高壓屏蔽 的英文怎麼說

中文拼音 [gāobǐng]
高壓屏蔽 英文
high tension
  • : Ⅰ形容詞1 (從下向上距離大; 離地面遠) tall; high 2 (在一般標準或平均程度之上; 等級在上的) above...
  • : 壓構詞成分。
  • : 屏構詞成分。
  • : Ⅰ動詞(遮擋; 遮蔽; 蒙蔽) cover; block; hide; shelter; spread over Ⅱ名詞(姓氏) a surname
  • 高壓 : 1 (殘酷迫害; 極度壓制) high handed 2 [氣象學] (高氣壓) high pressure3 (高電壓) high tension...
  1. Unscreened high - tension ignition cable assemblies ; general requirements and test methods

    點火電纜組件.一般要求和試驗
  2. Road vehicles - unscreened high - voltage ignition cable assemblies - test methods and general requirements

    道路車輛.非點火電纜組件.試驗方法和一般要求
  3. Road vehicles - unscreened high - voltage ignition cables - general specifications, test methods and requirements

    道路車輛.無點火電纜.總規范試驗方法和要求
  4. In 2004, the company s technology development department has actively and successfully developed the shield - type american - style european - style cable heads, high - low - voltage cable branch cases for load switch busbar coupler system, outdoor ring network cabinets, box - type transformer substations and auxiliary products, which have passed the authentication one after another and been launched into the market in large batches, giving a strong support to the upgrading of the national urban power grids and the construction of key projects ; in 2006, the company has developed the four - splitting and dual - splitting wire and cable box and released to market ; the 2nd half of 2006, over 500kv ultra - high voltage electrical hardware being developed for 2007 market ; four products awarded national patents in 2006

    2004年公司技術開發部積極開發了型美式歐式電纜接頭,負荷開關母線聯接系統的電纜分接箱,戶外環網櫃,箱式變電站及配套產品相繼通過鑒定,大批量投入市場,有力支持國家城網改造與重大工程建設2006年公司又研製出四分流二分流電線電纜分線盒,已投放市場2006年下半年,正在研製開發超500kv及以上電力金具,有望2007年投放市場2006年有六種產品已申請國家專利。
  5. Connectors with assessed quality, for use in d. c., low - frequency analogue and in digital high speed data applications - printed board connectors - detail specification for shielded two - part connectors having a basic grid of 2, 0 mm, fixed part with solder and press - in terminations for printed boards, free part with non - accessible insulation displacement and crimp terminations - part 4 - 107 : printed board connectors with assessed quality - detail specification for shielded two - part connectors havin

    直流低頻模擬和數字速數據用經過質量評定的連接器.印製板連接器.基本網格為2 . 0mm固定部分有印製板用焊接終端和入終端活動部分有不可及絕緣移動終端和接終端的兩件式連接器詳細規范
  6. Good magnet - sheilding quality for multi - plugs it could be easily design multi out - put transformers. acording to different ferric oxide features, ranged from audio frequency to high freqency it could be designed appropriate transformers

    效果特別好,線圈架備有多路插頭,能很容易地設計出多路輸出的變器,根據豐富的鐵氧體材料的不同性能,可以從音頻到頻范圍內,設計出能夠匹配的各種變器。
  7. Based on some discussions on the mathematic model set up for the cathodic protection potential field, a two - dimensional boundary element method ( bem ) is developed, and by using which, a study on the shielding effect resulted from some typical inner structures such as the reinforcing elements and the partition walls with man holes on distribution of potential and current density in the cathodic protection is performed. the investigated parameters which affect the shielding effect in the calculating model include : the height and thickness of the reinforcing elements, the distance between the anode and the reinforcing elements, and the diameter of man hole on the partition walls, and so on

    本文在討論了陰極保護電位場問題的數學模型的基礎上,以二維邊界元法對陰極保護問題中的電位及電流密度分佈進行了模擬計算,重點對船舶載艙中的典型結構如加強筋、人孔等在陰極保護中所產生的效應進行了分析和研究,通過對不同度、厚度的擋板及不同孔徑的帶孔板所產生的效應進行模擬計算,首次得到了一些對實際工程設計具有重要參考意義的見解。
  8. Especially y - ni - 22fe, which have been widely used in industry things such as magnetic record heads, transformers or magnetic shielding materials due to its high permeability, low coercive force and relatively high saturation magnetization

    特別是- ni - 20fe合金,因其較的磁導率、飽和磁化強度、低的矯頑力而廣泛用於磁記錄頭、變器和磁材料等。
  9. The way to shield the back current of foilless diode is analyzed by karat program. the surface flashover is raised from 300kv to 400kv when the shield is added in experiments

    使用karat程序分析了無箔二極體的迴流方法,實驗中發現加環后表面閃絡電從300kv提到了400kv 。
  10. On the research of soi power switch ic, we proposal the devices based on epitaxial simox substrate

    本文同時對基於該結構和槽結構的soi復合結構進行了研究[ 2 - 4 ] 。
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