電子注入 的英文怎麼說

中文拼音 [diànzizhùrù]
電子注入 英文
electron injection in a semiconductor
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 電子 : [物理學] [電學] electron
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. The work on the simulation of filter, which was applied to the oled to improve the characteristic of chromatics of emission, was introduced

    有機發光器件的載流子注入、傳輸、復合過程與器件本身的材料、結構、工作電壓密切相關。
  2. Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity. the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism, the behaviors of gas - sensor for hydrogen and ethanol manifest dissimilitude. this is due to that the oxygen vacancies were compensated by the impurity

    用濺射制備的薄膜摻入部分雜質對還原性氣體進行氣敏測試，發現tio _ 2薄膜對酒精氣體和氫氣有不同的反應機制和電子注入機理，氣敏特性也表現出不同，而雜質的引入反而降低了tio _ 2薄膜的敏感性，可能是由於雜質對氧空位的補償所引起。
  3. For the first time, an integrated hall switch based on gaas mesfet process was fabricated

    論文首次採用gaas直接離子注入mesfet集成電路工藝，研製出了gaas霍爾開關集成電路。
  4. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  5. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  6. 4. the " hot " dispersion equation of the coaxial ridge - disk - loaded cylindrical waveguide twt with an annular electron beam can be firstly obtained according to self - consistent field theory

    四、引入薄環形電子注，首次建立了脊加載同軸膜片圓波導的注波互作用線性理論，得到小信號條件下的色散方程。
  7. Account for the high electrical field induced from the high applied voltage relative to small dimension device, the mechanism of hot - carrier generation is analysed, the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed

    基於mosfet偏壓不能按比例縮小所導致的高電場，對mosfet的熱載流子產生機理進行了分析，導出了熱載流子注入所引起的界面態的si - h健斷裂模型，並建立了表徵器件熱載流子效應的襯底電流模型。
  8. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  9. The detail study on the interaction between the electron beam and standing wave of complex cavity gyrotron with gradual transition and gyroklystron has been done in this dissertation, supported by the pre - study important items " the study on 8mm third harmonic gyrotron with a permanent magnet system " and " the study on 8mm high power gyroklystron ". the main works of this dissertation are listed as following : 1. the study on the rf distribution of the complex cavity with gradual transition is presented, in which the multi - modes coupling are taken into account

    本論文就是結合該課題組的「九?五」重點項目「 8mm三次諧波永磁包裝迴旋管技術的研究」及「十?五」重點項目「 8mm高功率迴旋速調管技術的研究」 ，對以諧振腔為互作用高頻系統的迴旋脈塞器件中兩種典型的器件? ?迴旋振蕩管及迴旋速調管中電子注與駐波場的互作用進行了深入細致的探討和研究，其中迴旋振蕩管採用的是漸變復合腔。
  10. The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique

    利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。
  11. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  12. The aim of the thesis was that the pure cdte thin films were adulterated by the influx technique with different metals, and then we have investigated its configuration and photoelectricity after the anneal treatment

    目前，用離子注入的方法在cdte薄膜中摻雜的文獻報道的很少。本工作目的就是採用離子束注入的方法對純cdte薄膜進行不同金屬元素的摻雜及熱處理，研究其結構和光電特性。
  13. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  14. The energy will couple in the region of diode and decrease the output power, if there is no reflector placed in front of the sws at the end of beam injection

    對于這種振蕩器如果在電子注輸入端沒有反射器，微波能量將耦合到二極體區，使輻射到空間的微波能量減少。
  15. The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide

    通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
  16. A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation

    本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。
  17. So, both 1 / f noise power spectrum measurement and similarity coefficient extracted from its time series can offer economical, effective and indestructible tool to detect the latent damage induced by esd and hci for mosfets

    因此，無論是1 / f噪聲功率譜的測試還是由其時間序列提取得到的相似系數均可以作為經濟、有效、完全非破壞性的工具，替代傳統的電特性用於檢測靜電引起的mos器件潛在損傷以及熱載流子注入損傷。
  18. Now used the magnetron injection gun ( mig ) be the electronic source of gyrotrons have been a regular method

    作為提供與電磁波產生注波互作用的電子注的磁控注入電子槍隨之也得到高度的重視。
  19. Lif acting as the electron inject layer can increase the luminous efficiency and decrease the operating voltage ; cupc acting as the hole inject layer can improve the device ' s stability, but at the same time, it will cause the reduction of brightness and efficiency

    Lif作為電子注入層，能夠明顯提高器件的發光效率，降低器件的工作電壓； cupc作為空穴注入層能夠使器件穩定性提高，但也導致了亮度和效率的下降。
  20. This paper has five chapters : the first chapter : describing the evolution of the organic / polymeric electroluminescent device, analyzing its advantages and disadvantages when acting as flat display, introducing the oled structure, luminous mechanics and the methods of increasing the luminous efficiency, etc. the second chapter : discussing the effects on the performance of oled if the lif acts as an electron inject layer and / or cupc acts as a hole inject layer

    本文共分五章：第一章：詳細敘述了有機聚合物電致發光器件的研究進展，分析了其作為平板顯示的優缺點，介紹了oled結構、發光原理和提高其效率的途徑等。第二章：討論了lif作為電子注入層， cupc作為空穴注入層對器件性能的影響。
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