電子型半導體 的英文怎麼說

中文拼音 [diànzixíngbàndǎotǐ]
電子型半導體 英文
electronic semicoductor
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  • 電子 : [物理學] [電學] electron
  1. Bcd detail specification for electronic component. semiconductor integrated circuit. type ch2019 4 - line to 10 - line decoder with bcd - in

    電子元器件詳細規范.半導體集成電路ch2019型4線- 10線譯碼器
  2. In lab the most often used is electron multiplier and semiconductor type

    實驗室常用的是電子倍增器和半導體型光二極體。
  3. Its main purpose is to know different kinds of detecting method. generally, euv and soft x - ray photodetector included five types : ionization gas, semiconductor, electron multiplier and film

    總的說來極紫外和軟x射線光電探測器的類型有氣體電離型、半導體型、電子倍增器以及極紫外和軟x射線膠片（干板） 。
  4. Detail specification for electronic components. semiconductor integrated circuit ct54h20 ct74h20 dual 4 - input positive - nand gate

    電子元器件詳細規范.半導體集成電路ct54h20 ct74h20型雙4輸入與非門
  5. Detail specification for electronic components. semiconductor integrated circuit. ct54ls00 ct74ls00 quadruple 2 - input positive - nand gate

    電子元器件詳細規范.半導體集成電路. ct54ls00 ct74ls00型四2輸入與非門
  6. Semiconductor optoelectronic devices detail specification for type gd101 pin photodiode

    半導體光電子器件gd101型pin光電二極體詳細規范
  7. Semiconductor optoelectronic devices detail specification for type gd3550y pin photodiode

    半導體光電子器件gd3550y型pin光電二極體詳細規范
  8. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  9. The progress in sensitizer of photosensitized photoisomerization of norbornadiene, including triplet energy transfer photosensitizer, transition metal compounds photosensitizer, electron transfer photosensitizer and semiconductor photosensitizer, is reviewed

    論述了光敏化降冰片二烯異構化反應敏化劑的研究進展，包括三重態能量傳遞光敏劑，過渡金屬化合物光敏劑，電子轉移光敏劑，半導體光敏劑等幾種類型。
  10. Detail specification for electronic component. semiconductor integrated circuit - type cd3220cp dual preamplifier with alc

    電子元器件詳細規范.半導體集成電路cd3220cp型帶alc雙前置放大器
  11. For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr

    本文對于微腔半導體激光器，提出站模型，能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性，利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論；對于電流i噪聲、自發發射壽命_ （ sp ）噪聲、自發發射因子噪聲、光子壽命_ p噪聲，以及電流調制、 _ （ sp ）調制、調制、 _ p調制，在小信號近似下，得到了相應的激光器的傳遞函數；在大信噪比的前提下，對激光器進行了頻域分析，分別計算了它們在不同參數下的信噪比增益，分析了其抗噪聲性能。
  12. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  13. Detail specification for electronic components. semiconductor integrated circuit - cf3080 type transconductance operational amplifier

    電子元器件詳細規范.半導體集成電路cf 3080型跨導運算放大器
  14. A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers

    表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。
  15. Detail specification for electronic component. semiconductor integrated circuit. type ch2021 4 - bit up down synchronous binary counter dual clock

    電子元器件詳細規范.半導體集成電路ch2021型4位二進制同步加減計數器
  16. When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.

    使一塊金屬與n型半導體接觸時，電子將從半導體流到金屬。
  17. Hic has been the important technical channel for realizing the small - scale, multi - functional, high - performance, highly reliable military electric equipment, for hic make good use of high - integration, high - speed and other characters of sic, and formed a new - generation advanced microelectronic assembly technique

    混合集成電路（ hic ）充分利用半導體集成電路（ sic ）高集成度、高速等特點，形成新一代高級的微電子組裝技術，並已成為實現軍用電子裝備小型化、多功能化、高性能化、高可靠性的重要技術途徑。
  18. Majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n - type area

    多數載流子-一種載流子，在半導體材料中起支配作用的空穴或電子，例如在n型中是電子。
  19. Xrd reveals a mixture structure of the face - centered cubic and hexagonal close - packed phases. the sn doped makes the electrical conductivity change from insulator to n - type semiconductor

    用共蒸發法制備摻錫的c60薄膜，發現摻入的sn原子的薄膜導電性由原來的絕緣體變為n型半導體。
  20. The sheet resistivity dramatically decreases to 106 ? / ?. the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too. te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films

    ，面載流子濃度增大到109 / cm2的數量級，遷移率亦增大到104cm2 / v . s ，摻雜te元素改善了cdte薄膜的電學性質，使其變為良好的p型半導體。
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