電子束形成 的英文怎麼說

中文拼音 [diànzishùxíngchéng]
電子束形成 英文
electron-beam formation
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : Ⅰ動詞1 (捆; 系) bind; tie 2 (控制; 約束)control; restrain Ⅱ量詞(用於捆在一起的東西) bundle;...
  • : Ⅰ動詞1 (完成; 成功) accomplish; succeed 2 (成為; 變為) become; turn into 3 (成全) help comp...
  • 電子 : [物理學] [電學] electron
  1. To select a cylindrical plane cathode ; to design proper focus electrodes in order to control the formation of beam in methods of solving equations, electrobath and simulation aided by computer. to correct effects of anode hole and work out curves of designing guns ; to discuss plasma cathode guns at last

    選用圓平面陰極;設計恰當的聚狀以控制,並使用解析法、解槽法和數值方法三種方法進行設計;考慮陽孔效應對傳輸的影響,修正陽孔效應,給出槍設計曲線;最後討論一下等離體陰極槍。
  2. Electron-beam lithography with a novel multilevel resist structure defines the pattern.

    採用新型的多層抗蝕劑結構的光刻來
  3. Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions

    文摘:在散射能量沉積為雙高斯分佈的前提下,提出了一種提取光刻中散射參數,和的新方法.該方法使用單線條作為測試圖.為了避免測定光刻膠的顯影閾值,在實驗數據處理中使用歸一化方法.此外,用此方法提取的散射參數被功地用於相同實驗條件下的臨近效應校正
  4. Aberration of electronic lens made by electron gun and aberration of magnetic deflection system made by dy are comprehensively investigated, so is the shadow mask ' s effect on electron beam landing screen error. the conclusion can be get that, because the distribution of electron beam landing screen ( distribution of luminance ) is affected by many kinds of factors, it cannot get the correct function by calculation, and should be get by measurement instead

    全面分析了cpt槍發射系統透鏡像差與磁偏轉系統的偏轉像差;分析了蔭罩的自身厚度與位移對著屏的影響,並由此得出結論,著屏分佈(即亮度分佈)受著許多因素的影響,理論分析是半定量的,著屏分佈需要用精確的測量儀器來測量。
  5. The effect on display characteristic made by thermal deformations of the shadow mask is comprehensively investigated. by using the electron beam distribution automatic measurement system with a micro - deflective coil, a concave spot in luminance distribution can be get. it changes its position when the shadow mask changes its form

    本文系統全面地分析了傳統蔭罩的各類熱變對顯示屏特性的影響,利用本文研製的亮度分佈自動測試系統,附加一個微偏轉磁場,使相鄰兩打在同一顏色的熒光粉條,並一個亮度凹點,當蔭罩變時,凹點位置作相應的位移,以此原理跟蹤測量凹點位移量,即可得到色純漂移動態變化曲線。
  6. This new radial reflex klystron oscillator with virtual cathode is designed and simulated by 2. 5 - d pic code

    分析了在徑向反射腔中虛陰極的過程和虛陰極對的調製作用。
  7. An adaptive multi - beamforming algorithm for electronic reconnaissance

    偵察中的自適應多波演算法
  8. An electron beam, forming a scanning spot on the signal plate, zigzags its way, line by line, across the plate.

    在信號板上掃描點的,逐條地曲折掃過信號板。
  9. Beam forming cathode

    陰極電子束形成陰極
  10. The radial high current forms the virtual cathode in the reflected high frequency field, which further modulates the emitted electron beam

    徑向強流在徑向反射場中會虛陰極振蕩,單獨的虛陰極振蕩產生的微波效率低。
  11. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅( 001 )襯底與淀積的鉺、鉿原反應的超薄膜的界面與表面性質的研究,以及在該襯底上出現的共振光發射現象,包括了以下四個方面的工作: 1鉺導致的硅( 001 )襯底上的( 4 2 )再構研究利用反射高能衍射和低能衍射,在室溫淀積了0
  12. A whole scheme of a new kind of digital pattern generator of the e - beam lithography system is given, including system function, hardware and software design

    本論文介紹了掃描曝光機圖發生器的總體方案、系統設計、硬體實現和軟體編程等,提出了一套完整的圖發生器硬體方案,並完了圖發生器介面的設計。
  13. This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step

