高壓器件 的英文怎麼說

中文拼音 [gāoyāqìjiàn]
高壓器件 英文
high tension apparatus
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 壓 : 壓構詞成分。
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 高壓 : 1 （殘酷迫害; 極度壓制） high handed 2 [氣象學] （高氣壓） high pressure3 （高電壓） high tension...
  1. We found that tio2 thin films are a amorphism when they are not annealed ; they are anatase when annealed at 300 c ; rutile occured be anneled at 700 ; ti02 thin films are transformed into rutile completely when be anneled at 1100. oxygen - sensing properties of tio2 thin films were analysised, and we found the variation law of sensitivity with the partial pressure of o2 and temperatures. sensitivity increases with po2 / ( po2 + pn2 ) at a constant temperature. the higher working temperature is, the slower sensitivity increasing with po2 / ( po2 + pn2 ) is

    對tio _ 2薄膜氧敏器件特性進行了分析，發現靈敏度隨工作溫度和氧分壓變化的規律， 400以上時，在一定工作溫度下，隨氧分壓的增加，靈敏度逐漸升高；工作溫度越高，隨p _ （ o _ 2 ） （ p _ （ o _ 2 ） + p _ （ n _ 2 ） ）的增加，靈敏度增加越緩慢，在400下靈敏度隨氧分壓增加最快；在我們所測試的工作溫度點中， 400時具有最高的靈敏度，相對於他人的工作此溫度是比較低的。
  2. A thin epitaxial layer ( 10gm ) ldmos device used n - burry layer structure was proposed in the paper during the high - voltage device design, which is helpful to improve the drive circu it ? technology

    在高壓器件研究中，提出了一種外延層厚度為10 m採用n埋層結構薄外延高壓ldmos器件，對進一步改進驅動電路的工藝有著積極的意義。
  3. Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage

    針對目前厚外延工藝的缺點，提出的薄外延ldmos採用n埋層，通過優化n埋層長度、注入劑量可提高器件耐壓。
  4. This paper deriving the theory work inflection point in the static stage characteristics curve of small measurement range linear dimension measurement. by the way of high pressure and back pressure pneumatic measure and designed the parameter of the mainly and measure spray head, which are the key component in the spray head - baffle pneumatic sensor. the different groups for the main - spray head and the measure spray head, will effect the dynamic and static stage characteristic parameter. the author have done contrast experiment and optimization design to test and verify the theory derivation whereby made the rang of show valve of pneumatic measure system measure range up to 40 u m, the sensitivity up to 100mv / u m, resolution up to 0. 05 p m, the uncertainly of measure is less than 0. o2 u m, satisfaction of requirement of groups the carboy hatch thickness size precise measure of soft shims

    對高壓背壓式氣動測量用於小量程線性尺寸測量的靜態特性曲線的理論工作拐點進行了推導，對氣動測量系統中的噴嘴-擋板型氣動傳感器中的關鍵部件? ?主噴嘴和測量噴嘴的參數進行了理論設計，對主噴嘴和測量噴嘴的不同組合，將影響測量系統靜、動態特性指標的噴嘴參數進行了對比實驗和優化設計，並通過實驗驗證了理論推導，從而使氣動測量系統量程的示值范圍達到40 m ，靈敏度達到100mv m ，解析度達到0 . 05 m ，測量不確定度小於0 . 2 m ，滿足了壓縮機缸蓋軟體墊片厚度尺寸精密測量分組的要求。
  5. Organic electroluminescent devices ( oleds ) have aroused many scientists " interests because of their potential adventages in low - power, emissive, flexible, cost - competitive, flat panel displays. red, green and blue light - emitting devices are readily avaible

    有機薄膜電致發光器件具有驅動電壓低、發光效率高、制備容易、可製成大面積的平板顯示器以及顏色豐富等特點，已引起各國科學工作者的廣泛關注。
  6. During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state

    在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。
  7. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  8. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  9. Manufacturer of electronic components and solutions for original equipment manufacturers in the telecom, multimedia, automotive and industrial control sectors

