電熱退火 的英文怎麼說

中文拼音 [diànrètuìhuǒ]
電熱退火 英文
electric annealing
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  2. Sanfeng electrical equipment co., ltd. is a professional manufacturer which products hf, solid hf, intermediate frequency, supersound frequency induction heating equipment, intermediate frequency overall anneal equipment and the installation of all - digital dc governor

    經營高頻焊管全套設備及其配件保定市三豐電器有限公司是專業生產高頻固態高頻中頻超音頻感應加熱設備中頻整體退火設備和全數字直流調速裝置的專業廠家。
  3. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  4. Responding to the call of industrial policy adjustment in our country, yaoyu special steel company has started replacing hot - rolling with cold - rolling in the production of electric steel since 2003. it entrusted xinye gaoke group to make design and build the production line of cold - rolled electric steel with annual output of 200 thousand tons. after three years of construction, it has achieved the successful trial production of 20 - roll mill and continuous annealing and coating machine imported from germany

    耀宇特鋼從2003年開始，響應國家產業政策調整的號召，開始電工鋼以冷代熱技改工程，委託新冶高科集團原冶金部鋼研院設計，進行年產20萬噸冷軋電工鋼生產線的建設，經過近三年的建設，目前從德國引進的20輥軋機及連續退火塗層機組均已試產成功，為提高產品的性能和質量，同時提升我國電工用薄鋼板的生產作出了卓越的貢獻。
  5. The resistivity of the films drops compared with the as - grown films, but the temperature of maximum magnetoresistance reaches 287k, very close to the room temperature. therefore it is not only an important improvement to fabricate the cmr bolometer which can work near room temperature, but also a prospective research for other applications such as magnetic - sensors, spintronics devices and infrared detectors

    同時，退火后薄膜的電阻率明顯下降，外加5t磁場時，最大磁電阻率溫度點上升到287k ，接近於室溫，這不僅為製作室溫超巨磁電阻測輻射熱儀打下了堅實的基礎，也為其它許多器件的應用提供了可能。
  6. Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1

    結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。
  7. Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material

    研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。
  8. By using the air temperature measured by thermocouples and the glass temperature measured by infrared thermometer as the training sample, a model for prediction of the temperature parameters for the float glass in lehr was created based on the ameliorated bp neural network

    摘要利用熱電偶測得的退火窯中空氣溫度和紅外測溫儀測得的玻璃表面溫度作為訓練樣本，建立了基於bp神經網路的玻璃溫度預測模型。
  9. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  10. The company consists of three workshops, namely cold - rolled steel strip workshop, piping workshop, anode plate of electrostatic precipitator workshop. equipped with a 700 continuous pickling line, a 700 double tandem rolling and three sets of bright annealing furnace with electric tunnel, the cold - rolled steel strip workshop can produce cold - rolled steel strip in sizes of 3506300. 51. 5mm. the workshop is also equipped with a set of 750 slitters and 1000 transverse cutter so as to supply cold - rolled steel sheet, pickling sheet, and hard rolled sheet in different width and length

    冷軋車間裝有一條700連續式酸洗線，一條700二連軋生產線，三組電熱罩式光亮退火爐，可生產3506300 . 51 . 5mm的冷軋光亮帶，並配有一套750縱剪機組和一套1000平整塗油橫切機組，可提供各種寬度和長度的冷軋薄板卷酸洗板卷軋硬板卷。
  11. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  12. Gas producer is widely used in forging, smeltingmetallurgical, heat treatment and drying equipment industryetc. suchas ： glass fumace, linme kiln, pottery kiln enamel, scouring pui kilns, chemical and refractory kiln, ferrosili - cin calcium carbide fumace and annealingkiln, etc

    煤氣發生爐廣泛用於鍛造、熔煉、冶金、化工、熱處理、烘乾設備等行業，如：玻璃爐窯、石灰窯、陶瓷窯搪瓷、精煉培燒窯、化工和耐火材料窯、硅鐵電石爐、退火窯等。
  13. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  14. Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed

    （ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。
  15. The doping of in of cdznte wafers was also achieved through annealing by adding in in the annealing sources. the specific parameters were established according to the thermodynamic principles of multi - component system. the properties of the wafers, including composition distribution, optical and electronical properties, were tested before and after annealing

    將退火與摻雜過程結合起來，根據多組分熱力學原理制定了退火摻雜的工藝參數，對比研究了摻雜退火前後成分分佈、 in摻入量、紅外透過率以及電阻率的變化情況。
  16. With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution

    隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。
  17. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  18. The development of solar cells is showing a tendency to improve efficiency and reduce cost. crystal silicon solar cells are considered the most promising cells in the future for their advantages, such as high efficiency, great stability, simple processing, and none - pollution

    主要工作包括三個部分：首先研究了不同溫度的熱退火對于矽片氧碳含量和少子壽命的影響，然後將熱處理過程應用於常規太陽電池的制備工藝，制出太陽電池。
  19. Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films, also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer

    薄膜區：專門沉積「介電層」 ， 「金屬層」等導電或不導電薄膜的區域，併兼做晶圓表面器件之平坦化及高（低）溫快速熱退火製程。
  20. To achieve this aim, the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis. three parts are studied in our work, firstly, the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied, then put it into the process of solar cell and compare the capability of solar cell in two process

    作為該項研究的先期工作，首先以p型（ 100 ）太陽電池用直拉矽片為實驗樣品，摸索出熱退火的最佳處理溫度；然後用常規工藝制備了單晶硅太陽電池，測試效率；結果發現用經過熱處理的矽片襯底制備的太陽電池比用沒有經過熱處理的矽片襯底制備的太陽電池其效率有明顯改善。
分享友人
分享到 Line

分享到臉書