電驅動膜分離 的英文怎麼說

中文拼音 [diàndòngfēn]
電驅動膜分離 英文
electrically-driven membrane separa-tion
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 動詞1. (趕) drive (a horse, car, etc. ) 2. (快跑) run quickly 3. (趕走) expel; disperse
  • : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
  • : 分Ⅰ名詞1. (成分) component 2. (職責和權利的限度) what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] (料想) judge
  • : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
  • 驅動 : [機械工程] drive; prime mover
  1. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄沉積,得到了含氮量為21at的cn薄;研究了襯底溫度和反應氣體壓強對薄結構特性的影響,給出了cn薄中n含量較小、 sp ~ 3鍵合結構成較少和薄中僅含有局域cn晶體的原因;引入脈沖輝光放子體增強pld的氣相反應,給出了提高薄晶態sp ~ 3鍵合結構成和薄的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄;探討了cn薄形貌、成、晶體結構、價鍵狀態等特性及其與氣體壓強和放流的關系,證明了- c _ 3n _ 4薄沉積為滿足力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄生長過程進行了實時診斷,得到了實驗參量對等子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄沉積的主要反應前物,揭示了cn薄特性和等子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄的結構特性,揭示了si原子對薄生長過程的影響,給出了si基表面碳氮薄的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄沉積,證明了通過控制材料表面力學條件可以改變碳氮薄結構特性,並可顯著提高晶態碳氮材料的生長速率。
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