電子對隧穿 的英文怎麼說
中文拼音 [diànziduìsuìchuān]
電子對隧穿
英文
electron pair tunneling- 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
- 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
- 對 : Ⅰ動詞1 （回答） answer; reply 2 （對待; 對付） treat; cope with; counter 3 （朝; 向; 面對） be tr...
- 隧 : Ⅰ名詞1. （隧道; 地道） tunnel; underground pass2. [書面語] （道路） road3. （郊外的地方） suburbsⅡ動詞[書面語] （旋轉） turn
- 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
- 電子 : [物理學] [電學] electron
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The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3
詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導As an example, we numerically investigated the transport properties of a four - quantum - dot ring. we found that the resonant tunneling spectrum depends on the arrangement of the single - dot energy level, the interdot tunnel coupling amplitude between neighbouring dots, and the tunnel coupling between dots and leads
在數值計算部分，作為體系的一個特例，我們首先詳細的研究了由四個量子點耦合成的量子點環中的電子輸運，確定了三種結構的共振隧穿譜線對單量子點能級的不同組合情況以及相鄰量子點之間的耦合強度的依賴關系。The results indicate that carriers recombining and causing luminescence in two organic layers by traversing their interface. the influence of barrier height of transport layer on current density, recombination current and recombination efficiency of the devices is great
結果表明：雙層器件的發光是載流子隧穿內界面后在兩有機層中的復合發光，輸運層的勢壘高度對載流子電流密度、復合電流密度以及器件的復合效率影響很大。Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data
由超晶格中子能級之間的順序多阱共振隧穿引起的電場疇及電流自維持振蕩現象是其中的一個非常有意義的分支，該現象可用來製作電壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低溫下的場疇的形成和固定偏壓下電流自維持振蕩產生的條件進行了深入的探討，並結合宏觀模型和微觀模型對超晶格在時變電壓作用下的電壓-電流特性以及固定偏壓作用下的電流特性進行了模擬計算。Tuning of the driving field thus provides a simple mechanism to localize or move spin polarization within an array of quantum dots by adjusting the tunnelling rate between adjacent dots
通過對外驅動場的調控達到控制相鄰阱間隧穿的目的，可以成為電子自旋輸運或局域化的理論基礎。分享友人