電解半導體 的英文怎麼說

中文拼音 [diànjiěbàndǎo]
電解半導體 英文
electrolytic semiconductor
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 解動詞(解送) send under guard
  • : Ⅰ數詞1 (二分之一) half 2 (在 中間的) in the middle; halfway 3 (比喻很少) very little; the l...
  • : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
  • : 體構詞成分。
  • 電解 : electrolyze; electrolysis; electrolyzation; galvanolysis 電解銅 [冶金學] electrolytic [cathode] c...
  1. In the system, the collimation semiconductor laser - scanned beam scanning two perpendiculars direct of one plane of the measured workpiece at the same time is made. the beams with the dimension information of two perpendiculars direct are processed by the scanning receive system, the high - speed photoelectric transition and electronic data process. two measured results of the diametric directs and ellipse tolerance, etc, parameter, of the turning workpiece on the same plane are obtained by non - contact automatic measurement

    在單向激光掃描檢測技術的基礎之上,提出了一種雙向激光掃描檢測系統,其採用激光掃描檢測技術與特殊光學系統相結合,用準直激光掃描光束對被測工件徑向某一截面的兩個相互垂直方向同時掃描,經掃描接收光學系統、高速光變換、子學系統和微機數據處理系統,對將攜帶有垂直方向被測量信息的光束進行處理,實現了回轉工件同一截面兩個垂直方向的徑向尺寸和橢圓度等參數的非接觸自動測量,決了同時非接觸測量回轉零件同一截面兩個徑向尺寸的難題,它具有高速,高精度和非接觸自動測量等特點。
  2. Universal instruments is a global electronics productivity specialist, providing innovative circuit, semiconductor, and back - end assembly technologies and equipment, integrated system solutions, and process expertise to manufacturers in every sector of the global electronics industry

    環球儀器公司是一家全球性的子產品生產設備專業製造商,為全球子行業各領域的製造廠商提供富有創新性的路、、後端組裝技術和設備、集成系統決方案及專項工藝技術。
  3. Basing on other researchers ’ work, this paper has put forward a novel type of icc ( induced current cancellation ) shielding layer for rfic / mmic performance improvement, to reduce high frequency loss, increase q value, and expand its application frequency range. and present how to realize rfic / mmic components such as i / o pad, inductors, baluns and so on by applying icc shielding layer structures. furthermore co - design methods of ic component structure and foundry process structure designs has been presented in this thesis

    在無線通信技術對cmos射頻/微波集成路需求的大背景下,本論文提出了用於高頻集成路( rfic / mmic )器件的各類新型icc ( inducedcurrentcancellation ,感應流相消)屏蔽工藝結構,由此設計製造的ic部件決了傳統工藝無法實現射頻/微波集成路的難題,以達到降低高頻集成路器件的高頻損耗,提高器件q值以及擴寬器件應用頻帶的目的。
  4. The laps uses photo excitation of the semiconductor to probe the surface potential at the insulator - electrolyte interface. the semiconductor is addressed by a modulated flux of ( infrared ) photons : this flux results in the generation of hole - electron pairs in the semiconductor

    Laps的原理是基於場效應使器件對絕緣層與質溶液間界面位變化敏感,其結構類似於eis (質?絕緣層?)結構,它的特殊之處在於用光對進行照射引起質?絕緣層界面間位的變化。
  5. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘擴散是用聚焦的激光束局域加熱基片,將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術,具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點,可有效決單片光集成器件( oeics )中光、兩部分的工藝兼容這一難題。
  6. Detail specification for electronic component. semiconductor integrated circuit - type cd 7343 gs phaselocked loop fm stereo decoder

    子元器件詳細規范.集成路cd 7343 gs型鎖相環調頻立碼器
  7. We explained, for the first time, the detailed rules of electrostatic induction and polarization between electrostatic electrodes and different suspended objects ( conductor, semi - conductor, and dielectric )

    首次正確釋了靜極與不同懸浮介質)之間的靜感應和靜極化規律。
  8. Our products include glass substrates for lcd flat panel televisions, computer monitors and laptops ; ceramic substrates and filters for mobile emission control systems ; optical fiber, cable, hardware & equipment for telephone and internet communication networks ; optical biosensors for drug discovery ; and other advanced optics and specialty glass solutions for a number of industries including semiconductor, aerospace, defense, astronomy and metrology

