非立方晶體 的英文怎麼說

中文拼音 [fēilìfāngjīngtǐ]
非立方晶體 英文
non-cubic crystal
  • 非 : Ⅰ名詞1 （錯誤） mistake; wrong; errors 2 （指非洲） short for africa 3 （姓氏） a surname Ⅱ動詞1 ...
  • 立 : 動1 （站） stand; remain in an erect position 2 （使豎立; 使物件的上端向上） erect; stand; set up...
  • 方 : Ⅰ名詞1 （方形; 方體） square 2 [數學] （乘方） involution; power 3 （方向） direction 4 （方面） ...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 立方 : 1. [數學] cube 2. [簡] （立方體） cube3. （立方米） cubic metre; stere
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Finally, an amorphous structure is formed mainly with rhombohedral structures mixed up with clusters of cubic ( fcc, bcc ) and hcp structures

    最後形成一種新型的以菱面體結構為主、夾雜著立方體、六角密集等團簇結構所組成的非晶態結構。
  2. The connection between the torque and the polarized charges is established. on the base of mathematical model of torsional effect, using multivariate unrestrained nonlinear optimization method, we research cutting angles and parameters of crosssection to get best torsional sensitivity

    在建立石英晶體扭轉效應模型的基礎上，應用多變量、無約束非線性優化方法對于晶體切型、截面形狀等參數進行了優化，以獲得最佳扭轉靈敏度。
  3. Abstract : there are offered many ways how to improve work of a spark plug. but one of the m ost important problems has not been solved yet. this is a thermal mode operation of a spark plug. the ideal spark plug should be instantly heated at the moment of occurrence of a spark and instantly cooled down in expectation of the foll owing electrical pulse. thus it balances between preservation of heat for self ? c leaning from scale and its removal in avoidance self ? ignition. in this article a uthor managed for this time to offer a spark plug with capability “ self ? regula tion ” of heat flux removed from a zone of ignition. essence of the offer is a t ip ， which is transparent for heat flux. it is produced from single crystal of sap phire

    文摘:在如何提高火花塞的工作質量方面有多種方法，但是其中最重要的一個問題還沒有得到解決，那就是火花塞工作的熱學模型問題.理想的火花塞應該能在點火的瞬間被立刻加熱，並且在接下來的電脈沖過程中迅速冷卻，由此在熱量的存儲與散發之間取得平衡，以避免自點火.本文力圖展示一種具有自動調節源於點火區域熱流能力的火花塞，其技術的關鍵是頂部絕緣體材料，它是由藍寶石單晶製作，而非傳統的氧化鋁陶瓷
  4. Presents the microstructure evolution in aluminum a nd copper after deformation by cold rolling in the strain range of 10 to 50 % red uction using tem and points out three types of dislocation structures are typica l and two of them are common for both materials and these two common types are f ound in non - cube grains and can be distinguished by crystallographic orientatio n of dislocation boundaries in the grains and the third type of structure is obs erved in cube grains, and concludes that grain orientation is important in deter mining the structure type but some other metallurgical parameters also have a ro le to play

    採用tem對冷軋多晶銅與多晶鋁的形變顯微組織演變進行了對比研究.結果發現：多晶銅及多晶鋁形變顯微組織中均含有三類典型的位錯結構類型，其中的兩種結構特徵在兩種材料中是相似的，這兩種類型結構存在於非立方取向晶粒，可通過晶粒中位錯邊界的晶體學取向加以區別，另一類型結構存在於立方取向晶粒；晶粒的晶體學取向決定了其形變顯微組織類型，但其它冶金學因素對顯微組織也有影響
  5. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  6. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  7. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  8. In this thesis, we study the nonlinear effects in electron - phonon interaction of one or quasi - one dimensional system with the nonlinearity of phonon ( lattice ). using the variational method and coherent method we study the ground state properties of one - dimensional molecular crystal and the soliton characteristics in protein molecular chain, respectively

    本文以較簡單的一維（或準一維）電子-聲子耦合系統為對象，在計入聲子（晶格）非線性的條件下，分別採用變分法和量子相干態方法研究了一維分子晶體基態的性質和蛋白質分子鏈中孤立子特性。
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