    提出採用紫外光刻工藝製作傳統波導結構之後,通過曝光和干法刻蝕製作光晶體小孔的工藝方案,大幅度減低了製作本;設計出可空氣橋結構、並且適用於曝光位置識別的光刻模板,在soi材料上功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構,在該結構上功實現了光晶體帶隙波導的曝光,帶隙波導與接續光波導位置接續良好;最後利用預留槽進行了刻蝕犧牲層的實驗,為下一步利用光晶體小孔刻蝕犧牲層空氣橋結構打下了基礎。
  14. Abstract : this paper reports the observation and analysis results on three kinds of impurity in - al2o3 by using epma - eds. we studied the differences of electric conductivity between the area containing inmpurity and the normal area by ion transport method. the effects of impurity in - al2o3 on cycle life of the na - s cell were also discussed

    文摘:用epma - eds組合儀,對氧化鋁中的三種典型雜質進行了貌觀察和分分析,並用誘導離遷移法,研究了雜質區及正常區的離導差異,討論了不同雜質的特點及對氧化鋁作用中的危害。
  15. It is proved by the intensity experiment of welding line that the welds of these two materials using explosive welding and vacuum electron beam self - material brazing are tolerable, nevertheless the welding technique could be improved basing on the study of microstructure of the joint layer

    通過強度實驗的研究,兩種工藝的焊縫強度都是可以滿足目前的應用要求的,但是,對自釬焊可根據顯微研究的結果做進一步的工藝參數的改進。
  16. The presence of microwave or ultrasonic wave, the inter - and intra - molecular complexation of cellulose molecules through hydrogen bonding is weakened, and the complexed polymer of cellulose and nylon formed in situ. the yield strength and young ' s modulus of the ramie / nylon / lldpe composites are increased from 9. 68 mpa, 260 mpa to 15. 7 mpa and 722 mpa respectively

    經微波輻照或超聲波處理后,苎麻纖維素氫鍵被削弱,與尼龍氫鍵復合物,增強了苎麻尼龍輻照lldpe復合材料體系的相容性,屈服強度、楊氏模量從9 . 68mpa 、 260mpa提高到15 . 7mpa 、 722mpa 。
  17. The microstructure observation in the microfissures suggests the liquation microcrack results from grain boundary liquation by constitutional liquation of mc carbides and formation of continuous and or semi - continuous low melting liquid films, however, the occurrence of the solid state microcracks can be attributed to the effect of ultrafast transit thermal shock introduced by high energy electron beam

    液化裂紋起源於mc碳化物的組份液化而的晶界連續或半連續的低熔點共晶液化膜,固相裂紋的則是高能流的快速瞬態熱沖擊效應的直接結果。
  18. The chemical composition, micro - structure and optical properties and its application of tio2 thin films deposited on k9 glass by using reactive electron - beam evaporation ( reb ) are studied through sem, tem, xps, xrd, spectroscopic ellipsometry ( se ) and uv - vis spectrophotometer in the dissertation, and the progresses of nucleation and growth of thin film are discussed from the point of view of dynamics and thermodynamics so that a structure model of tio _ ( 2 ) thin film is brought forward

    本文採用sem 、 tem 、 xps 、 xrd 、橢圓偏振儀( se ) 、 uv - vis分光光度計等分析手段系統地研究了反應蒸發方法在k9玻璃上制備tio _ 2薄膜的分、結構和光學性能以及tio _ 2薄膜在光學多層膜中應用,並開發了膜系設計軟體。文中還從動力學和熱力學角度分析了tio _ 2超薄膜的核生長過程,得出了tio _ 2薄膜的組織結構模型。
  19. The sharp acceleration turns the traveling electron wave into a plane wave, like a nice regular pulse of an electron beam with an extremely short wavelength ? exactly the kind of beam useful for imaging

    急遽的加速會讓行進中的波轉變為平面波,就像一道波長極短的的有規律脈沖,完全符合造影所需。
  20. The influence of guiding magnetic field on electron beam formation in foil - less diode

    導引磁場對無箔二極體電子束形成的影響
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