飽和閾 的英文怎麼說

中文拼音 [bǎohéyù]
飽和閾 英文
threshold saturation
  • 飽 : Ⅰ形容詞1 （吃足） have eaten one s fill; be full 2 （充實; 飽滿） full; plump Ⅱ副詞（充足; 充分）...
  • 和 : 和動詞（在粉狀物中加液體攪拌或揉弄使有黏性） mix （powder） with water, etc. : 和點兒灰泥 prepare some plaster
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 飽和 : （在一定溫度壓力下, 溶液可含溶質的量達到最大限度, 不能再溶解, 泛指事物達到最高限度） saturation; saturated
  1. Particularly, cr4 + - doped crystals as passive q - switch ( saturable absorber ) have got extensive attention, such as cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4 and cr4 + : yso, which have the advantages of wild absorption band, good saturable absorption, long restored time, good photo - chemical stability, no fading, good thermal conductivity and high damage threshold

    特別是近年來，摻cr4 +離子的各種晶體如cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4和cr4 + : yso等作為被動調q開關受到了廣泛的關注。它們具有很寬的吸收帶和良好的飽和吸收性質，恢復時間較長，光化學性質穩定，無退化現象，熱導性好，損傷閾值高。
  2. The relation between area of ccd saturation and 0. 632 m 、 1. 06 m laser power / energy was measured. the ccd camera was disturbed by strong radiation from laser outside the field of view in experiment. the relation between the area of ccd saturation and off - axis angle was measured

    通過實驗，得到激光干擾ka - 320型面陣ccd光電探測器的像元飽和閾值、探測器靶面飽和閾值、局域損傷閾值，並得到了0 . 632 m與1 . 06 m波段入射激光功率與ccd靶面飽和程度的對應關系曲線，了解了面陣ccd探測器受激光干擾的各個階段。
  3. Experimental study on that 532nm 、 1064nm 、 1319nm 5khz frequency pw laser irradiate the ccd respectively. with the data of experiment, the thresholds of laser power density that induce ccd saturation, crosstalk and irreparability damage were calculated. the phenomenon that 532nm 5khz laser can induce part of ccd functional damage but absolutely damage was found

    根據實驗數據計算了532nm 、 1064nm高重頻脈沖激光使ccd出現飽和、串擾以及被破壞的功率密度閾值;實驗發現一定功率密度的高重頻532nm脈沖激光可以使ccd局部損傷而不致整體破壞;實驗進一步證實了1319nm激光不能使可見光ccd產生響應。
  4. We also calculated the threshold and efficiency curves with the crystal length, pump power, wavelength of signal wave and mismatch etc on the single resonance oscillator ( sro ) of clbo. the most obviously difference of dro and sro is that when the pump power is higher and the crystal length is longer, the efficiency curves become smooth but not descend in comparing sro to that of dro

    在對單諧振和雙諧振的振蕩閾值和轉換效率的理論研究中，得到了單諧振與雙諧振不同的是：在單諧振情況下，隨泵浦強度、晶體長度的增加，轉換效率曲線只有飽和的趨勢，而無下降趨勢的結論。
  5. In the condition of second order transition, expressions of threshold and saturation field strength are deduced, the relations between the expressions and the parameters of lc cell including anchoring energy are calculated in detail and the tendency is expressed

    在二級轉變的條件下導出閾值場強和飽和場強的表達式，詳細計算了它們與液晶盒參量包括錨定能參量的關系，得到它們的變化趨勢。
  6. Based on these foundations, we give a perfect scheme of the bbo opos : single pass amplification coefficient of the opg under different pump intensity is calculated ; collinear type - i and type - ii phase matching tuning curve pumped by the q switch nd : yag various harmonics as well as noncollinear type - i tuning curve are calculated in details ; the effect of the walkoff for the nonlinear effect coefficient and the group velocity matching are analyzed ; the acceptance angle in parametric process is calculated ; the numerical threshold of the bbo opo is calculated ; the process of the saturation and depletion of the pump beam are analyzed ; the relationship of the conversion efficiency and reflectance of output mirror are discussed ; various linewidth controlling methods are discussed ; the improvement of the beam quality applying the unstable cavity is discussed ; and the crystal bbo design is considered

    在此基礎上，給出了一整套bbo - opo激光參數設計方案：計算了不同泵浦強度下的參量放大倍數；詳細計算了在nd : yag調q激光器各次諧波泵浦條件下的共線類和類相位匹配的調諧曲線，以及非共線類相位匹配調諧曲線；分析了走離角對非線性系數和群速匹配的影響；計算了參量過程的允許角；計算了bbo - opo的理論閾值條件；分析了飽和與泵浦光束的消耗過程；給出了轉換效率與超過泵浦閾值的倍數的關系；討論了轉換效率與輸出鏡反射率的關系；討論了線寬控制的各種方法；研究了利用非穩腔改善光束質量的方法；考慮了bbo晶體的設計。
  7. But an unusual case that the threshold strength may lager than or equal to the saturation strength emerges in their results

