離子輔助沉積 的英文怎麼說

中文拼音 [lízifǔzhùchénjī]
離子輔助沉積 英文
deposition ionassistedd
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 輔 : Ⅰ動詞（輔助） assist; complement; help Ⅱ形容詞（輔助） subsidiary Ⅲ名詞1 （車輪外旁增縛夾轂的兩條...
  • 助 : 動詞（幫助; 協助） help; assist; aid; support
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 離子 : [物理學] ion
  • 輔助 : 1. （從旁幫助） assist 2. （非主要的） supplementary; auxiliary; subsidiary
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. The thickness of film is frequent non - uniform, and factors are a good many. in practice, the production of uniform - thickness coatings from geometric position in the vacuum chamber

    研究表明，使用等離子體源輔助沉積的光學薄膜折射率明顯提高，更加接近於塊狀材料，膜層結構比傳統沉積手段更加緻密，附著力也很高。
  2. The latter electrode is made by a 3 - electrode system with cv voltage. in the system, ta foil is acted as the working electrode, a pt foil as the assistant electrode and ag / agcl electrode as the reference electrode. stuff rucl _ 3 ? nh _ 2o is confected into electrolyte. after electrolyzing with cv voltage, ru ion can deposit on ta foil in the fashion of hydrated ru compound

    在循環伏安法中，用原料水合三氯化釕配製成的電解液，將鉭片作工作電極、鉑片作輔助電極、銀/氯化銀電極作參比電極組成三電極系統，向電解池通入循環伏安的電壓進行電解，使釕離子以水合釕化物的形式沉積在鉭基體上。
  3. The results indicate that the optical performance and coating quality have been improved drastically by using ion - assisted deposition technology in the vacuum deposition, in comparison with the traditional thermal vapor deposition

    結果表明，與傳統的熱蒸發鍍膜工藝相比，在真空沉積過程牛採用離子束輔助沉積技術，可以大大提高膜層的光學特性及膜層品質。
  4. A comparison of the optical and mechanical performance is made between with iad and without iad. the optical performances include the refractive index the extinction coefficient the packing density the vaccum - to - air shift and the afm images of the surface ; the mechanical performances include the adhesion and the hardness

    光學特性涉及折射率、消光系數、波長漂移、聚集密度和表面粗糙度，機械特性涉及硬度和附著力。通過研究，發現離子輔助沉積對單層薄膜的光學特性和機械特性均有明顯改善。
  5. By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character

    採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。
  6. The organic electroluminsecence devices : ito / tpd / alq3 / al were fabracated by reactive evaporating deposition and dc glow discharge plasma enhanced reactive evaporating ways. the effects of the organic film thickness on the electronic and optical property have been investigated

    使用真空蒸發沉積技術和直流輝光等離子體輔助反應蒸發沉積技術制備了四層結構的有機電致發光器件： ito / tpd / alq _ 3 / al ，對制得的器件進行了電學和光學性能的測試。
  7. In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )

    本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷；初步探討了金剛石薄膜生長的動力學過程；並採用輝光等離子體輔助化學氣相沉積（ cvd ）技術制備得到了n型金剛石薄膜。
  8. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  9. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  10. The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source. the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen

    採用等離子體輔助化學氣相沉積方法，以碳氫化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作為碳源物質，用高純氫氣作為載氣，將碳源物質攜帶進入反應室。
  11. The experiment proved the adjustments is effective. according to the fact that the structure of the film causes the wavelength shift, we prepared the shift - free polarizers at 1054nrn with plasma - iad

    根據膜層的柱狀多晶結構是引起工作波長漂移的主要因素，利用等離子體輔助沉積制備出了中心波長為1054nm的無漂移偏振膜。
  12. Magnetic - field - aided plasma enhanced chemical vapor deposition

    磁場輔助等離子體增強化學氣相沉積
  13. In this study, high quality p - sic film is grown on si ( 100 ) by pecvd method at the substrate temperature of 400 ? 00 ?

    在本研究工作中，採用等離子體輔助化學氣相沉積（ pecvd ）法，在單晶si （ 100 ）襯底上，在襯底溫度為400 - 700的低溫下，得到了高質量的- sic薄膜。
  14. Essentially, the process of reactive plasma spraying tin coating is combination of the plasma - assisted chemical vapor deposition ( pacvd ), and combustion synthesis of ti in nitrogen gas

    反應等離子噴塗tin塗層本質上是等離子輔助化學氣相沉積，以及ti在n _ 2氣中燃燒合成tin 。
  15. The status and prospect of the material and processing forplastic beer bottle at home and abroad are introduced. the new fruits as well as pacvd techniqne and nano - polymer to improve the barrier property are described. it will be a great foreground that the plastic beer bottle is domestically developed

    介紹了國內外製造塑料啤酒瓶的材料及其加工工藝的現狀和發展前景，提出了用pacvd （等離子輔助化學氣相沉積）技術與納米聚合物提高啤酒瓶阻隔性的新成果，指出在國內發展塑料啤酒瓶包裝的偉大前景。
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