電阻膜 的英文怎麼說

中文拼音 [diànzǔmó]
電阻膜 英文
resistive film
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. The cdte films doped te are deposited onto glass substrate by close spaced sublimation. the x - ray diffraction data indicate the pure cdte films are polycrystalline zinc - blende structure with grain orientation predominantly along ( 111 ) direction. the electrical properties of cdte films are investigated by hall effect measurement using the van der pauw method

    X射線衍射分析表明，純cdte薄膜是立方閃鋅礦結構， （ 111 ）晶面取向生長； hall效應實驗測量發現薄膜電阻很高，呈p型電導，面電阻率數量級達1010
  2. As one of the most important applications, cmr bolometer is fabricated using the lacamno3 films, which has a metal - insulator transition temperature at 300k. the archetypal bolometer is fabricated after the film is photolithographed, evaporated au electrodes and fixed

    以製作室溫超巨磁電阻測輻射熱儀為目標，將t _ （ mt ） 300k ， tcr 5的薄膜進行光刻、電極製作、封裝等處理製作測輻射熱儀原型器件。
  3. Bismuth ruthenate and silver were selected as conductor phases and the mixture of calcium oxide - alumina - silicon dioxide ( cao - al _ 2o _ 3 - sio _ 2 ) glass and lead oxide - boron oxide - silicon dioxide ( pbo - b _ 2o _ 3 - sio _ 2 ) glass was selected as inorganic binder phases. it was found that, with the increasing of volume fraction of silver and conductor phase, sheet resistivities descend and there are critical thresholds

    實驗發現，隨著功能相百分含量的增加，電阻膜層的方阻值逐漸減小，存在兩個臨界閾值，電阻溫度系數偏向正值;功能相中銀百分含量增加，膜層的方阻值逐漸減小，有一個臨界閾值，電阻溫度系數偏向正值。
  4. A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film. a convictive explanation brought forward to illustrate the changing of the electrical ； properties of the ato thin film in different conditions

    在溫度較低時（ < 500 ） ，薄膜的方塊電阻隨成膜溫度的升高而降低；當基板溫度繼續升高，薄膜的方塊電阻隨基板溫度的升高而增大，這主要是因為玻璃基板中k ~ + 、 na ~ +離子向薄膜中的擴散。
  5. It not only gains the physical contrastive datum mark, but also improves the blm stability. cyclic voltammetry is used to study the characteristic of blm attached to metal surface, as the forming of blm, the voltammetric characteristics of blm, the selection of ion and measurement of different ki concentration

    就以上提出的處理方法，採用循環伏安法詳細研究了金屬表面所覆blm的基本性質，如：膜形成液的配製、膜的形成、膜電阻、膜的伏安特性、膜的擊穿電壓、離子的識別性及對不同濃度的碘化鉀溶液的測試。
  6. Traveling cranes, drying furnaces, transformer wiring facilities, transformer automatic inspection machines, pressure meters, insulation resistance meters, ac dc stabilized power sources, memory high coder brightness meters, light meters, film thickness meters, noise meters, hand thermometers

    起重機，乾燥爐，變壓器卷線設備，變壓器自動檢查機，耐壓計，絕緣電阻計，交流直流穩定性電源，內存快速編碼器亮度計，光度計，膜厚計，噪音計，手指尖溫度計
  7. Low field giant magneto - resistance in nife ag multilayers

    多層膜在低場下的巨磁電阻行為
  8. Giant magnetoresistance effect of granular films

    顆粒膜的巨磁電阻效應
  9. The effect of ion implantation on the giant magnetoresistance of granular film

    離子束改性對顆粒膜巨磁電阻效應的影響
  10. Magnetic properties of feco - sio2 granular film and its tunneling magnetoresistance effect

    2顆粒膜的磁性和隧道磁電阻效應研究
  11. Hybrid microcircuits. film deposit resistive integrated circuits. general requirements

    混合微電路.薄膜附著電阻集成電路.一般要求
  12. Aspects on developing nickle - film thermal resistance

    關于鎳薄膜熱電阻研製的幾個問題
  13. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  14. Test method for noise quality of film - type resistors

    膜式電阻器的噪聲等級試驗方法
  15. The chemical composition and microstructures of the insulating thin films prepared by different methods were analyzed by x - ray diffraction ( xrd ) and scanning electron micrograph ( sem ) ; other properties such as electric resistance, the breakdown field strength and dielectric properties were evaluated using high resistance meter, voltage resistance meter and precision impedance analyzer respectively

    採用x射線衍射儀（ xrd ）對表面絕緣薄膜的物相組成進行了分析，掃描電子顯微鏡（ sem ）對表面絕緣薄膜的微觀結構進行了研究，並用絕緣電阻測試儀、耐壓測試儀和精密阻抗分析儀分別對絕緣膜進行絕緣電阻率、擊穿場強和介電性能的測試。
  16. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  17. The sensor adopted micro melts technology and introduce aviation application science and technology ; using high temperature glass the micro processing silicon voltage dependent resistance strain gauge to melt on the stainless steel diaphragm

    傳感器採用的微熔技術，引進航空應用科技，利用高溫玻璃將微加工硅壓敏電阻應變片熔化在不銹鋼膜片上。
  18. Abstract : in this paper interactions of bilayer lipid membrane with clotrimazole as the antifungal agent were reported in order to interpret the action basis about the molecularbiology of this drug. using the injecting method ， we prepared three bilayer lipid membranes ( blm ) respectively, and by the cyclic voltammetry method we determined properties of blm before and after adding clotrimazole into the membranes. it was found that clotrimazole could remarkably reduce the membrane resistance and demonstrated that the drug as an antifungal substance might certainly change the permeability of bilayer lipid membrane

    文摘:報道了抗真菌藥克霉唑與人工脂膜的相互作用，試圖闡明該藥的分子生物學的作用基礎.用注射方法分別制備3種雙分子層脂膜（ blm ） ，並運用循環伏安法測量了修飾物克霉唑加入前後人工雙分子層脂膜的電性質.結果發現克霉唑可顯著降低膜電阻並證實該藥確能改變人工雙分子層脂膜的通透性
  19. But above 700, the resistivity decreases suddenly, as the nb ion diffuse from linbo3 into zno and occupied the interstitial sites. nb ions, as donor doping in zno film,

    Linbo3中的nb擴散到zno中去，占據間隙位置，相當于失主能級，形成電阻率低的n型zno薄膜。
  20. The process of sputtering resistance by woodceramics target was studied. the experiments proved that the film series could be used for a long time, with stability performance and could be used in farinfrared heating field

    研究了木質陶瓷鑲嵌靶鍍覆的電阻膜系的工藝，試驗表明該膜系可長時間使用，性能穩定，而且可以用於遠紅外加熱領域。
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