電子輻照 的英文怎麼說

中文拼音 [diànzifúzhào]
電子輻照 英文
electron irradiation
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 輻 : 名詞（車輪中車轂和輪圈的連接物） spoke
  • 照 : Ⅰ動詞1 （照射） illuminate; light up; shine 2 （反映） reflect; mirror 3 （拍攝） take a picture ...
  • 電子 : [物理學] [電學] electron
  1. Study on positron annihilation spectra of baf2 crystals by proton radiation

    氟化鋇晶體質子輻照的正電子湮沒壽命譜研究
  2. The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region. the relationship of the ideality factor to the applied voltage is theoretically studied

    提出了中子輻照下sicpn結電特性退化的新的理論， pn結耗盡區中的輻照陷階在耗盡區電場的作用下熱發射效應得到加強，從而導致pn結正偏和反偏時的復合電流和產生電流的改變。
  3. Glossary of electrotechnical, power, telecommunication, electronics, lighting and colour terms - terms particular to electromedical equipment - radiology and radiological physics terminology

    電工電力電信電子學照明和顏色術語.第5部分:醫療電氣設備專用術語.第01集:輻射學和輻射物理學術語
  4. The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically. the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps

    在輻照的位移效應方面：從理論上對電子輻照在4h - sic中引入的缺陷數量和各種缺陷能級進行了計算和分析，其中只有eh6 / eh7缺陷能級在sic中起著有效的復合中心的作用。
  5. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  6. When the charge deposited in the sv exceed critical charge qc, seu occurs. in order to decrease intensity of beams, heavy ions generated by tandem accelerator, bombards an au foil

    我們用hi - 13串列加速器提供的重離子輻照航天微電子器件，為了降低離子束的強度，用重離子從au靶上的二次散射離子作為輻照源。
  7. Study on the illumination and irradiation of cdte cds solar cells

    太陽電池光照和電子輻照研究
  8. Design study on an electron linac for irradiation processing with a high capture efficiency

    高俘獲效率電子輻照加速器的設計研究
  9. A model of the minority carrier lifetime damage constant is presented. the model is proved to be reasonable by good match with experimental data

    結合具體的試驗條件，證明了所得出的電子輻照4h - sic少子壽命損傷系數的模型是合理的。
  10. Electronic irradiation, is widely use in manufacture of semiconductor products. in order to reduce reverse recovery time, we determined to adopt it

    電子輻照技術，廣泛應用於半導體器件的製造中，本課題用來進一步降低反向恢復時間。
  11. The local pt diffusion is formed by the pt gettering by the hole defection deduced by hydrogen irradiation. the irradiation energy and dose definite the axial position and dose of the local pt diffusion respectively

    本課題研究提出了新型的局域鉑摻雜技術和電子輻照技術相結合的壽命控制技術，以期改善frd的綜合性能。
  12. After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened

    為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。
  13. It was first discovered that open - circuit voltage decay in multicrystalline silicon solar cells is smaller than that of in monocrystalline silicon solar cells through electron irradiation, which is explained from electron irradiation mechanism and the structure of multicrystalline silicon solar cells and also has not been reported

    通過對晶體硅太陽電池電子輻照，首次發現多晶硅太陽電池的開路電壓衰減小於單晶硅太陽電池，從輻照機理和多晶硅太陽電池的結構解釋了該現象。本研究未見報道。
  14. Radiation effects have been investigated up to - 30 dpa by the heavy ion irradiation simulation and positron annihilation lifetime techniques in the home - made modified 316l stainless steel and the commercially available stainless steel and tungsten, which are used as the beam window materials for the spallation neutron source in accelerator driven radioactive clean nuclear power system ( ads ). their radiation resistance properties are compared

    本工作採用重離子輻照模擬和正電子湮沒壽命測量技術研究了加速器驅動潔凈能源系統（ ads ）散裂中子源束窗材料鎢、普通不銹鋼和國產改進型316l奧氏體不銹鋼在0 30dpa輻照劑量范圍的輻照效應，並對它們的抗輻照性能作了比較。
  15. In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease

    對sicjfet的電參數如電子濃度，遷移率，電阻率和空間電荷區密度在中子輻照下的變化進行了分析，提出了中子輻照下6h - sicjfet的器件模型，利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。
  16. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  17. Thermoluminescence and thermally stimulated current of methyl silicone rubber induced by proton radiation

    質子輻照甲基硅橡膠的熱釋光和熱釋電研究
  18. ( 3 ) through the study of electrical property of irradiated rutile by high - dose neutron, the curse of relationship of conductivity and temperature has been abtained. according to this relationship, the conducting behavior in diflrent temperature is also studied

    本論文工作還對高注t中子輻照后金紅石晶體的電學特性進行了研究，得到了它在空氣和真空中的電阻與溫度的關系，分析了各個溫區的導電機制。
  19. In czochralski silicon crystals ( czsi ) through fast neutron irradiation, formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ), positron annihilation technology ( pat ) and scanning electron microscope ( sem ). the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron, positron annihilation average lifetime of samples increased with increasing of irradiation dosage. positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n. cm - 2 tended to constant

    本文對直拉硅樣品進行了不同劑量的快中子輻照，在硅中引入大量的亞穩態缺陷，研究這些亞穩態缺陷的形成，並在較寬的溫度范圍內對輻照樣品進行了退火處理，研究退火后亞穩態缺陷的轉化及同硅中氧的相互作用，應用傅立葉變換紅外光譜技術（ ftir ） 、正電子湮沒技術（ pat ）和掃描電鏡（ sem ）進行了測試。
  20. The area irradiated by the electromagnetic field can give scattering effect and the transmission curve with emit - ting energy of electron shows an abnormal step ; 2

    電磁輻照的區域類似於一個散射勢，透射率隨電子入射能量的變化曲線產生一個反常的臺階結構； 2
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