電解晶體 的英文怎麼說
中文拼音 [diànjiějīngtǐ]
電解晶體
英文
electrolytic crystal- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 解 : 解動詞(解送) send under guard
- 晶 : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
- 體 : 體構詞成分。
- 電解 : electrolyze; electrolysis; electrolyzation; galvanolysis 電解銅 [冶金學] electrolytic [cathode] c...
- 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
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In order to find out the mechanism of bone growth and biodegradation of this kind materials animal experiment was adopted in this paper, by use of sem, epma and polarizing microscope it discussed the transformation of porous bioceramic after implanted in rabbit ' s femur. in this experiment we got some important findingsfirstly, after implanted the material began to degrade indeed
利用掃描電鏡、電子探針、 x光片以及甲苯胺藍和he染色等組織學觀測手段,本文探討了- tcp多孔生物陶瓷在植入骨內后結構形態與組成的變化,深入分析了- tcp多孔生物陶瓷的降解機理和晶體轉變過程。Affiliated with piezoelectric effect of quartz, inner nonlinear electric polarization is calculated, equivalent body bound charges and sueface bound charges under torque are approached
聯系石英晶體的壓電效應,計算出內部的電極化場,並利用電場等效原理求解出等效電極化體電荷與面電荷分佈。In other words, the electric energy helps to explain the cohesion of the crystal.
換句話說,電勢能有助於解釋該晶體的結合力。As a comparison, ba1. 03ce0. 8gd0. 2o3 - was synthesized by sol - gel method. among these samples, nonstoichiometric samples were synthesized for the first time. the research work involved : the crystal phase of the sinters were determined by xrd ; ionic conduction under different experimental atmospheres was measured by gas concentration cells ; performances of hydrogen - air fuel cells with the sinters as electrolytes and porous pt as electrodes were measured
用粉末x射線衍射儀鑒定它們的結晶相;在( 600 1000 )范圍內,以燒結體作為電解質隔膜,多孔性pt黑為正、負電極, pt - rh合金網為集電極,分別組成氫濃差電池、氧濃差電池及氫?空氣燃料電池並測定了它們的性能,研究了不同氣氛下樣品的離子導電特性及影響燃料電池性能的因素。The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes
本課程集中講解使用雙極結晶體管的電路,但所學技術同樣適用於使用jfet , mosfet , mesfet ,未來的稀有裝置,甚至真空管的電路。In this thesis, a kind of reversible immobilization method based on the plasma - polymerized film ( ppf ) used for effective immobilization of active bio - molecules and easy reproduction of sensors is developed. the surface of quartz crystal microbalance ( qcm ) is firstly prepared with plasma - polymerized film of butyl amine by glow - charge technique and then covered with a negative - charged polyelectrolyte by self - assembling. through strong electrostatic attraction, antibodies ( antigens ) positive - charged are immobilized for the determination of antigens ( antibodies )
本論文基於等離子體聚合膜,設計了一種既能固定生物活性物質又易於傳感器再生的可逆固定化方法,即採用輝光放電的等離子體沉積技術,先在石英晶體上沉積一層正丁胺等離子體聚合膜,再在膜上自組裝一層帶負電的聚電解質,用以靜電吸附固定抗體(抗原)測定抗原(抗體) 。The second part, a renewable piezoelectric immunosensor is developed for the antibody of schistosoma - japonicum ( sjab ). after incubating 32 kd molecular antigens of schistosoma japonicum ( sjag ) on the qcm by applying the immobilization above, the nonspecific sites on the immunosensor are sealed by using bsa and nrs together. the immunosensor can detect the sjab with the linear range of 0. 54 ~ 32. 50 ug / ml
以感染兔血清為檢測對象,採用聚電解質吸附固定法,將日本血吸蟲分子抗原( siag32kd )固定於石英晶振表面,再以牛血清白蛋白( bsa )和正常兔血清( nrs )聯合封閉晶振上非特異性活性位點,可在0 . 54 32 . 50ug ml范圍內檢測感染兔血清中日本血吸蟲抗體。In chapter two we analytically study the nonlinear lattice effects for the ground state of electron - phonon interaction one - dimensional molecular crystal system
第二章用解析方法研究一維分子晶體電子-聲子耦合系統基態中晶格非線性效應。Preparation and characterization of nanocrystalline thin films of al2o3 or tio2 doped scandia stabilized zirconia solid electrolytes
