電動力漂移 的英文怎麼說

中文拼音 [diàndònglìbiāoyí]
電動力漂移 英文
electrodynamic drift
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 力 : Ⅰ名1 （力量; 能力） power; strength; ability; capacity 2 [物理學] （改變物體運動狀態的作用） forc...
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. Cosmic ray test was carried out to choose and optimize working parameters of full - length prototype and its data acquisition system, verify the electronics system about dynamic range, drift time measurement search window, charge measurement integral width, work stability and electronics grounding and noise. in experiment, acquired abundant experience with the solution of actual problem and verified their reliability of physical design. this lays the foundations for the successful construction of the besiii drift chamber and electrical system

    測試過程中我們調整了電子學的動態范圍、漂移時間和電荷測量參數驗證了電子學系統工作的穩定性、抗干擾能力及噪聲水平等並成功解決了實驗過程中遇到了問題。通過長時間的取數進一步檢驗了全長模型和電子學系統工作穩定性，驗證了全長模型及其數據獲取系統物理設計的可靠性，為漂移室和電子學系統的成功研製奠定了基礎。
  2. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  3. As one of the several models to improve the drift - diffusion model, the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model

    漂移擴散模型自上世紀五十年代初一出現，就得到了人們的廣泛關注。但隨著微電子技術的發展，它不能很好的解釋半導體中的有些現象，流體動力學模型就應運而生了。
  4. The traditional level measuring methods can n ' t meet our demand because the subjective investigated is in such a poor systemic condition that the temperature is a little high and there ' s so many mill dust and steam there. in this article we perform systemic discuss and research against the dynamic level measuring method under special working condition on the basis of analyzing kinds of level measuring technique in and abroad. first we establish the pressure distribution mathematic model in storage bin and then deduce the mathematic relation between level height and the uniform stress on the bottom of the bin and designed a resistance compressive stress sensor used for the special condition and put forward a resoivement according to its zero excursion existing in practical use

    由於本研究系統被測對象環境溫度較高且潮濕，同時料倉中有大量粉塵及蒸汽，因此傳統的料位檢測方法不能滿足本測試要求。本文在分析國內外各種物位檢測技術的基礎上，針對特殊工況下動態物料高度的檢測進行了系統的探討與研究。首先建立了料倉中的壓力分佈數學模型，推導出料位高度與倉底均布壓力間的數學關系式，並據此設計了中溫電阻應變式壓力傳感器，同時對它在實際應用中存在的零點漂移等問題提出了改進措施，提高了傳感器性能，解決了上述特殊工況下動態物料檢測的技術難題。
  5. In order to evaluate reliability of the devices under thermal stress condition, we took some high temperature storage experiments and combination experiments of temperature and electricity. we found that the device characteristic parameters fluctuated under the thermal stress conditions

    為了考察器件的熱穩定性，我們還對器件進行了熱應力（即高溫存貯）以及熱電組合應力實驗，發現熱應力使器件特性參數發生波動與漂移，熱電組合應力進一步加速器件的退化。
  6. The disease in jaw surface will be drop the bite force ; the bite force in the patient who disease in temporal jaw joint descent obviously than normal person ; serious mistake in join deformity, the acute damage in the area arthritis can also drop the bite force evidently ; compare to normal children, wenneberg fund that the bite force lower and the duration of the biggest bite force shorter in the children who fall ill of the chronic arthritis ; the bite force also be used in appraise of the recovery condition in surgical operation 、 disorder in jaw arthritis and the serious bone offset in bite lopsided etc. some materials, it will be produce polarization phenomenon inside when suffered some force in certain direction, at the same time, it produce opposite electric charge in two of the surface ; and resume to the station of on - electrification when removed the outside force ; change the direction of the outside force, the polarity of the electric charge also be changed, this kind of phenomenon is called as “ piezoelectric effect ”

    本文設計了石英晶體壓電傳感器，以它作為傳感元件把咬合力信號轉變成電信號;利用ts5860型準靜態電荷放大器把傳感器的電荷信號轉變成電壓信號;選用usb7822數據採集卡，編寫該數據採集卡的驅動程序，採集該電壓信號並送到計算機里;編寫labview程序對該信號進行處理，得出咬合力值和咬合力曲線，並把測量結果以電子表格的形式保存，以便做進一步的分析和研究。通過對該測量儀的靜態標定、動態標定、溫度漂移標定以及實際測量試驗，證實了本測量儀具有較高的靈敏度、受動態力和溫度變化的影響比較小、能實時地顯示咬合力曲線和較準確地顯示咬合力值，滿足了咬合力測量的要求。
分享友人
分享到 Line

分享到臉書