    但計算結果出現了閾值場強大於或等於飽和場強的反常情況。
  8. The influence of the flexoelectric effect on the threshold voltage, the saturation voltage and the symmetry breaking parameter is discussed and calculated carefully

    撓曲電效應對閾值電壓、飽和電壓和對稱性破缺參量有重要影響。
  9. Applying the differential equation and boundary condition of the director tilt angle, the essential characters are discussed, which include the threshold voltage and the saturation voltage

    根據滿足的微分方程和邊界條件，研究了液晶盒的基本性質，包括閾值電壓和飽和電壓。
  10. We have proved that the surface energy induced by the flexoelectric effect has the same form but inverse sign at the up or down substrate. the expressions of the threshold voltage and the saturated voltage which have correlation with e1 + e3 ( the flexoelectric coefficients )

    給出了閾值電壓和飽和電壓的表達式，它們都與e _ 1 + e _ 3 （撓曲電系數）有關，即撓曲電效應將導致閾值電壓和飽和電壓的變化。
  11. The threshold voltage decreases when the anchoring energy decreases and it increases as the tilt angle increases because of k33 > k22. the saturation voltage decreases when the anchoring energy decreases and it increases as the tilt angle reduces due to k22 < k11

    由於k _ （ 33 ） k _ （ 22 ） ，閾值電壓隨著錨定能的減小而減小，隨著預傾角的增大而增大：飽和電壓隨著錨定能的減小而減小，隨著預傾角的減小而增大，而這要歸因於k _ （ 22 ） k _ （ 11 ） 。
  12. The threshold and saturation voltage are important technology parameters in lcd. in this paper, by linearization method of the continuum theory of nematic liquid crystal, we show the analyzed results of threshold and saturation voltage of ips mode with tilt angle and weak surface anchoring conditions

    在液晶顯示器中，閾值電壓和飽和電壓是液晶顯示器的重要工藝參數，本文從連續體理論出發，同樣利用線性化處理的方法，給出弱錨定邊界條件下，有預傾角的ips型盒的閾值和飽和電壓的解析結果。
  13. Once the field is larger than the threshold field, the molecules of liquid crystal tend to the magnetic field direction and they will align to the magnetic completely under some conditions i. e. it is saturated so it is important to calculate the threshold and saturation field

    在平衡狀態下，兩個轉矩的作用相互抵消。一旦磁場強度超過一定的閾值，液晶內部的分子將更易於沿外磁場方向的排列。一定條件下分子完全沿磁場排列，即達到飽和。
  14. In detail, the major work that have been done are as follows : l. irradiated by the 1. 06 m 1. 319 m 3. 8 m laser respectively, when the incident laser power density is between the saturation threshold and the damage threshold, the vibrating phenomenon and the zero - output phenomenon can be seen in the pv - type detectors " response curve

    論文的主要工作有： 1分別用波長為1 . 06 m 、 1 . 319 m 、 3 . 8 m的激光輻照光伏型（ pv ） hgcdte探測器，實驗發現，當輻照激光的功率密度大於其飽和閾值而小於其破壞閾值時，探測器的輸出存在「振蕩現象」和「零壓輸出現象」 。
  15. Experimental study on that 1064nm 、 1319nm cw laser irradiate the visible light linear array ccd respectively. with the data of experiment, the thresholds of laser power density that make the ccd saturation, crosstalk and thermal saturation were calculated

    通過實驗獲得了1064nm連續激光使ccd成像系統光飽和、串擾、熱飽和的功率密度閾值;分析了線陣ccd的橫向光飽和效應;初步證實了可見光ccd對1319nm激光的不響應特性。
  16. The results indicate : when reduced anchoring strength a is large and = 0 or > 0, the first order transition may occur at threshold point or at saturation point ; when a is very lager and = 0 and > 0, the uniform twisted solution jumps directly to the saturation solution

    結果表明：當反映錨定強度的參量（ = k _ （ 22 ） ? al ）較大，且修正參量= 0或0時，在閾值點或飽和點可以發生一級轉變。當很大，且修正參量= 0或0時，還會發生均勻扭曲解直接轉變為飽和解。
  17. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態，根據其沿溝道非均勻分佈的模型，採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導，並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
  18. The threshold strength and the saturation strength are calculated for the first order transition

    同時計算了相應的閾值場強和飽和場強。
  19. The director in nlc cell may be expressed by one angle parameter 9 or, and it is called one dimension problem ; the director expressed by two angle parameters 6 and, called two dimension problem ; the paper consists of two absolute parts : l. the first order freedricksz transition at saturation point for the weak anchoring nlc cell the first order freedricksz transition ( the first order transition ) at threshold point has been studied by a lot of theoretical works

    液晶盒內指向矢可用一個角量或表示稱為一維問題，需要用兩個角參量和表示稱為二維問題。本文由兩個獨立的工作構成： 1弱錨定向列液晶盒在飽和點的一級freedericksz轉變現有的理論工作都討論在閾值點的一級freedericksz轉變（一級轉變） 。
  20. The threshold and saturation problems of lc cell can be studied at the same time using the new variable

    在新變量下得到的方程可以同時處理液晶盒的閾值問題和飽和問題。
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