電極探測器 的英文怎麼說

中文拼音 [diànjítàncèqì]
電極探測器 英文
electrode probe
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 探 : Ⅰ動詞1 （試圖發現） try to find out; explore; sound 2 （看望） call on; visit; see 3 （向前伸出）...
  • 測 : 動詞1. （測量） survey; fathom; measure 2. （測度; 推測） conjecture; infer
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 電極 : electrode; pole
  • 探測器 : finder; detector; seeker; sounder; probe
  • 探測 : survey; search; sound; probe; sounding; detection; acquisition; reconnaissance; localization; fin...
  1. Its main purpose is to know different kinds of detecting method. generally, euv and soft x - ray photodetector included five types : ionization gas, semiconductor, electron multiplier and film

    總的說來極紫外和軟x射線光電探測器的類型有氣體電離型、半導體型、電子倍增器以及極紫外和軟x射線膠片（干板） 。
  2. The electron multiplier detector is appropriate to do ordinary detect works for its high sensitive and semiconductor photodiode ( such as silicon diode ) is appropriate to act as transfer standard detect for its high stability

    倍增器的靈敏度非常高，適合日常的測量工作；半導體型光電二極體（如si二極體）的穩定性好，適合作傳遞標準探測器。
  3. In this paper, we have studied the feasibility for the bpm of to be button electrode was used in the lia and the simulating has done for the use by pspice / orcad

    本文研究了鈕扣電極束位置探測器應用於強流直線感應加速器（ lia ）的可行性，並用pspice orcad電路模擬模擬軟體進行了模擬計算。
  4. The button electrode bpm experiments and calibrations have been done on the experimental facilities. the results of the experiment show that the button electrode has an accuracy of 0. 5mm with a resolution of 0. 13mm

    在模擬束流平臺上對鈕扣電極進行束位置測量的實驗標定，並根據實驗結果對鈕扣電極束位置探測器裝置進行改進和優化。
  5. The button electrode is one that widely used in high energy rf accelerators, such as storage ring, and the bpm made of button electrodes has many merits like high accuracy, high resolution, resisting magnetic field, simple machinery, without magnetic core and low cost, etc. so we want to use the button electrode as the bpm in high current accelerators like the lia

    鈕扣電極束位置探測器是一種廣泛應用於射頻加速器儲存環等高能弱流加速器的一種束位置測量裝置，它具有測量精度高、解析度高、不受磁場干擾、機械結構簡單、無磁芯、造價低廉等特點。只是，至今未見有關這種束位置探測器在強流加速器（如，直線感應加速器）上應用的報導，如能將鈕扣電極束位置探測器應用於lia ，將是一件很有意義的事情。
  6. This article studies on a novel method about detector calibration and monochromator calibration by using silicon pin photodiode. the detector and the monochromator of one spectrum measurement system had been calibrated using the method, and the spectrum distribution of one laser - produced plasmas ( lpp ) source with jet gas target was measured. the use of a specific combination of the silicon photodiode and multiplayer reflect films is the notable character in monochromator calibration

    本文研究了一種利用光電二極體傳遞標準探測器標定普通探測器和單色儀系統的方法，實際標定了所用的探測器和單色儀系統，測得了噴氣靶激光等離子體光源的相對光譜分佈，設計出絕對光譜分佈的測量方法，並且利用labview的g語言及相應的數據採集卡等硬體設備構造出一套智能化、高效率的測量系統，完成了多層膜反射率測量工作。
  7. In this thesis we have analyzed some kinds of single photon detector and their advantage and disadvantage firstly. then, the key apparatus ( ingaas - apd ) and its characteristics have been studied. we have tested the apds of perkinelmer, oki and photon company, and got some useful parameters

    其次，主要對量子通信用單光子探測器的核心器件? ? ingaas雪崩光電二極體（ ingaas - apd ）的暗電流特性、光電流、溫度特性、雪崩特性等進行了研究，同時把飛通公司、 oki公司、 perkinelmer公司的apd進行了比較，分別得出了它們的特性參數，為研製實用的紅外單光子探測器提供了重要的依據。
  8. In euv and soft x - ray band, the most often used detector is ion chamber with rare gas, from whose collective electrode we can directly calculate intensity of photon flux

    在極紫外和軟x射線波段常用的探測器是稀有氣體電離室，可以通過電離室收集極的收集電流直接計算出光子流強度。
  9. Optical gains as large as one million are used to achieve the high sensitivities required in current electro - optical sensors. these large optical gains make the detector the most susceptible sensor element to laser damage. people concerns that the influence to the quality of ccd camera image under laser irradiation, the laser - induced threshold of ccd detector and the evaluation of laser - induced effects

