電子導納 的英文怎麼說

中文拼音 [diànzidǎonà]
電子導納 英文
electron admittance
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 納 : Ⅰ動詞1 （收進來; 放進來） receive; admit 2 （接受） accept; take in 3 （享受） enjoy; take deligh...
  • 電子 : [物理學] [電學] electron
  1. As silicon is the most important semiconductor material in micro - electronic field, one - dimensional nano - structures of silicon play an important role in the fields of device assembly, nanometer - size magnetic device, photoelectronics, and have drawn wide interest in the world

    摘要作為微電子領域最重要的半導體材料，硅的一維納米結構在器件組裝、納米尺寸磁性器件、光電子等領域具有重要的作用，已經成為國際上材料科學研究的一個熱點。
  2. Duo to the intrinsic characteristics of the gaas material, serai - insulating ( si ) gaas photoconductive semiconductor switches ( pcss " s ) have more obvious advantages in the performance of both high power and ultra - fast switching than those pcss " s made of other materials and then can be widely used in ultrahigh speed electronics, field of high power microwave generation and pulse forming ( pulse sources of high power ultra - fast electromagnetism, ultra - wide - band microwave generator )

    半絕緣gaas光電導開關（ photoconductivesemiconductorswitches簡稱pcss ' s ）具有兼備寬頻帶和高功率容量特性，使其在超高速電子學和大功率脈沖產生與整形技術領域（大功率亞納秒脈沖源、超寬帶射頻發生器等）具有廣泛應用前景。
  3. In the first chapter of the dissertation, we review the development history and the trend of xerography technology, present a series of organic semiconductive materials and their device structures, and bring forward three ways to prepare single - layered photoconductor with high performance by dimixing, preparing nanomaterials, and synthesizing new organic electron transport materials

    論文第一章首先評述了電子照相技術的發展歷史和發展趨勢，同時介紹了有機光電導材料的種類和光電導體的結構，提出可通過復合、納米化和研製新型的電子傳輸材料三種手段來制備高性能有機單層光電導體。
  4. A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers

    表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。
  5. The electrical conductance of the gold / polymer composite films was tunable, and a low resistivity of the order of 10 ~ ( - 4 ) cm was yield. the conducting mechanism was not determined, perhaps the tunnel effect and the foreign - substance - electron - transfer should be considered

    聚合物金納米粒子復合薄膜的電阻率可調，電阻率最低可達10 ~ （ - 4 ） ? cm量級，導電機制可能與隧道效應及雜質離子導電有關。
  6. The transient simulation of stator winding inter - turn short circuit fault has been completed successfully based on the multi - loop mathematical model

    基於神經網路技術，提出了以定子負序導納平均值作為故障特徵量的異步電動機定子繞組匝間短路故障檢測方法。
  7. The absorption spectra indicate that the adsorption of dithiooxamide on the silver nanoparticles results in a red - shift in the spr band, mainly caused by the changes in the microenvironment of the metal nanoparticles and charge density alteration due to the charge transfer between the molecules and metal particles

    吸收光譜結果表明銀納米粒子表面吸附二硫代乙二酰胺分子可導致金屬粒子的表面等離子體共振吸收紅移，主要與金屬粒子的微環境改變以及吸附分子與金屬間電荷轉移而導致的金屬粒子內部電子密度改變有關。
  8. On one hand, after linking the fad of glucose oxidase ( god ), mwnt accelerated the electron transfer. on the other hand, met the surface of the electrode, as a nanowire, mwnt expanded electrode space. both of the situations could short the electron - transferring time and then increase the response current

    在這個過程中，一方面和酶分子的活性中心結合，可以加速酶分子到電子中間體的電子傳遞過程；另一方面和電極表面碰在一起，這根納米導線也能擴展電極空間，提高和電子中間體的接觸空間。
  9. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  10. Excited with 228nm, the emission bands centered at about 365nm and 460nm originate from the electron transitions of 1d2 - 1s0 and 3d - 1s0 in ag + respectively, and the emission band at 400nm results from the surface plasma resonance of the silver nanoparticles, which aggregated near the surface of the films

    在228nm光激發下，復合膜中ag ~ +的電子的~ 1d _ 2 ~ 1s _ 0躍遷和~ 3d ~ 1s _ 0躍遷分別在365和460nm附近發光，聚集在復合膜表面的納米銀粒子的表面等離激元共振導致了400nm附近的發光。
  11. Quantum confinement effects of semiconductor nanocrystals cdsaiseo9 in glass abstract a series of cds0. iseo. 9 semiconductor nanocrystals embedded in silicate glass with different sizes have been fabricated by one - step and two - step annealing methods. the electronic state and optical properties of these nanocrystals also have been studied through room - temperature absorption spectra and electroabsorption spectra

    本文用一步退火和兩步退火方法在玻璃基體中生長了一系列不同尺寸的cds _ （ 0 . 1 ） se _ （ 0 . 9 ）半導體納米晶體。對制備的納晶樣品作了室溫吸收光譜和電調制吸收光譜的測量，以此研究了納晶的電子結構及光學性質。
  12. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  13. Hunan long - full electronics co., ltd is one of the major enterprises in chingsha nation - class high - tec industrial development - zone. the main product " multi - colour semi - conductor high - light matrix - digital device " was awarded as " national new product " by nation science committee, and was brought into line with " torch plan "

