電子衍射分析 的英文怎麼說

中文拼音 [diànziyǎnshèfēnxī]
電子衍射分析 英文
electro diffraction analysis
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 衍 : [書面語]Ⅰ動詞（開展; 發揮） spread out; develop; amplifyⅡ形容詞（多餘） redundant; superfluousⅢ名...
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 析 : Ⅰ動詞1. （分開; 散開） divide; separate 2. （分析） analyse; dissect; resolve Ⅱ名詞（姓氏） a surname
  • 電子 : [物理學] [電學] electron
  1. Abstract : abstract effect of alumina concentration, mole ratio and magnesium fluoride content on electroosmosis ni the aluminum smelting is investigated through test, and electroosmotic matter and depth analyzed by electronic probe and x - ray diffraction

    文摘:通過試驗考察了氧化鋁濃度、分子比及氟化鎂含量對鋁電解電滲的影響，並通過電子探針和x -射線衍射分析了電滲的物質，電滲的深度。
  2. Pilsenite is a rare mineral and its information is deficient. the first found pilsenite in china is in gaozhuang, henan province. pilsenite, associated with pyrrhotite, pyrite, hessite, gold, produced in pyrrhotite - polymetallic stage. three bismuth - tellurides produced in gaozhuang are well concordant with the standard pilsenite in composition, and other three are different from any of known bismuth - tellurium minerals. single crystal diffraction were made on a larger mineral grain of pilsenite. au growth and decline together with bi and te in ores and wall - rocks, which suggests that bi and te play a important role in migration and enrichment of au

    經電子探針分析，高莊金礦有多種鉍碲化物，有三粒礦物的成分與標準葉碲鉍礦完全一致。對一較大顆粒的葉碲鉍礦做了單晶x射線衍射分析。 au與bi在礦石和圍巖中的含量呈共消長關系， te與bi可能對au ag的遷移富集起了重要作用。
  3. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  4. The primary theory of absorption and desorption was also explained. the effects of primary process parameters, such as hydrogen pressure, time and temperature on the magnetic properties of ndfeb have been researched. the structure and magnetic properties have been analyzed by means of optical metallographic microscopy, scanning electronic microscopy, x - ray diffraction analysis, infrared oxygen detector and magnetic properties measurement

    本文設計了燒結ndfeb的氫爆制粉設備，對設備調試以及使用過程中出現的主要問題進行了簡要的說明，提出了一系列解決方法；闡述了吸氫、脫氫的基本原理；研究了氫氣壓力、通氫時間、氫爆溫度等基本工藝參數對磁性能的影響；利用金相顯微鏡和掃描電子顯微鏡， x射線衍射分析，紅外線測氧分析及綜合磁性測量儀等手段分析了材料的組織結構和磁性能。
  5. The main element analysis of whole rocks, the ree analysis and the trace element analysis have been done for the granitoid samples in this area. the chemical composition analysis has been done for the amphiboie and biotite minerals. the epma and x - ray powdered crystal diffraction have been done for k - feldspar, plagioclase, amphiboie, biotite, quartz, magnetite, titanite

    對本區花崗巖類樣品進行了全巖主量元素、稀土元素及微量元素分析，對角閃石和黑雲母單礦物進行了化學成分分析，對鉀長石、斜長石、角閃石、黑雲母、及石英、磁鐵礦、磷灰石和榍石進行了電子探針和x射線粉晶衍射分析。
  6. The epitaxial growths of ingaas / gaas / algaas fundamental material and the fabrication of 45 - deflector are extensively studied in our work. some measuring methods are used to evaluate the growth quality of our grown structure by pl, cv, x - ray double crystal diffraction, sem etc. property analysis are provided for it

    利用高能電子衍射、電化學c - v 、掃描電鏡（ sem ） 、 x射線雙晶衍射儀、光熒光譜儀（ pl ） 、原子力顯微鏡等多種方法對制備的器件進行了檢測，同時對實驗結果進行了必要的分析。
  7. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  8. The morphology, composition and crystalline of the composite particles were characterized by scanning electron microscopy ( sem ), x - ray diffraction ( xrd ) and thermo - gravimetric analysis ( tga ) techniques