    我們的產品包括用於lcd平板視、腦顯示器和筆記本腦的玻璃基板;用於移動排放控制系統的陶瓷載和過濾器;用於話和互聯通訊網路的光纖、光纜、以及硬和設備;用於藥物開發的光學生物傳感器;以及用於其它一些行業,例如、航空、國防、天文學和計量學的先進的光學和特殊玻璃決方案。
  9. As one of the several models to improve the drift - diffusion model, the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model

    漂移擴散模型自上世紀五十年代初一出現,就得到了人們的廣泛關注。但隨著微子技術的發展,它不能很好的中的有些現象,流動力學模型就應運而生了。
  10. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成路工藝技術結合子束光刻,反應離子刻蝕和剝離等技術制備和金屬納米結構,很好地決了普通光刻與子束光刻的匹配問題,提高了加工效率,經過多次的工藝實驗,摸索出一套制備納米結構的工藝方法,首次用子束光刻,反應離子刻蝕和剝離等技術制備出了多種納米結構(硅量子線、量子點,雙量子點和三叉指狀的金屬柵結構) 。
  11. ( 2 ) the encoder can work properly from - 10 c to 70 c, the output signals are stable

    ( 2 )該智能化磁編碼器能夠在? 10 70正常工作,信號輸出穩定準確,決了銻化銦磁敏阻溫度特性差的問題。
  12. Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s, this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically

    本文基於gaas等?族化合物的轉移子理論,結合絕緣gaas光開關中特有的lock - on效應的研究,提出了類似於耿疇(高場疇或偶極疇)的單極荷疇理論模型,對光開關lock - on效應的各種現象給出了理論釋。
  13. One solution employs a ferromagnetic metal to inject a spin - polarized current into a semiconductor

    決這種問題的辦法是,利用鐵磁金屬將自旋偏極化的流注入內。
  14. According to the current problems such as low quantum efficiency. limited available sun energy spectrum range, and inefficient recovery, resulted from the practical using of photocatalysis, using the narrowband semiconductor cds ( eg = 2. 5ev ) to compound with tio2 seems to be an effective solution. since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two, which makes the photo induced electron and holes separate more easily

    本文針對光催化技術應用中存在的tio _ 2光催化量子效率低,吸收利用太陽能光譜范圍有限,催化劑回收困難等問題,通過窄禁帶cds ( e = 2 . 5ev )的復合,對納米tio _ 2進行了改性研究,一方面,由於cds的窄禁帶寬度可以擴展薄膜的光譜吸收范圍,另一方面,由於能帶的交疊,提高了光生子和空穴的分離效率,從而提高了薄膜的光催化降效率。
  15. We are dedicated to becoming the top - rated supplier at each of our customers in the electronics value chain - from semiconductor fabrication, to device packaging and complete module and system assembly

    製造、元器件封裝到子模塊的裝配與保護,道康寧提供的創新性決方案可應用於子產業價值鏈的各個環節。
  16. Mr. wadaki views that when the technological limitations for semiconductors near in the market, the mobile device market for consumers may diversify, thereby expanding the market for their related electronic parts. he continued with emphasis that " through such growth, new technology as sip and mems can establish new business opportunities uniquely for the japanese market.

    和田木先生一邊指出今後即便市場技術已經到頭,只要面向消費者的移動機器市場實現多元化,那麼子產品的市場仍將會發展另一方面他也表達了自己的見: 「由於sip或mems等新技術是日本單獨確立起來的,它可以帶來新的商業機會」 。
  17. As a result, a theoretical model of fiber grating external cavity semiconductor lasers including the reflectivity distribution of fiber grating has been presented in this paper. based on the model, the laser characteristics such as the threshold current, mode suppression ratio etc. have been specified

    利用該模型對光纖光柵外腔激光器的閾值流、模式抑制比等進行了研究,得到了一些新的結論,並對此結論作出了合理的釋。
  18. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點,並根據物理知識,推出光層光生載流子橫向最大擴散長度(該擴散長度與液晶光閥光析度直接相關)與薄膜橫向和縱向率關系的表達式為:由於a - si : h在al金屬的誘作用下在不高於250的溫度下即開始晶化,本文對用金屬al誘非晶硅晶化制備的nc - si a - si : h薄膜進行研究。
  19. With this comes the threat of increased failure rates due to high device temperatures if cooling is not adequate

    本公司對于器件和源等變流裝置的散熱和溫控能從系統設計上決問題。
  20. Its products are widely used in the field of glass 、 pigments 、 ceramics 、 steel 、 feed additives 、 agriculture 、 semicoductors and electronics

    其產品廣泛應用於玻璃、陶瓷、錳、農業、飼料、子、太陽能和光材料等行業。
分享友人