電子深溫計 的英文怎麼說

中文拼音 [diànzishēnwēn]
電子深溫計 英文
electronic bathythermograph(ebt)
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : Ⅰ形容詞1 (從上到下或從外到里的距離大) deep 2 (深奧) difficult; profound 3 (深刻; 深入) thor...
  • : Ⅰ形容詞(不冷不熱) warm; lukewarm; hot; gentle; mild Ⅱ名詞1 (溫度) temperature 2 (瘟) acute ...
  • : Ⅰ動詞1 (計算) count; compute; calculate; number 2 (設想; 打算) plan; plot Ⅱ名詞1 (測量或計算...
  • 電子 : [物理學] [電學] electron
  • 溫計 : warm needle
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  2. With developing more than 20years, we have formed our special style in all kinds of thermometer, glass hydromters, double - metal themometer. theproducts are sold to germany, u. s. a., japan, south koren, england gained good quality & timely delivery

    公司已通過iso9000質量管理體系認證,產品經過了ce認證,產品遠銷德、美、日、韓、英等國,由於質量上乘、交貨及時,得各國客戶的信賴
  3. On this condition, based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique, the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated. through the optimization of simulating parameters, not only the cross - section and trap depth of the shallow electron trap induced by the dopant, but also the optimal doping amount is obtained

    在此基礎上,以微波吸收介譜檢測技術的實驗結果為依據,對摻有k _ 4fe ( cn ) _ 6的agcl立方體微晶在室下的曝光過程進行了模擬,通過調節模擬參數,不但算出由摻雜劑引入的淺陷阱的俘獲截面和陷阱度,而且得到了這種摻雜乳劑的最佳摻雜濃度。
  4. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下:首先,研究了vcsel的熱場特性,分析了流擴展,材料參數和工作條件對于度分佈的影響;其次,從壓入手,算出激光器中的等勢線分佈,並對不同度處的壓和流分佈進行比較,研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對流密度、載流濃度和度分佈的影響;再次,實現了、光、熱耦合,求出了閾值壓,算了不同偏置壓下的流密度分佈、載流濃度分佈和熱場分佈,分析了度和載流濃度變化對折射率、費米能級和光場的影響;最後,給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈,分析了n - dbr和雙氧化限制層對vcsel流密度、載流濃度、度和光場分佈的影響。
  5. Since the concept of superlattice was proposed, vertical transport in superlattice has been investigated widely. the electric field domains and current self - oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena. such kind of oscillation can be uesd to make tunable microwave oscillaors. in this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self - oscillations in doped gaas / alas superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one., the voltage - current characteristic and the current oscillation are simulated. the calculated result is nearly consistent with the experimental data

    由超晶格中能級之間的順序多阱共振隧穿引起的場疇及流自維持振蕩現象是其中的一個非常有意義的分支,該現象可用來製作壓調諧微波振蕩器。本論文對弱耦合摻雜gaaa alas超晶格中的縱向輸運特別是針對低下的場疇的形成和固定偏壓下流自維持振蕩產生的條件進行了入的探討,並結合宏觀模型和微觀模型對超晶格在時變壓作用下的壓-流特性以及固定偏壓作用下的流特性進行了模擬算。
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