; the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom ) ; the sputtered atoms are emitted mainly normally, and few are slantways ; energy and angular distributions of sputtered atoms are influenced by the energies and incident directions of incident ions, but the angular distributions are not influenced by the incident energy very greatly

    Ii ）濺射原子的能量一般集中在幾個到十幾個電子伏特的范圍內，在高能量區域也有所分佈，但數量很少;濺射原子的出射位置就在離子入射位置的附近（埃數量級） ;濺射原子的角度在垂直方向和斜射方向都有所分佈，但以垂直出射為主;濺射原子的能量、角度分佈受到了入射離子能量、角度的影響，但入射離子能量對濺射原子的出射角影響不大。
  3. Ionization dominates if the particle has an energy larger compared to atomic binding energies.

    若入射粒子能量大於原子的束縛能則電離是主要的。
  4. Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained. the number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically

    考慮了各種彈性和非彈性碰撞過程，在純氧氣、純氮氣中，給出了不同簡化場e n條件下的電子漂移速度和平均電子能量的變化；著重分析了激發、電離、分解及分解電離碰撞的粒子數隨e n 、電子能量的變化，同時計算了激發發射光譜的波長。
  5. An increase in the energy of the electrons increases the probability of ionization.

    增加電子能量，會增加電離幾率。
  6. Two kinds of n - substituted pyrrole ( trimethyl - ( 2 - pyrrol - l - yl - ethyl ) - ammonium iodide and 2 - ( 2 - pyrrol - 1 - yl - ethoxy ) - ethane - sulfonate sodium ) were synt hesized ; poly ( trimethyl - ( 2 - pyrrol - l - yl - ethyl ) - ammonium iodide ) / v2os nanocomposites were synthesized by two methods ( monomer in - situ intercalate polymerization and polymer intercalation in solvent ). to fabricate vaos sol by melt quenching, oxygen top - blend technique was applied to improve oxygenic part - pressure, decrease the oxygenic anoxic and restrain the increase of v4 + ion when vos was melted. the xos xerogel prepared by the new technique had more complete structure than the vos xerogel which v20s powder was melted in the air

    針對以v _ 2o _ 5為原料、熔融淬冷法合成v _ 2o _ 5溶膠、制備v _ 2o _ 5干凝膠薄膜這一方法，提出了在v _ 2o _ 5熔融時運用氧氣頂吹工藝這一思路，目的是增加熔體表面的氧分壓，減少熔體的氧缺損，使v _ 2o _ 5干凝膠的v ~ （ 5 + ）離子含量更高、其結構更完整、性能更穩定。
  7. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  8. In order to improve the resolution power, the energy method need increase ion total energy, while, the choice of the right gas pressure, the right flight length and increase total energy are effective to improvement of resolution for gf - tof method

    增加對同量異位素的分辨能力，對e - e探測方法就要增加離子能量，而gf - tof方法除了增加離子能量外，合理的選擇飛行路徑的長度也能提高分辨能力。
  9. Scattering ion energy

    散射離子能量
  10. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  11. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  12. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  13. The energy revision of hydrogen - like ion

    對類氫離子能量的修正
  14. ( 2 ) the process of dc discharge in o2 / n2 mixtures with the different n2 concentration has been simulated. the dependences of number of collisions with the e / n and the energy of electron are given. it is analyzed stressfully that the process of electron - molecule collision with the e / n and the energy of electron in air at atmospheric pressure

    對于o _ 2 n _ 2混合氣體，模擬了不同配比條件下直流放電過程，得出了發生碰撞的粒子數隨e n 、電子能量的變化；著重分析了空氣中激發、電離、分解及分解電離碰撞的粒子數隨e n的變化，給出了電子漂移速度和平均電子能量隨e n的變化。
  15. On the basis of one - electron hartree - fock approximation, the extended - ion method and ab initio method have been used to investigate the f center migration between f ~ - layers, br ~ - layers and from f ~ - layer to br ~ - layer. we have calculated the energy barrier of these three f center migrationes and energy of f center, exciton energy. the results of f center and exciton are in good agreement with the experimential data

    本文是在單電子hartree - fock近似的基礎上採用擴展離子方法和全電子從頭計算方法，研究了bafbr ： eu ~ （ 2 + ）晶格中的f ~ -離子層間的f心遷移， br ~ -層的f心遷移和f ~ -離子與br ~ -離子層間f心遷移過程中的能量勢壘和f心基態、激發態以及激子能量，對于f心和激子的研究結果與實驗符合的很好。
  16. On the basis of catalyzing mechanism, it can raise the reaction efficiency of sodium sulfite and reduce the remains of sodium sulfite, and has evident catalyzing action by adding bivalent nickel ions and bivalent cobalt ions into the water under the condition of weak alkali

    根據催化機理，在弱堿條件下加入二價鎳離子和二價鈷離子能提高水中亞硫酸鈉的反應效率，降低水中亞硫酸鈉的殘余量，對亞硫酸鈉的除氧效果具有明顯催化作用。
  17. During the study on the mutation effects of ion beam on arabidopsis seeds, it was found that the sensitivity degree of different ecotype seeds was different. plant survival rate could be affected by different ions " energy and ions " type

    在對離子注入擬南芥種子引起的誘變效應的研究過程中發現，不同生態型擬南芥種子對注入劑量的敏感度不同，離子能量、離子類型對種子成苗率也有影響。
  18. Second, monte - carlo method is used to simulate the transports of ions penetrating through the rf sheath in terms of the above sheath dynamic model. here, both elastic collisions and charge - exchange collisions between ions and neutral particles are considered. the effects of collisions on the distributions of ions energy and angle incident on the substrate were calculated

    其次，利用已建立的碰撞等離子體鞘層模型和monte - carlo方法模擬了離子在射頻鞘層電場中的運動過程，不僅考慮了離子同中性粒子的電荷交換碰撞，還考慮了它們之間的彈性碰撞過程，研究了碰撞效應對入射到基板上的離子能量分佈和角度分佈的影響。
  19. The experimental results show that the n contents in the multilayers are higher at the lower incidence ion energy and current. the n contents increase with the increasing of the substrate temperature. the n contents in the films also arose by using the assisted ion beam

    實驗結果表明：入射離子能量較低、束流較低時，制得薄膜的n含量較高；升高溫度能增加薄膜中的n含量；輔助離子束的使用同樣增加了薄膜中的n含量；獲得的cn _ x tin _ y薄膜的最高含n量為49 . 52at 。
  20. Owing to adopting the ae - e method in identification of particles and modified fast response electronics system in data acquisition and processing unit, the spectrometer can be used to simultaneously or separately detect the fluxes and spectra of protons with energy of 1 - 200 mev, alpha particles with energy of 1 - 200 mev / u ( nucleon ), oxygen ions with energy of 1. 7 - 496 mev / u and iron ions with energy of 2. 5 mev - 1. 0 gev / u

    利用這套裝置可探測的粒子的種類和能量分別如下：質子，能量范圍為1 - 200mev ；粒子，能量范圍為1 - 200mev u ；氧離子，能量范圍為1 . 7 - 496mev u ；鐵離子，能量范圍為2 . 5mev - 1 . 0gev u 。利用粒子、質子、氧離子、鐵離子四種單能粒子對該望遠鏡系統和電子學系統進行性能測試和能量刻度。
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