非集成元件 的英文怎麼說

中文拼音 [fēijíchéngyuánjiàn]
非集成元件 英文
non-integrable component
  • 非 : Ⅰ名詞1 （錯誤） mistake; wrong; errors 2 （指非洲） short for africa 3 （姓氏） a surname Ⅱ動詞1 ...
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  1. We hold that the integrate effect consists of two parts : 1 + 1 > 2 and a + b = c, in terms of math : here x1, x2, . . . , xn : integrate units s : functions of new system what features an integrated system are subjective initiative, non - linear function, dynamic connection, sub - system uncertainty, selective competition. the basic factors of integration are integrate context, integrate units, integrate interface and environment, which form the integration condition respectively the basic integrate patterns covers point - to - point, pipeline and hub

    首先，深入探討了集成的內涵，即集成是指為了實現某一目標，在一定的集成環境中，若干集成單元動態地集合成一個泛邊界狀態的有機整體的過程，指出集成效應的數學解釋除了1 + 1 2外，還應該包括： a + b = c ，即若以x _ 1 ， x _ 2 ， … … ， x _ n代表集成單元， s代表集成后新系統的總功能，那麼其特徵有：主體行為性、功能非線性、關系動態性、單元泛化性、選擇競爭性；集成的基本要素包括集成背景、集成單元、集成界面和集成環境等四要素；基本模式有點到點模式、管線型模式和集線器型模式；基本條件有集成背景條件、集成單元條件、集成界面條件和集成環境條件。
  2. Secondly, this paper illustrated the nonlinear phase dynamic theory of the aia array and the application of it to power - combining and beam - scaning technique. according to these theories, the coupling parameter of nearest neighbors was found by experiment, then the two - element and three - element aia array were designed, and the result of measurement was in agree with that of the nonlinear phase dynamic theory, and the beam - scaning of two - element array was realized by tuning the free oscillation frequency of the elements

    其次，本文討論了有源集成天線陣列的非線性相位動態理論以及它在功率合成和波束掃描方面的應用，包括同步工作條件、穩定條件和相位動態方程等，通過實驗確定了陣列中相鄰單元間耦合參數，並將之運用於有源集成天線二元陣和三元陣的設計，實驗結果與理論結果吻合較好。
  3. Detail specification for electronic components. semiconductor integrated circuit ct54h20 ct74h20 dual 4 - input positive - nand gate

    電子元器件詳細規范.半導體集成電路ct54h20 ct74h20型雙4輸入與非門
  4. Detail specification for electronic components. semiconductor integrated circuit. ct54ls00 ct74ls00 quadruple 2 - input positive - nand gate

    電子元器件詳細規范.半導體集成電路. ct54ls00 ct74ls00型四2輸入與非門
  5. The designing process of the edac circuit is described in the paper. the time simulation is analysed, too. the designment of the circuit has access the hardware debug, and can woks normally

    此外還將第一輪設計中的基本邏輯器件如與、或、非門以及諸如244 、 255 、譯碼器等小規模元器件都集成到fpga內部來實現。
  6. Firstly, this part analyzes location, natural conditions and natural resources, population and labors, socio - economic elements, and the impacts of global political and economic environment change on unbalanced development of japanese regional economy. secondly, through analysis on regional development before the meiji reformation, industrialization, formation of dual structure and regional development after war, this part puts forward that unbalanced development is an objective law and regional development policies of government ca n ' t change structure of unbalanced development essentially. finally, this part sums up motive mechanism of unbalanced development of japanese regional economy, including location directional feature, scale economy, congregation and diffusion economy, putting forward that the overall effects of the three types of mechanisms stated above can be summarized as industrial group effects, which is also the important mechanism of unbalanced development of japanese regional economy

    首先，分析了區位條件、自然條件與自然資源、人口與勞動力條件、社會經濟條件、國際政治經濟環境的變化對日本區域經濟非均衡發展的影響；其次，通過對日本明治維新前的地域開發、工業化及其二元結構的形成以及戰后的地區開發等過程進行了剖析，認為區域經濟非均衡發展是一個客觀規律，政府的地區開發政策並不能從根本上改變非均衡發展的格局；第三，總結了日本區域經濟非均衡發展的動力機制，主要包括區位指向性、規模經濟、集聚與擴散效應，指出上述三種機制的綜合作用可以概括為產業集群效應，即產業集群也是日本區域經濟非均衡發展的重要機制。
  7. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  8. Abstract : according to dea method, this paper father studies how decision making units to achieve their minimum cost and maximum revenue in production possibility set under some restricted conditions, it also proposes the calculating formulas of cost and revenue efficiency

    文摘:根據dea的方法原理，在求最小成本、最大收益非參數方法的基礎上，進一步研究了一定約束條件下在生產可能集內最小成本及最大收益的計算方法，並給出了相應生產單元成本和收益效率的分析模型。
  9. Based on kuroda ' s identities, parabolic lossless nonuniform transmission line ( ntl ) can be represented by the equivalent circuit consisting of lossless uniform transmission line and lumped elements

    科羅達等效方法可將拋物線型無損非均勻傳輸線用均勻傳輸線及若干集中參數元件組成的等效電路表示。
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