電子漂移速度 的英文怎麼說

中文拼音 [diànzibiāoyísùdù]
電子漂移速度 英文
electron drift velocity
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 速 : Ⅰ形容詞（迅速; 快） fast; rapid; quick; speedy Ⅱ名詞1 （速度） speed; velocity 2 （姓氏） a surna...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 電子 : [物理學] [電學] electron
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  • 速度 : 1. [物理學] velocity; speed; blast; bat 2. [音樂] tempo3. （快慢的程度） speed; rate; pace; tempo
  1. Elastic collision and inelastic collision are considered in oxygen molecule, nitrogen molecule by electron impart. the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained. the number of electrons for excitation, ionization, dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically

    考慮了各種彈性和非彈性碰撞過程，在純氧氣、純氮氣中，給出了不同簡化場e n條件下的電子漂移速度和平均電子能量的變化；著重分析了激發、電離、分解及分解電離碰撞的粒子數隨e n 、電子能量的變化，同時計算了激發發射光譜的波長。
  2. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  3. Investigation of plasma drift velocity vs time in intense electron beam diode

    強流脈沖電子束二極體等離子體漂移速度的研究
  4. The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage

    結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。
  5. Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields

    Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。
  6. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  7. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  8. ( 2 ) the process of dc discharge in o2 / n2 mixtures with the different n2 concentration has been simulated. the dependences of number of collisions with the e / n and the energy of electron are given. it is analyzed stressfully that the process of electron - molecule collision with the e / n and the energy of electron in air at atmospheric pressure

    對于o _ 2 n _ 2混合氣體，模擬了不同配比條件下直流放電過程，得出了發生碰撞的粒子數隨e n 、電子能量的變化；著重分析了空氣中激發、電離、分解及分解電離碰撞的粒子數隨e n的變化，給出了電子漂移速度和平均電子能量隨e n的變化。
  9. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  10. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  11. And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail

    並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。
  12. Specific issues examined are : compensation for the variation of the stator resistance, the offset error of the dc bus voltage, the voltage error generated by the forward voltage drop the dead time of the switches, improvement of the steady state performance, and the speed sensorless control for the pmsm dtc drive system are of major concern in this thesis

    定子電阻變化，直流母線電壓漂移，開關器件反向相電壓降、逆變器死區時間引起的電壓誤差的補償，提高系統穩態運行性能以及永磁同步電機直接轉矩控制的無速度傳感器運行方案等問題都是本文研究的重點。轉矩的快速響應是直接轉矩控制演算法的一個卓越的性能。
  13. Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

    Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
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