靶襯底 的英文怎麼說
中文拼音 [bǎchènde]
靶襯底
英文
target backing-
Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target
本文研究用脈沖激光燒蝕石墨靶方法在單晶硅、 k9玻璃等襯底上生長超硬非晶碳膜。Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon
用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )
使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon
研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected
本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。Energies, incident angles and positions are the fundamental dynamic coefficients of atoms reaching the substrate to form the film and will greatly influence the forming process of the film and consequently the characteristics of the resulting film
在射頻磁控濺射中，成膜粒子到達靶面時的能量、入射角度、位置分佈對下一步薄膜生長的過程及薄膜性質有著重要的影響，它決定了成膜粒子在襯底上的運動。During the inspection by afm and sem, we found that the surfaces morphology of samples was even and smooth, the surface roughness was small. the films were composed of some excellent columnar crystallites. the xps results were found that zn existed only in the oxidized state and the concentration of al was less and the presence of loosely bound oxygen on the surface of azo thin films was reduced after ar + etching
由以上對azo薄膜的組織結構和光電性質的研究，我們得到了用直流反應磁控濺射法制備azo薄膜的最佳工藝條件為:氧氬比0 . 3 / 27 ，襯底溫度200 ，工作壓強5pa ，靶基距7 . 5cm ，功率58w ，退火溫度400 。Lacamno3 films were prepared on two different substrates ( srtio3 and laalo3 ) by excimer pulsed laser deposition method using the lacamno3 polycrystalline materials doped with 4wt % ag, which exhibits an excellent properties. a reliable process is obtained through repeated experiments and summaries
我們以優質摻ag4wt的lacamno _ 3多晶為靶材，利用準分子脈沖激光沉積法分別在srtio _ 3和laalo _ 3襯底上制備薄膜，經過摸索和實驗，得到了較為成熟的工藝流程。Distance between target and substrate get longer also increase the transmission of aln films. as the temperature of substrate get higher, the transmission of ultrathin aluminum films decrease slightly. nitrogen gas concentration and sputtering time barely take effect on the transmission of aln films
發現，隨著工作壓強的升高、靶距的增加，薄膜的透光率上升;基片溫度的升高在非晶襯底上會導致樣品透光率的下降;而氮氣濃度和濺射時間對薄膜的透光率影響不大。分享友人