    光電探測器具有極強的目標探測能力，而激光具有極高的亮度；因而各類光電裝備的光電探測器成為國外發達國家正在大力發展激光武器系統的首要攻擊目標，激光對探測器的干擾與損傷程度如何、受干擾后能否繼續正常工作、何時達到損傷閾值以及如何對干擾效果做出客觀評價是人們非常關心的問題。
  10. Leakage current is one of key factors for the energy resolution of the detectors, the mis detector has lower leakage current thus improve the energy resolution. the mis structure is a good contact type for the cdse detectors

    可見漏電流是影響探測器能量解析度的重要因素，具有mis接觸電極的探測器能有效地減小漏電流，提高能量解析度，因而是cdse探測器的一種較佳電極接觸方式。
  11. For the purposes to make cd1 - xznxte detector, ohmic contact materials of cd1 - xznxte crystal are selected and structure of electrode is designed. the processing of conducting film prepared by the magnetron sputtering is studied

    本研究主要開展了在cdznte晶體上歐姆接觸電極的設計選材和磁控濺射方法制備導電薄膜的工藝研究，為cdznte探測器的制備奠定工藝技術基礎。
  12. One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface, and the main technology usually used is evaporation, but the cohesion of evaporated film is n ' t very firm

    制備cdznte探測器最關鍵的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ （ 1 - x ） zn _ xte晶體表面制備接觸電極用導電薄膜，大都是採用蒸發鍍膜技術，膜層與cdznte晶體結合不很牢固。
  13. Due to its characteristic of plug & play ( pnp ), the bulk data transfer module has great advantage and potential to be applied to data transferring between mobile devices, such as notebooks, which do n ' t allow users to plug their own pci devices directly in

    Usb數據傳輸介面的使用極大增強了x射線探測器標定分析系統的可移動性，使之不僅能夠方便地應用到個人微機、筆記本電腦等不同的計算機終端上，而且可以使標定分析系統方便靈活地轉移到不同的標定環境。
  14. However, they can be easily damaged by high power laser, the research on the response character of the detectors to laser irradiation plays a very important role

    但是，光電探測器極易受到強激光的干擾和損傷，研究激光對光電探測器的輻照而帶來的各種效應具有重要的實際意義。
  15. Zno is a ii - vi semiconductor material with wide band - gap, which has hexagonal wurtzite structure. zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties

    氧化鋅（ zno ）是一種具有六方纖鋅礦晶體結構的寬禁帶ii - vi族半導體材料，由於其優良的特性，在太陽能電池、紫外探測器、聲表面波器件、氣敏傳感器、透明電極等方面得到了廣泛的應用。
  16. Traditionally, zno is used as surface acoustic wave devices ( saw ), bulk acoustic devices ( baw ), gas sensors, varistors, transparent electrodes, uv - detectors, and etc. in recent years, zno has gained more and more attention as a wide band semiconductor

    傳統上， zno薄膜被廣泛應用於聲表面波器件、體聲波器件、氣敏傳感器、壓敏電阻、透明電極、紫外探測器等領域。近年來， zno作為寬禁帶半導體光電材料的研究越來越受到人們的重視。
  17. The simulated results show that we can improve the sensitivity by setting the optical bias at / 2, reducing the gap of electrode, increasing the overlap integral factor, reducing the insert lose, adopting suitable segmentation number, increasing the electrode length, increasing the optical power, reducing the wavelength and the relative intensity noise and reducing the receive bandwidth ; obtain the wider bandwidth utilizing reducing the electrode length and the capacitance of modulator, segmentation the electrode ; increase the dynamic range using lowering noise, increasing the optical power at the detector and lower optical bias

    通過計算得知，使傳感器相位偏置為/ 2 ，減小電極間距，提高電光重疊因子，減小器件插入損耗，採用合適的分段數，增加電極長度，增大光功率，降低激光的波長，減小相對強度噪聲，減小接收帶寬，對提高靈敏度的效果是非常明顯的。而減小天線長度，降低調制器電容，電極分段，都可以獲取較大的帶寬。降低系統噪聲;增加到達探測器的光功率，採用較低的光學偏置，都可以增大線性動態范圍。
  18. Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available

    和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。
  19. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  20. By the analysis of the mechanism of charge carries transporting in the detector and the polarization effect of msm detector, we get : the polarization effect of cdse detectors is mainly caused by the poor transporting of charge carries ; to avoid the polarzation effect and improve the charge carries transporting property, the detector must has a suitable anode, so as to make a more suitable electrical field

    此外，本文還通過分析探測器中的電荷輸運機理，對具有msm結構的探測器的極化現象進行了定性的分析，指出光生載流子輸運受阻是引起極化現象的原因之一，只有改變探測器的正極接觸，從而改變探測器內的電場分佈，改善載流子的輸運特性，才能消除極化現象。
分享友人
分享到 Line

分享到臉書