電容漏電 的英文怎麼說

中文拼音 [diànrónglóudiàn]
電容漏電 英文
capacitor leakage
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 電容 : electric capacity; capacitance; capacity
  • 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
  1. Leakage current measurement is able to detect polarity of capacitor

    漏電流量測方式可輔助檢測電容極性達
  2. To lower the characteristic capacitance and leakage currents of reed relays ( and, less commonly, electromechanical relays ), an electrostatic shield is sometimes added between the switches and the coil

    為降低干簧繼電器（以及並不那麼常見的機電式繼電器）的特徵電容和漏泄電流，有時會在開關和線圈之間增加一層靜電屏蔽。
  3. A common data acquisition card can be used on laboratory virtual instrument engineering workbench through designing the external interface between labview and common date acquisition card on the software design ; used the idea of the double buffer and direct memory access, a real time data acquisition and logging about the succession, big capacitance leakage current is realized ; a digital filter is designed to filter high frequency signals

    在軟體設計上，設計了與普通數據採集卡的介面，實現了在labview環境中應用普通數據採集卡的功能；運用雙緩沖和內存直接映射的設計方法實現對連續、大容量泄漏電流信號的實時採集和存儲；設計了數字濾波器對採集后的原始數據濾去高頻干擾。
  4. Phase - shifted zero - voltage - switching pwm full bridge converter can realize zvs for the power switches with the use of the leakage inductance of the transformer and the intrinsic capacitors of the power switches, so it is used widely for medium and high power applications

    移相控制零電壓開關pwm全橋變換器利用變壓器的漏感和開關管的結電容可以實現開關管的零電壓開關，在中大功率的場合應用廣泛。
  5. It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna

    本文證明了在cmos源端degeneration結構的低噪聲放大器中，忽略場效應管的柵漏電容將造成對放大管的最優柵寬估計過大。
  6. It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance

    在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。
  7. The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature

    本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗
  8. The auxiliary switch conducts when the two main switch turn off, and it also operates at zcs conditions. this switch not only helps the main switches achieve zvs, furthermore, it eliminates the oscillation between the transformer leakage inductance and the junction capacitance of two switches

    輔助開關管為主開關管實現zvs創造了條件，同時輔助開關管在主開關管關閉期間實現zcs導通，大大減輕了變壓器漏感和主開關管結電容之間的振蕩。
  9. A lcc multi - resonant ( mr ) network is added to the traditional three - level converters to realize zvs. the unique arrangement of a multi - resonant network results in absorption of all major parasitic components hi the resonant circuit, such as transistor output capacitance, diode junction capacitance and transformer leakage inductance, which can eliminate parasitic oscillation in the converter

    它的優點在於諧振電容吸收了開關管和續流二極體的結電容，諧振電感吸收了變壓器的漏感，使得開關管和續流二極體都能在軟開關的條件下完成導通和關斷過程，消除了電路中的寄生振蕩。
  10. Once data has been written in dram, charges stored in each capacitor must maintain more than the refresh time so that the information stored in each dram cell can be read out correctly

    數據一旦被寫進dram ，每個小電容上電荷的存儲時間就必須大於dram的刷新脈沖時間，如果由於漏電流致使存儲的電荷丟失，就會導致數據讀取的誤操作。
  11. Manufactures and supplies components for precise and reliable measurement of pressure, level and vacuum on processes involving corrosive, viscous, clogging fluids

    -主要有lcr數字電橋系列電容測量儀，電感測量分選系列漏電流測試儀系列耐壓測試儀。
  12. Transformers can reduce the bulk of the auxiliary power considerably by magnetics integration, for the primary axial fission winding can help integrate two transformers, and series connection with balancing reactor at the primary and with low - pass filter at the secondary can help integrate several magnetics

    變壓器的一次繞組軸向分裂，可實現兩臺變壓器集成;變壓器的漏抗必然存在，且在一次側與平衡電抗器串聯，在二次側與濾波電容串聯，可以實現幾種磁性器件的集成。因此，變壓器採取磁集成技術將大大降低輔助電源的體積。
  13. The analysis of ppf ’ s operation principle is introduced in detail in this paper. further more, the effect on the circuit operation is also analysed, which caused by clamping capacitance and different transformer leakage inductance value