    湖南長富電子有限公司為長沙國家高新技術產業開發區重點企業之一，其主要產品「多色半導體高亮矩陣數碼器件」已被國家科委等授予「國家級新產品」稱號，並被納入了國家「火炬計劃」 。
  14. Abstract : in this paper, the influence of the intrinsic material losses on the resonance and parameters measurement of lossy piezoelectric resonators, based on the impedance ( or admittance ) equation, is analyzed

    文摘:本文從考慮損耗時壓電振子的阻抗（或導納）方程出發，詳細分析了材料固有損耗對壓電振子的頻率特性及參數測量的影響。
  15. A / d converter ( adc ) is the key device in the interface between analog and digital system, is widely applied in the field of radar, communication, electronic countermeasure, sonar, satellite, missile, control system, earthquake, medicine, instrument, video device, audio device and so on

    A / d轉換器（ adc ）是模擬系統與數字系統介面的關鍵部件，長期以來一直被廣泛應用於雷達、通信、電子對抗、聲納、衛星、導彈、測控系統、地震、醫療、儀器儀表、圖像和音頻等領域。
  16. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低，吸收利用太陽能光譜范圍有限，催化劑回收困難等問題，通過窄禁帶半導體cds （ e = 2 . 5ev ）的復合，對納米tio _ 2進行了改性研究，一方面，由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍，另一方面，由於能帶的交疊，提高了光生電子和空穴的分離效率，從而提高了薄膜的光催化降解效率。
  17. The zno particles are excited by ultraviolet ( uv ) exciting light ( 365 nm ), showing two photoluminescence ( pl ) peaks / bands, centered at 2. 90 ev ( blue ) and 2. 23 ~ 2. 41 ev ( yellow - green ), respectively. the intensity of the yellow - green band was reduced after the product had been annealed in n2 and o2 at 350 c for 1h. ultraviolet visible absorption spectrum shows that the zno absorbs ultraviolet light intensely

    對于復合h ps zno結構的發光機制，認為是納米h價帶中的電子在紫外光的激發下，躍遷到zno的導帶，從而處于激發態，由於多孔硅的導帶比氧化鋅的導帶低， zno導帶中處于激發態的電子很快躍竄到多孔硅的導帶，然後再與h價帶中的空穴發生復合，發出可見光。
  18. The natrium space base company is situated south china zhu tree theeconomic zone - has name of and the economical, financial business, production center the beautiful flowered city guangdong provinceguangzhou, is locks as the leadership, the electronic safety depositbox, intelligent product and so on guesthouse intelligence controlsystem for necessary take the intelligence, collection development, production and sales high new technical enterprise

    納宇公司總部坐落於中國南部珠三角經濟區? ?擁有美麗花城之稱及經濟、金融商、生產中心的廣東省廣州市，是一家以智能鎖為主導，電子保險箱、賓館智能控制系統等智能產品為配套，集開發、生產及銷售的高新科技企業。
  19. In this paper, using surface photovoltage spectroscopy ( sps ) and field induced surface photovoltage spectroscopy ( fisps ) as a dominated tool, we investigated the surface and interfacial electron structure, charge transfer character of two nanostructured composite system and the effect about atmosphere ( water and oxygen ) on the semiconductor nanoparticles

    本論文利用表面光電壓譜（ sps ）和場誘導表面光電壓譜（ fisps ）為主要研究手段對兩類納米復合材料的表面和界面電子結構和電荷轉移特性以及空氣中水、氧物種等氣體分子對納米材料表面光伏性質的影響進行了探索性的研究。
  20. In attempt to prepare and study the novel electrically conductive nanocomposites, with polyethylene ( pe ) served as the matrix, maleic anhydride grafted polyethylene ( gpe ) served as eg intercalates and expanded graphite ( eg ) served as a conductive filler, prepared gpe / eg, pe / gpe / eg electrically conductive composites via solution intercalation ( si ), direct melt mixing ( dmm ) and master batch melt mixing ( mmm ) methods. by means of testing conductivity and mechanical property, with the measures of tem, sem, om, xrd and dsc, studied the relationship between preparation method, material composition, and electrically conductive as well as mechanical property. the main outcomes never reported at home and abroad literature were obtained as follows : 1 the gpe / eg electrically conductive nanocomposites were prepared via si method

    本論文以制備和研究新型高分子導電納米復合材料為目的，以聚乙烯（ pe ）為基體，馬來酸酐接枝聚乙烯（ gpe ）為插層劑，膨脹石墨（ eg ）為導電填料，採用溶液插層（ si ）法、直接熔體混合（ dmm ）法和兩者相結合的熔體母料混合（ mmm ）法制備了gpe eg 、 pe gpe eg導電復合材料，通過電導率和力學性能測試，運用tem 、 sem 、 om 、 xrd和dsc等手段，研究了制備方法、材料組成、形態結構和導電性能及力學性能之間的關系，得到以下未見國內外文獻報道的研究結果： 1採用si法成功制備了gpe eg導電納米復合材料，其導電逾滲閥值（ _ c ）為1 . 59vol ，遠低於dmm法制得gpe eg常規復合材料的_ c （ 3 . 13vol ） 。
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