電離阱 的英文怎麼說

中文拼音 [diànlíjǐng]
電離阱 英文
ion-trap
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  1. With results coming so thick and fast, it is no wonder that, as monroe says, “ many feel that ion traps are well ahead of other technology in the quest to build a large - scale quantum computer

    看到這些能夠執行既多且快的成果，難怪門羅會說：很多人覺得，在建造大尺度的量子電腦上，離子阱比其他技術都先進多了。
  2. The study indicate that sral2o4 : tb3 + phosphor can be composed from 1250c to 1550c, the phosphor ' s luminance reduce and the afterglow time shorten along with the compounding temperature ; the better luminance and afterglow with the better crystalloid degree ; the luminescence of tb3 + ion in the sral2o4 is coming from the transition of 5d4 - 7fj ( j = 6, 5, . . . 0 ) ; the afterglow is because of the electron that seized in the trap released which integrate with the luminescence center

    合成發光體亮度隨合成溫度的降低而逐漸降低，余輝時間逐漸縮短；當合成物具有較好的結晶度時，合成的發光粉不僅發光亮度高而且余輝時間長； tb ~ （ 3 + ）離子在sral _ 2o _ 4基質晶格中的發光主要來自於~ 5d _ 4 ~ 7f _ j （ j = 6 ， 5 ， … … 0 ）的躍遷；其餘輝是因為不斷有被陷阱所俘獲的電子釋放出來與發光中心復合。
  3. The active aspects include ion traps, nuclear magnetic resonance ( nmr ) technique, quantum electrodynamics cavities, josephons junctions, and semiconductors quantum dots

    主要包括離子阱、核磁共振、量子電動力學腔、約瑟夫結和半導體量子點。
  4. In this thesis we discuss these three aspects in detail and our main research work is outlined as follows : in section 2 we first give a definition of entanglement and illustrate some distinctive qualities of entangled states, then explain how to describe entanglement of multi - particle quantum state. in section 3 we show many existing different schemes for preparation of entangled states by spontaneous parametric down conversation, cavity quantum electrodynamics and iron traps, moreover we present new schemes to prepare multi - atom entangled states as well as multi - cavity entangled states

    在第二章中我們將給出糾纏態的定義和度量，研究糾纏態的一些特性，第三章中我們將系統介紹目前理論上利用自發參量下轉換，通過腔量子電動力學和離子阱制備糾纏態的各種方案，以及在實驗上的進展，並在論文中重點提出了利用原子和腔場相互作用來制備多原子糾纏態和多腔場糾纏態的方案。
  5. ( 2 ) when the impurity in the center of the well, the binding energy of the impurity is decreased as the strength of applied electric field increased

    （ 2 ）當施主離子位於勢阱中心時，雜質的束縛能隨著電場強度的增大而減小。
  6. Portable long - range infrared surveillance system thermovision 2000 is a state - of - the - art long - range platform mounted thermal imaging system, offering unmatched performance with its long - wave gen - iii qwip sensor and internal three field of view optical system

    Thermovision 2000是尖端科技的長距離安裝有紅外熱像系統的監視平臺，提供無與倫比的第三代長波qwip quantum well infrared photondetector量子阱紅外光電探測器的性能和內置三種不同光學視場角25
  7. This is because the origin of the virial theorem value of 2 lies in the inverse square coulomb force being the only interaction seen by the electron and impurity ion

    其原因是在理想的一維、二維、三維結構中，對于雜質體系只存在電子和施主離子間的平方反比庫侖力，而沒有量子阱寬的限制。
  8. They are snaring individual ions in tar pits of light and magnetism and manipulating the spin of electrons in their orbits

    再不然，這些人就以光阱及磁阱捕捉個別的離子，以便操縱其軌道上電子的自旋。
  9. Because the atoms are so close to the wires, less than one watt of electric power is enough to operate this magnetic trap ? it could easily be run off the battery of a laptop computer

    由於原子云離導線相當近，產生這個磁阱所需要的電能不到一瓦特? ?一般筆記型電腦的電池便足以供應。
  10. ( 3 ) the electric field breaks the energy degeneracy for symmetrical impurity position in the well, the results show that the redshift and blueshift of the impurity stark energy shift as the impurity position. ( 4 ) under the same external electric field, the impurity stark energy shift is obviously different with the different aspect ratio of the quantum well wires

    （ 3 ）當施主離子位於勢阱中不同位置時，零電場下量子阱線中的雜質態是關于施主離子位置中心對稱的簡並態，在外加電場作用下發生能級分裂，這種簡並不再存在;雜質的stark能移由於施主離子位置的不同表現為紅移或藍移。
  11. The schemes which are puted forward at ' present have mainly made use of the interaction of atoms and optical - cavity, cold trapped ion, electronics spin or nuclear magnetic resonance, quantum dots manipulation and superconducting quantum interference etc.

    目前已經提出的方案主要利用了原子和光腔相互作用、冷阱束縛離子、電子或核自旋共振、量子點操縱、超導量子干涉等。
  12. In this paper, based on the previous works, we study the quality of a hydrogenic impurity in gaas / gai - xalxas rectangular quantum wires in detail. using variational approach, we calculate the binding energy and the photoionization cross - section of the impurity in the system

    本文在前人工作的基礎上，詳細研究了矩形截面gaas ga _ （ 1 - x ） al _ xas （ x = 0 . 3 ）量子阱線中的類氫雜質體系的性質，採用變分技術計算了此體系的束縛能及其光致電離截面。
  13. A model of the sic pn junctions irradiated by neutron is presented. the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically

    在輻照的電離效應方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。
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