電子溫度表 的英文怎麼說
中文拼音 [diànziwēndùbiǎo]
電子溫度表
英文
electrical thermometer- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 子 : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
- 溫 : Ⅰ形容詞(不冷不熱) warm; lukewarm; hot; gentle; mild Ⅱ名詞1 (溫度) temperature 2 (瘟) acute ...
- 度 : 度動詞[書面語] (推測; 估計) surmise; estimate
- 表 : Ⅰ名詞1 (外面;外表) outside; surface; external 2 (中表親戚) the relationship between the child...
- 電子 : [物理學] [電學] electron
- 溫度 : [物理學] temperature
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The method of obtaining high concentration of na2feo4 solution by quick electrolysis mainly contains four aspects : adoption of either a diaphragm or an ionic membrane electrolytic cell in which a thin anodic cell lying between the two cathodes, ( 2 ) using an iron anode that has larger specific surface area, ( 3 ) keeping suitable concentration of naoh in the anodic cell, adoption of lower current density and higher electrolyzing speed. the practical technique parameters follow a s below : the naoh solution of 14 - 16mol / l, the temperature of 303 - 308k, the surface anodic current density of 300a / m2, the unit electrolyzing speed of efficiency larger than 6. 0a / l
快速電解獲取高濃度na _ 2feo _ 4溶液的方法,主要包括四個方面:採用兩陰極室夾一厚度較小的陽極室的隔膜(或離子膜)電解槽;使用比表面積較大的鐵網陽極;保持陽極室中有適宜濃度的濃naoh溶液;採用較低的電流密度和較高的電解速度。具體工藝參數是: 14 16mol / lnaoh溶液、溫度303 308k 、表觀陽極電流密度300a m ~ 2 、有效單位電解速度6 . 0a / l 。These measurements showed that the electronic heat well below tc was dominated by an exponential dependence.
這些測量結果表明,在遠低於Tc的溫度下,電子比熱是按指數規律變化的。Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature
第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析( xrd ) 、掃描電子顯微鏡( sem ) 、 alpha - step500型臺階儀等儀器對薄膜進行表徵,分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。They include : a aluminium tank for underwater weighing, spirometers, an on - line data acquisition system for evaluating respiratory gas exchange, a heavy duty, over - sized treadmill, mechanically braked and electrically braked cycle ergometers, automated blood chemistry analysers, telemetry heart - rate monitors, core temperature monitoring system, and ibm compatible and macintosh computers
這些儀器包括水下稱重測試系統、肺活量計、即時呼吸系統分析儀、加長跑臺、功率自行車、自動血液生化分析儀、遙感心率表、體內核心溫度監測儀、 actigraph加速度計、 mrx標儀、以及相應的電子電腦設備。It shows that the injection quantity and the difference of temperature distribute as a parabola which is at the same load, and the minimum of the parabola corresponds to the optimum quantity of injection ( g ). under the condition that the quantity of injected mass, the air speed and the heat quantity is respectively g, v and q, the research demonstrates that the pentium iv chip ' s temperature variation can be controlled under 40c and work normally when the wind speed overpass 1. 5m / s and the power dissipation of the chip is 60w. otherwise this paper calculates the flooding limit of thermosiphon with several different methods
對其充灌量、散熱量、電子元件( cpu模擬晶元)表面與環境溫度之差及通風、流速的影響進行了系統的測試,發現充液量與溫差的關系在負荷不變時呈拋物線分佈,其極小值點對應的充液量是最佳充液量g 。在充液量為g時,對風速v 、散熱量q進行的研究表明,當風速超過1 . 5m / s后,奔騰晶元在60w發熱條件下晶元溫度小於40 ,能滿足長期正常工作。The results show that effects of alkali metal salts on conductivity are different because of their different anion radium, crystal lattice energy, ionic mobility and solubility in electrolytes, that different ionic conduction modes of electrolytes result to double - peak of salt concentration dependence of conductivity and different temperature dependence, and that different influences of plasticizer to conductivity result from their different action
結果表明,不同堿金屬鹽對電解質電導率的影響因其陽離子半徑、晶格能、離子淌度以及在電解質中的溶解度的不同而不同;電導率的鹽濃度依賴性因電解質的離子傳導方式不同而明顯呈現雙峰形;增塑劑對電導率的影響則因其作用方式不同而產生不同的效果;電導率的溫度依賴性也因電解質的離子傳導方式不同而呈現不同的規律。Using diethanolamine as aminating agent and glacial acetic acid as neutralizing agent, aminated epoxy acrylic cationic resin was prepared. the effect of technology of aminated epoxy acrylic resin on properties of eletrodeposition was studied by conductivity meter and electrophoresis apparatus. it was shown that, conductivity firstly decreased, and then increased with aminating temperature increase. in contrast with putting polyacrylic resin into thin acetic acid solution, the more compact film could be achieved by neutralizing polyacylic resin with glacial acetic acid and then add it into water. when neutralizing temperature was enhanced, the speed of electrodepsidon was found to increase, and the film was also more compact. increasing the dn leads to enhanced conductivity and smaller particle size. when dn equaled to 80, the smoothest film could be achieved