    本文首先深入研究了推挽正激變換器的工作原理，分析了穩態條件下的工作模態，同時分析了箝位電容與變壓器原邊漏感的大小對于工作模態的影響。
  14. By compared with the simulation results and the experiment results, we come to the conclusions that : ( 1 ) circuit with assistant network can widen soft - switching extent in lagging arm, reduces duty - cycle loss on the secondary, diminishes switching dissipation of inverter spot - welding power source. ( 2 ) the range of resonant capacitor, the important factor to soft - switching process, not only affects zero - voltage turn - off of power switches, but also affects the range of zero - voltage turn - on of power switches. so resonant capacitors must be considered according to many aspects ; ( 3 ) it easily fulfils soft - switching condition in lagging arm as leakage inductance of power transformer increases, but bigger leakage inductance of power transformer increases opening dissipation of transformer and decreases efficiency of soft - switching inverter power source

    通過模擬結果與軟開關點焊逆變器試驗結果的對比分析，得到了如下主要結論：採用輔助網路可以完全拓寬全橋軟開關逆變器的滯后橋臂軟開關范圍，減小了次級占空比丟失，降低了逆變電阻點焊電源的開關損耗；諧振電容是影響軟開關工作狀態的重要因素，其大小不僅影響開關管的零電壓關斷，同時也影響開關管的零電壓開通范圍，因此，諧振電容應該綜合考慮；功率變壓器漏感越大，越容易滿足滯后橋臂的軟開關條件，但是大的漏感也使變壓器的通態損耗增加，降低了軟開關逆變器的效率。
  15. Then a thorough analysis to the bias - magnetic of ppfc is made. the retraining effects of the main parameters ( include clamping capacitance c, output filter inductor lf, load r, the leakage inductor ls and source winding resistance r ) are studied under the conditions of different von, different ton and different winding parameters. then a conclusion can be drew, that the smaller lf and the bigger r are, the better the bias - magnetic is restrained and c has a best value to retrain the bias - magnetic

    分別對管壓降不同，導通時間不同以及兩原邊繞組參數不一致（包括漏感、電阻、激磁電感三種情況）的情況下，主要參數（包括箝位電容c 、輸出濾波電感lf 、負載r 、原邊繞組漏感ls 、原邊繞組電阻r ）對偏磁的抑制作用進行了模擬分析研究，得出lf越小， r越大時激磁磁勢偏移量ni越小， c在其他參數確定時對抑制偏磁有最優值等結論，為參數的優化設計提供了依據。
  16. Most other types of capacitor have leakage resistances in excess of hundreds of gigohms so that for most applications their leakage currents can be disregarded

    其他種類的電容漏電流很小，漏電電阻均超過數百吉歐，對于絕大多數用途而言，其漏電流可以忽略不計。
  17. Capacitive leakage current

    電容漏泄電流
  18. ( 2 ) each state of the total switching period has been studied in detail, in which the voltage of block capacitor and current of leakage inductance of main transformer and keeping time of each state have been discussed, then the condition of zero voltage switching is attained, which gives theory guidance for setting reasonable dead time, finally, the possibility of zero voltage switching is proved by simulation of saber software

    （ 2 ）對不對稱半橋在一個完整的開關周期內各個狀態分析，描述了隔直電容電壓和變壓器漏感電流的變化規律，各個狀態的持，然後得出實現zvs的條件，從而為設置合理的死區時間提供了理論指導，最後用saber軟體進行了模擬，驗證了零電壓開關實現的可能性。
  19. In the second part, we introduce the advantages of soi devices together with their corresponding mechanisms : free of latch - up effect, low parasitic capacitance, easy to form shallow junctions and so on

    論文的第二部分介紹了soi器件的優點:無latch - up效應，較低的源漏寄生電容以很容易形成淺結等，並對具體的機理作出了相應的解釋。
  20. Soi, namely silicon on insulator, device and ic have many advantages : low leak current, weak parasitic capacitance, low power loss, radiation hardness, and high integreted level

    Soi （ silicononinsulator ）器件及集成電路具有泄漏電流小、寄生電容小、功耗小、集成度高、抗輻射能力強等優點。
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