電離離子化 的英文怎麼說

中文拼音 [diànlílízihuà]
電離離子化 英文
ionization
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 離子 : [物理學] ion
  1. It not only gains the physical contrastive datum mark, but also improves the blm stability. cyclic voltammetry is used to study the characteristic of blm attached to metal surface, as the forming of blm, the voltammetric characteristics of blm, the selection of ion and measurement of different ki concentration

    就以上提出的處理方法，採用循環伏安法詳細研究了金屬表面所覆blm的基本性質，如：膜形成液的配製、膜的形成、膜電阻、膜的伏安特性、膜的擊穿電壓、離子的識別性及對不同濃度的碘化鉀溶液的測試。
  2. The main use voltage principle, the macro - molecule water - soluble matter or peptide - lean, by the anoin and the cation, bring anoin by way of the pore, the sweat gland and the sebaceous glands aperture, will enter the skin

    主要利用電壓原理，將大分子的水溶性物質或多勝（月太）離子化，經正、負離子，將帶負電荷槍實彈的物質經由毛孔、汗腺和皮脂腺開口，進入皮膚。
  3. The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron, includes the process of electron - simulated desorption ( esd ), the process of desorption gas ionization and the process of the ion influencing the flashover

    Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎，包含了電子誘發脫附（ esd ） ，和脫附氣體離子化並對閃絡過程產生影響等過程，對表面閃絡現象進行了解釋。
  4. Sam has three ionizable groups besides the sulfonium pole : the carboxyl and the aminic groups of the amino acidic chain with pk 1. 8 and 7. 8 respectively and the aminic group of the purine with pk 3. 4. in an acid environment sam is positive charged, so it could be adsorbed by weak - acid cation exchange resin

    Sam除具有一個帶正電荷的鋶外，還有三個可離子化的基團： pk _ a分別為1 . 8 、 7 . 8的氨基酸鏈上的羧基和氨基， pk _ a為3 . 4的嘌呤環上的氨基。
  5. Determination of v - triazole, s - thiadiazole, s - oxadiazole derivatives by esi - ms

    ?二唑類衍生物的電噴霧離子化質譜法測定
  6. Pulse electric current heat treatment ( pecht ) developed by sodick, ltd., of japan, is a recently developed material processing method which consists of spark plasma sintering and welding, plasma activated sintering and welding, big pulse electric current ( bpec ) diffusion welding etc. the following are basic merits of pecht : rapid heating and cooling ; short sintering or welding time ; lowering sintering or welding temperature

    脈沖電流熱加工（ pulseelectriccurrentheattreatment ，比如燒結，焊接等）是九十年代發展起來的一種材料快速制備新技術，它包括放電等離子燒結與焊接、等離子活化燒結與焊接、脈沖大電流擴散焊接等。它具有升溫、降溫速度快、能在較低的溫度下燒結或焊接以及時間短的特點。
  7. The pyrogallol was adhered on the surface of the solid electrode by the direct oxidative electropolymerization to construct the chemical sensors for bi ( iii ). the sensor exhibits perfect long stability and reproducibility. a low detection was obtained in the determination of bi ( iii ) and this way can be applied to determine the real samples such as human hair and nails

    2 、將修飾劑鄰苯三酚直接電聚合到固體電極的表面，研製bi （ ）離子化學傳感器，該修飾電極穩定性和重現性很好，克服了以往碳糊電極機械強度差、重現性不好的缺陷，測定bi （ ）達到了很低的檢出限，應用於人發和指甲等實際樣品的測定。
  8. Heat treatment and magnetic properties of ferromagnetic bulk glassy alloy prepared by sps

    放電等離子燒結鐵磁性大塊非晶的晶化處理及其磁性能研究
  9. Intense pl band at 300 - 570nm, whose central position was found red - shifted with the increase of o content, was observed in the a - sihxoy thin films fabricated by pecvd. thin films with strong blue pl peaks were prepared by plasma oxidation, and the result directly proved that the blue pl peaks were originated from si - o defect levels

    通過pecvd法與放電等離子體氧化技術結合獲得了主峰位於藍光波段的熒光帶，而且具有分立峰結構，其結果直接證明了藍光發射與缺陷能級有關，起源於si - o結合特定組態而形成的發光中心。
  10. Once the sapphire was covered with nanotubes, they could place the metal electrodes of the transistors wherever they wanted and remove the unwanted nanotubes with highly ionized oxygen gas

    藍寶石上覆蓋奈米管后，就可在任意的位置安裝電晶體的金屬電極，再以高度離子化的氧氣除去不需要的奈米管。
  11. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
  12. In a plasma accelerator, the role of the accelerating structure is played by the plasma, an ionized gas

    在電漿加速器里，加速結構的角色是由電漿（一種離子化的氣體）所扮演。
  13. Electric current from a tiny battery within the patch could widen cell gaps and push ionized drug molecules through them

    有的藥用貼片內安裝有微型電池，產生電流使細胞間隙擴張后，再將離子化的藥物分子帶入。
  14. In this work, un - doped and nano sic doped mgb2 / fe tapes and wires were fabricated by the powder in tube ( pit ) technique, and the short samples were synthesized through two different routes of the traditional vacuum sintering and the sparking plasma sintering ( sps ). the sintering parameters were optimized in both sintering methods

    本文採用粉末套管法（ powderintube ）原位（ in - situ ）制備了非摻雜和納米sic摻雜的mgb2 / fe超導線帶材，分別採用常規真空燒結和放電等離子燒結（ sps ）兩種方式合成mgb2超導相，優化了燒結工藝參數。
  15. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  16. The product widely applies in profession domain and so on the galvanization, ion coating, electron, mechanical hardware components, automobile, aviation, national defense weapon, clock and watch, glass product, chemical fiber, medical instrument, liquid crystal, optics, jewelry, bearing

    產品廣泛應用於電鍍離子鍍膜電子機械五金零件汽車航空國防武器鐘表玻璃製品化纖醫療器械液晶光學珠寶軸承等行業領域。
  17. In addition, we are highly interested to study non - covalent interaction involved in the protein quaternary structure by using various biophysical methods ( including analytical ultracentrifugation and nanospray - esi - ms ) as these approaches can be applied to decipher protein - protein interaction

    此外，我們也使用一些生物物理的方法，例如分析型超高速離心、電子噴?離子化質譜技術，探討在蛋白質四級結構中的非共價性結合的交互作用，希望所得的結果能夠應用在蛋白質與蛋白質的交互作用。
  18. It neutralizes static charge on the tergeted object via it ' s special conduits. it is easy to operate and install. nopower supply is needed. it can de applied in printing or leather, paper manufacturing. it is durable used

    利用極細導電性金屬纖維與帶電體接近，雙方有極大不等的電位差，促使帶電體附近空氣離子化而使璉電體之靜電中和消除，無加裝電源。
  19. Any products were prepared without impurities. the sps method was used to sintering the zrnisn - based compounds. the influence of different reaction temperature and holding time to density was discussed in detail

    採用放電等離子法（ sps ）燒結制備zrnisn基化合物，並探討了不同的燒結溫度和燒結時間對材料緻密度的影響。
  20. Research on treating tail gases exhausted from diesel engine by pulse corona plasma

    脈沖電暈放電等離子體凈化柴油機尾氣的應用研究
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