Al2o3或tio2摻雜的scsz固體電解質納米晶薄膜的制備及表徵The as - grown crystals were characterization by cutting and directional, x - ray diffraction, high resolution ohmmeter, ir transmission spectroscopy, visible light absorption spectroscopy, scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ). the ir transmittance of czt single crystals grown with cd - riched is about 53 %, while 23 % with no cd riched
採用解理實驗、 x射線衍射、電學性能測試、紅外透過譜測試、可見光吸收譜測試、 sem蝕坑分析、探測器的試制等分析測試方法,並首次採用正電子湮沒壽命譜分析方法來研究czt單晶體的空位缺陷,綜合表徵了所生長的晶體的質量和性能。Instead of relying on mechanical manipulations, majumdar and his colleagues speculated that silicon transistors might electrically control ions dissolved in fluids as well as they could electrons
因此馬強達和同事舍棄了機械控制方法,他們猜想矽電晶體或許能像控制電子流向一樣,以電子方式控制溶解在液體中的離子。The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes
本文就是在此背景下,利用金屬波導和單軸晶體的一些特性,結合麥克斯韋方程組和波導的邊界條件,從三種不同的情況研究了光在對稱平面單軸晶體金屬波導(波導層是單軸晶體,兩個波導界面均為金屬)內的傳輸特性,其主要貢獻為,首次解析地得到了這種波導結構下模式場的精確解,並發現了一些有用的特性: ( 1 )模式場的性質因單軸晶體的性質不同而異; ( 2 )當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時,波導中傳輸te波和tm波,只不過其主模因單軸晶體的性質不同而異,當波導層介質為負單軸晶體時,波導主模是te波主模,而波導層介質為正單軸晶體時波導主模是tm波主模。 ( 3 )當單軸晶體光軸位於波導面內時,對于正單軸晶體,波導的主模是橫電波te _ 0模,任何頻率的光波均可激勵該模式;當光波波長滿足一定條件時,波導內傳輸單模,否則,將激勵起高階模式,高階模即匪te波,也匪tm波,而是兩者耦合而成的混合模。2801 and lbg was used as polymer matrix because of their different hfp ratio, dbp was used as plasticizer. the films were made by bellcore method. structure, crystallinity, liquid uptake and conductivity of the films with different ratio of pvdf dbp sio2 was determined
本文用hfp含量不同的2801和lbg為基體, dbp為增塑劑,採用bellcore方法制膜,得到了聚合物電解質的結構、結晶度、吸液量和電導率隨sio _ 2 、增塑劑含量、聚合物結晶度的變化規律,並對納米無機粒子改性聚合物電解質的機理進行了一些探討。The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper
本文研究了用igc (惰性氣體蒸發凝聚原位溫壓法)制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅(冷軋紫銅、電解銅)在酸性硫酸銅溶液和中性含氯溶液中,在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法( cv )和電化學阻抗譜( eis )等方法。 x -射線衍射( xrd )的方法用來估算納米晶銅晶粒尺寸。The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem
論文的最後一章中,我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺( ddp ) ;研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性,並用量子化學計算方法模擬其單分子的空間構型;載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。The precise clock source is crystal oscillator made of 74hc04 ; the mute circuit can conceal the error and solve the problem of noise ; the antenna switching circuit in the receiver is to select one antenna from two which receives signal better. it can improve the quality of the receiving audio signal, restrain the noise effectively and promote the system performance
高精度的時鐘源是由74hc04構成的晶體振蕩器;靜音電路將出錯的音頻信號進行差錯掩蓋,很好地解決了噪聲問題;接收機採用兩副天線切換工作,提高了音頻信號接收質量,有效地抑制干擾,提升了系統的性能。The addition of pmma will reduce the crystallinity of blends and improve of the uptake of liquid electrolyte ( 260 % ) and the ion conductivity ( ims / cm ). at the same time the pvdf - hfp maintains the mechanical strength of blends film acting as polymer framework
Pmma的加入可以降低共混體系的結晶度,提高共混物的電解液吸收能力( 260 )和離子電導率( 1ms / cm ) ;同時pvdf - hfp起到骨架作用,使共混物膜具有足夠的機械強度。In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體,用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級,達到了10 ~ ( - 10 ) ( cm ) ~ ( - 1 ) ,解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難;對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究,通過優化生長工藝技術參數,突破了工藝技術生長難關,得到了高光學均勻性、具有大z切面的ktp單晶。Computers built between 1959 and 1964 are often regarded as " second generation " computers, based on transistors and printed circuits. the second generation of computers could handle interpreters, that accepting english - like commands
1959年到1964年間設計的計算機一般被稱為第二代計算機。大量採用了晶體管和印刷電路。它能運行解釋型語言程序。First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method
然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法,本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法,通過選擇單電子島電子數的主要狀態,建立單電子晶體管主方程,然後求解主方程,求得單電子晶體管spice等效模型的受控源的非線性函數,然後利用集成電路輔助分析軟體spice的abm (模擬行為建模)建立單電子晶體管( set ) spice等效模型,利用set的等效模型對單電子晶體管v - i特性進行模擬,實驗證明此方法與直接解主方程法相比具有一定的精度。分享友人