    利用掃描電子顯微鏡（ sem ） 、 x -射線衍射分析（ xrd ）和熱重分析（ tga ）對復合微球的形貌、無機沉積物cds的晶型和有機-無機成分相對含量等進行了表徵。
  9. The melted tungsten carbide would react with the steel matrix on the interface and the reaction zone was observed as a result. the reacting production was examined as fe3w3c by means of x - ray diffraction and scanning electron microscopy analysis. the reaction between tungsten particle and steel matrix could improve the interfacial bonding strength remarkably

    Wc鋼復合材料的制備過程中， wc顆粒在高溫下發生了局部溶解並在wc顆粒和鋼基體界面處發生了界面反應； x射線衍射和電子衍射花樣分析表明，反應產物為高穩定性的fe _ 3w _ 3c ，界面反應有效地改善了wc顆粒與鋼基體的界面結合。
  10. Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed

    本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。
  11. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  12. The phases structure of the kapton film and protective film were determined by x - ray diffraction ( xrd ) and x - ray photoelectron spectroscopy ( xps )

    用x射線衍射分析（ xrd ） 、光電子能譜（ xps ）對基體薄膜及鍍膜的物相成分、化學結構進行表徵。
  13. The morphologies of powder were observed by using high - resolution transmission electron microscopy ( hrtem ) ; x - ray diffraction ( xrd ) pattern was used to analyze the phases of the powder ; energy dispersive x - ray spectroscopy ( edx ) was used to analyze the component of composite powder

    用高分辨電鏡觀察復合粉體的形貌，進行電子衍射分析；用d / 3ax3b型x射線衍射儀作復合粉體的物相分析；用pv9900型能譜儀作復合粉末的成分分析。
  14. General guide for electron backscatter diffraction analysis

    電子背散射衍射分析方法通則
  15. Ebsd analysis of local elastic strain fields in semiconductor structures

    半導體結構中局域彈性應變場的電子背散射衍射分析
  16. By means of esca, igc, wd, dsc ) sem and computer aided image processing technique, the relations of composite ' s microsimcture and macroscopic properties were researched and conclusions were listed as follows. l

    藉助x射線光電子能譜（ esca ） 、反相氣相色譜（ igc ） 、 x射線衍射分析、 dsc分析和掃描電鏡（ sem ）等測試手段和計算機圖像處理技術，分析了材料微觀結構與宏觀性能間的關系，取得了如下結果。
  17. Method of selected area electron diffraction for transmission electron microscopes

    透射電子顯微鏡選區電子衍射分析方法
  18. Saed ( selected area electron diffraction ), hrem ( high resolution electron microscopy ) and eds ( energy dispersive spectrum ) experiments confirmed that both the porous layer and lamellar layer are composed of nano - crystalline ha ( hydroxyapatite )

    實驗中採用了選區電子衍射、高分辨觀察和x - ray能譜等實驗手段，分析了羥基磷灰石各層的形態、成分與微結構。
  19. More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3

    利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。
  20. The thesis mainly investigated the bati _ 4o _ 9 ( bt _ 4 ), which has the lowest dielectric loss in ba - ti system, and ( ba, sr ) tio _ 3, the a position substitute compound of batio _ 3. the dielectric properties of bt _ 4 / bst with different preparation way and different elements doping were investigated. a archimedes method, xrd, sem, impedance analyzer, network analyzer and hakki - coleman method were used to investigate the density, phase formation, microstructure, dielectric properties and doping mechanisms

    本論文以在ba - ti系中具有最低介電損耗的bati _ 4o _ 9 （ bt _ 4 ）高頻介質陶瓷和batio _ 3a位sr取代而得的（ ba ， sr ） tio _ 3 （ bst ）高頻介質陶瓷作為研究對象，對不同粉體制備方法制備的bt _ 4 / bst高頻電介質材料進行不同元素的摻雜，運用阿基米德方法， x射線衍射分析儀，掃描電子顯微鏡和阻抗分析儀，網路分析儀， hakki - coleman法等方法手段和測試儀器測試燒成樣品的密度，相組成情況，微觀結構和介電性能，探討造成介電性能起伏的形成機理。
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