    -生產各種環氧樹脂灌封料，主要應用高壓器件變壓器點火器led等電子器件。
  10. Author has accomplished the experiments of high - voltage devices and drive circuits

    完成了高壓器件與驅動電路的工藝實驗。
  11. A novel self - bias high - voltage device structure for the start - up circuit of an off - line switching model power supply ic is described

    摘要設計了一種新的用於離線式集成開關電源啟動電路的自偏置高壓器件結構。
  12. The paper is to propose a novel soi high - voltage structure and to design a soi power switch ic based on epitaxial simox substrate for an institute, which will be used on firing controlling system

    本文目的是為某軍工電路研究所設計，應用於某軍工系統研究所的火炮控制系統的soi高壓器件及功率開關集成電路。
  13. Owing to the requirement of big current and high voltage, the design of power devices is the key point in the research on power integrated circuit, and it has directly influenced the development of power integrated circuit

    功率集成電路中的高壓器件由於高壓大電流的性能要求一直是研發功率集成電路中的關鍵和難點，並直接影響著功率集成電路的發展。
  14. The main work of the author includes the drive circuit design, research of high - voltage ldmos device which breakdown voltage is 1000 - 1200v, the drive circuit ? technology design and layout design, technology experiments of device and circuit

    主要工作包括：驅動電路的電路設計；耐壓為1000 1200v的高壓ldmos器件研究；驅動電路的高低壓兼容工藝設計和器件與電路的版圖設計；高壓器件與驅動電路的工藝實驗。
  15. In lately 20 years, many new structures and technologies have been developed. however, the tradeoff of breakdown voltage with specific on - resistance is always being researched. this thesis was supported by the key program of national natural science foundation of china

    近二十年來，眾多學者提出了很多種器件結構和技術，為soi高壓器件的發展做出了貢獻，但是soi的耐壓和導通電阻的折衷問題一直是無法忽略的。
  16. As one of the key device in soi hvic, soi lateral high voltage device has been deeply investigated in this field

    Soi高壓橫向耐壓器件是高壓集成電路的核心和關鍵，受到了國際上眾多學者的關注。
  17. The designs of circuit and electro magnetic compatibility ( emc ) are very important for the high - speed disposal system and the design of high frequency printed circuit is more important. it is described in detail in this article ; for the mixed voltage system, the meet of different voltage chip is very important and it is also described in detail

    對于高速處理系統，電路設計和電磁兼容性（ emc ）的設計很重要，尤其是高頻布線要求更高，本文對此做了比較詳細的介紹;在混合電壓系統中，不同電源電壓器件的介面需進行電壓變換，本文對此也做了詳細的介紹。
  18. We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3

    本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。
  19. When a mutually doped transitional layer is introduced, no matter it is added to the interspace of electron transport layer and hole transport layer or to the interspace of the hole transport layer and hole inject layer, it can reduce the defects of the interface and result in the increase of brightness and the decrease of the operating voltage obviously

    我們在器件中引入了互摻過渡層結構，發現不管在電子傳輸層和空穴傳輸層之間，還是在空穴傳輸層和空穴注入層之間採用這樣的摻雜結構，都能夠有效減少有機層間的界面缺陷態，明顯提高了器件的亮度，降低了器件的工作電壓。
  20. Carrier aggregation on the interface between organic layer and electrodes may screen extra electric field and reduce barrier height for carrier injection. ( 3 ) we utilized oxd as buffer layer in anode and lif in cathode in single layer mehppv pleds. and the efficiency and brightness was doubled. the results implied that aggregation of minority carriers at the interface may the role of blocking layer

    （ 3 ）在單層mehppv器件的陽極引入oxd作為電子阻擋修飾層， lif作為陰極修飾層，利用阻擋少數載流子實現界面電荷積累的方法提高了器件發光亮度和效率，分析了器件電流電壓特性，使器件發光效率和亮度提高了一倍以上。
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