以二乙醇胺為胺化劑、冰醋酸為中和劑,合成了胺化環氧丙烯酸陽離子樹脂.採用電泳儀和電導率儀,研究了胺化環氧丙烯酸樹脂合成工藝對陰極電泳塗料電沉積性的影響.結果表明,隨著胺化溫度的增加,電泳液電導率先下降後上升.將冰醋酸加入樹脂中中和,後用水稀釋,比樹脂在醋酸稀溶液中中和,電沉積性能更好.電沉積速率隨著中和溫度的上升而增加,電沉積膜緻密性相應增加.中和度( dn )愈高,電泳液電導率愈大,粒徑越小,而塗膜外觀在中和度為80時達到最佳Standard specification for magnesium oxide and aluminum oxide powder and crushable insulators used in the manufacture of metal - sheathed platinum resistance thermometers, base metal thermocouples, and noble metal thermocouples
金屬外殼的鉑電阻溫度表基金屬熱電耦和貴金屬溫差熱電偶製造中使用的氧化鎂和氧化鋁粉末及壓扁絕緣子的標準規范The results show that lioh ? h2o and emd are better and cheaper materials which have no environmental pollution. it was found that the synthesis temperature were important factor. the spinel lithium manganese oxide,
結果表明: lioh ? h _ 2o和emd是制備鋰離子電池正極材料摻鈷錳酸鋰較好的合成原料,同時也是廉價、環保的合成原料; 750 , 20h為較好的合成溫度。These measurements showed that the electronic heat well below tc was dominated by an exponential dependence
這些測量結果表明,在遠低於tc的溫度下,電子比熱是按指數規律變化的。Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or
此外,本文通過反射式高能電子衍射( rheed )監測了gasb外延薄膜的生長,利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態,溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析,並與模擬結果進行比較。Numerical simulation results indicate that, for low temperature dust particles, dust particles mainly exist in the area near the column center and their charge - number can be considered as a constant, while in the area where there are no dust particles, ion and electrons are in ambipolar diffusion ; for high temperature dust particles, both the distribution regions of dust particle and high ion density are expanded and dust charge - number is increasing with the distance from the center
計算結果表明:當塵埃粒子的溫度較低時,塵埃粒子主要集中在圓柱形放電器的中心很小的區域,塵埃粒子攜帶的電荷幾乎是一個常數,受塵埃粒子空間電荷的影響,離子在該區域的密度最高。在遠離中心區域,離子和電子呈現雙及擴散特點;當塵埃粒子的溫度較高時,塵埃粒子分佈的區域和高離子密度區域擴大,塵埃粒子離放電器中心越遠,攜帶的負電荷越多。The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion
在高溫部分,材料呈現小極化子跳躍形式輸運特徵;實驗研究了不同偏置電流對薄膜的相變影響,表明電場可以引起材料中磁性的變化和晶格畸變,導致相變溫度點向低溫方向移動;材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度,得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響,結果表明離子密度為10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ,電子溫度在4 10ev之間;當頂蓋接地時,該處的等離子體密度明顯大於不接地;在同樣條件下, 50mm高反應室內的離子密度明顯大於30mm高反應室。These modular design resistance thermometers are probably the image of industrial electrical temperature measuring instruments as a whole
這款模塊化設計電阻溫度計是工業電子溫度測量儀的總體代表。Other designs of temperature and humidity recorder usually employ the combination of an electronic temperaturehumidity sensormeter and an electrical chart recorder
其他設計的溫度及濕度記錄器通常把一個電子溫度濕度感應器及一個電圖表記錄器合併使用。The influence of the height, width and the shape of the metal barrier is calculated in this paper. the simulation results show that the shape of the barrier boundary has great influence on discharge efficiency. the variation of electron temperature with gas pressure is also investigated and its result is coincident with the recorded data
對新型蔭罩式結構分析了單元結構的變化對電子平均溫度和放電效率的影響,並觀察了隨壓強的變化電子平均溫度的變化趨勢,模擬結果表明斜邊或弧狀的內斜式結構可提高放電效率,且電子溫度隨壓強的變化趨勢同文獻相符。Abstract : the influence of electron screening on electroncaptu re for the most abundant nuclei in massive stars at the presupernova stage is discussed by using the shell model. it is shown that the total rate of chance of el ectronfraction should be multiplied by a factor of about 0. 8 0. 9 with the elec tron screeningtaken into account
文摘:利用核的殼層模型,討論了電荷屏蔽對超新星的前身星階段一些較豐的核在一些重要的溫度-密度點的電子俘獲率的影響,結果表明由於電荷屏蔽的作用其電子豐度變化率須乘以一個0 . 8 0 . 9的因子According to the working condition of electronic element, a testing system established to test the temperature variety of the electronic element surface on several kinds of radiator which designed on different structure under different working condition. on the basic of the experimental results, integrated theoretical model established which include three part : heat simulation copper block, two - phase closed thermosyphon and heat sink
根據電子器件的運行工況,建立了散熱器性能測試系統,並對所設計的不同型式的熱管型電子器件散熱器進行了在不同工況下的性能實驗,比較了在熱流密度、風速、風溫等實驗工況發生改變的情況下各型式的熱管型電子器件散熱器中電子器件表面溫度的變化規律。Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage
研究了工藝參數對薄膜電阻率的影響,實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響,直流負偏壓對薄膜的電阻率並沒有明顯影響, xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。分享友人