離子蝕刻 的英文怎麼說
中文拼音 [lízishíkè]
離子蝕刻
英文
ion etching-
Plasma cyro - etching of high aspect ratio silicon crystal structures
等離子體低溫刻蝕單晶硅高深寬比結構Influence of process parameters on the etching rate in inductively coupled plasma etcher
等離子體刻蝕中工藝參數對刻蝕速率影響的研究Lin h, li l and zeng l., " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings ", chin. opt. lett., 3 ( 2 ), 63 ( 2005 )
林華， "介質膜光柵:光刻膠掩模占寬比和離子束刻蝕槽深的監控" ，博士論文，導師:李立峰（ 2006 ）Magnetron enhanced reactive ion etaching system
磁控管增強型反應性離子蝕刻系統When the two layers of sio2 with different refractive index are finished, the designed mask pattern is printed on the film by photolithography. after that, icp is performed for dry etching, then, the waveguide structures are obtained. at present, the rudimental graph of edg has been obtained
兩層不同折射率的sio _ 2薄膜制備好之後，經過光刻、等離子體刻蝕（ icp ）的工藝步驟之後，形成了波導結構，初步製作出了器件的圖形。Hardware and software design for the inductively coupled plasma etching machine " s system are also presented
介紹了plc控制等離子體刻蝕機的硬體系統和軟體系統的設計。The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus
深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。Theoretical and experimental research of minimum incidence angle of prism
離子束刻蝕入射角對圖形側壁陡度影響的研究In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask
在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode
而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。Narrow gap reactive ion etching system
狹窄間隙反應性離子蝕刻系統The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward
綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。Parallel plate reactive ionetching system
平行板反應性離子蝕刻系統Reactive ion etching system rie system
反應性離子蝕刻系統All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished
兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。We give some useful analyses and the computer simulations for the ion etching process. compared with the atomic force microscope ( afm ) scanning photograph of the etching surface, the theoretical results prove that these simulation analyses assure the precision required by this problem, so these mathematical models are reasonable and correct. the analysis method in this paper is useful to analyze etching process, and it can also afford some valuable reference to etching technology
在本論文我們主要利用這個數學模型，對使用離子束刻蝕製作單臺階光柵的臺階與溝槽部分的表面面形隨時間的演變過程分別進行了計算機模擬分析，並通過把理論結果與在實驗中得到的刻蝕表面在原子力顯微鏡（ afm ）下拍攝的照片進行比較，結果說明這種模擬分析能夠保證對該問題分析所要求的精度，從而也證明了理論模型的合理性和正確性。In a word, the two type of voa both have valuable applicability and potential market. the author have done numerous processing to work out new processing such as polymer coating and cure and triple - layer - metal film vaporing. other new processing, polymer ultra - violet ( uv ) cure and inductively - coupled plasma ( icp ) etching were studied
作者經過反復的工藝實驗，確定了聚合物波導塗膜和固化、三層金屬電極蒸發和腐蝕等新工藝的參數，並得到了聚合物紫外固化、等離子體刻蝕等新工藝的初步數據。The structure is shown to achieve extremely low reflectance over a wide field of view and a wide light wave band. in the second section, we analyzed the etching surface
在衍射光學元件的製作實驗部分，本論文完成的主要工作是進行刻蝕工藝的研究，對離子束刻蝕產生的面形進行了理論的分析。Finally, according to the technique of plasma etching, an evolution model describing the spatio - temporal profiles of the micro - trench is established. and that we simulated the effects of collisions and the source parameters on the etching profiles
最後，針對等離子體刻蝕工藝，建立了微結構區剖面的時空演化模型，並模擬了碰撞效應和電源參數對刻蝕剖面演化的影響。The diffraction efficiency of phase mask is discussed by using rigorous coupled - wave theory. the results are useful for fabrication of phase mask. and the diffraction efficiency of linearly chirped phase mask is discussed, it presents require of ion - beam etching
利用嚴格耦合波理論對光纖光柵相位掩模的衍射效率問題進行了深入研究，以達到指導光纖光柵相位掩模實際製作的目的，並且研究了啁啾掩模的衍射效率問題，為線性啁啾光刻膠掩模的離子束刻蝕提出了要求。分享友人