高密度電流 的英文怎麼說

中文拼音 [gāomìdùdiànliú]
高密度電流 英文
high intensity current
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 高密度 : high density高密度存儲（器） high-density storage; 高密度組裝 high-density assembly
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The high - density hong kong environment is ideal for the use of escalators and travellators. for instance they may be used to cope with large numbers of pedestrians and speed - up long - distance links to railway stations and ferry terminals

    香港的高密度環境很適宜使用扶手電梯及自動行人道，這些設施可應付大量的人流，讓行人快捷地通往鐵路車站或渡輪碼頭。
  2. Experimental investigation of a high emission and intense current electron - beam diode

    高發射電流密度二極體實驗研究
  3. According the key factors we find, we bring forward a new conception : multilevel suppressor and design a new high performance suppressor whose ion - exchange membrane has bigger areas and using three electrodes including one cathode ( anode ) and two anodes ( cathode ), at the same time we fill the suppression compartment with one kind of ion exchange resin which has moderate exchange capacity. according to our experiment ' s results, we find the new type suppressor has quite high working current efficiency and suppressing capacity. in most cases, the suppressor ' s current efficiency is over 90 % ; the suppressor can transform the naoh ( concentration : 200mmol / l, flow rate : i. oml / min, conductance : over 10000 i - i s cm " ) to pure water ( conductance : 8. 9 it s cm in chapter 3, the high performance suppressor is applied in determination some trace - amounts ions in plating solution, sewage. in this chapter, we also have a research on the gradient ion chromatography

    第二章首先以xyz - 1型電化學抑制柱為例，分析了電化學抑制柱的抑制過程得出影響抑制容量的主要因素主要是抑制柱的電流效率和離子交換膜的極限電流密度，因此採用中等交換能力的離子交換樹脂作為抑制室的填料以提高電流效率，在通常情況下電流效率可達到90以上；在選用同種離子交換膜的前提下，可通過增加離子交換膜的有效面積達到提高極限電流的目的從而提高抑制柱的抑制容量，因此提出了多級抑制的概念並據此研製了共電極式高容量電化學抑制柱，該抑制柱最高可將流速為1 . 0ml / min ，濃度為200mmol / l電導率超過10000 s ? cm ~ （ - 1 ）氫氧化鈉溶液抑制為電導率低至8 . 9 s ? cm ~ （ - 1 ）的純水，並且具有穩定性高、分析結果準確等優點。
  4. The processes and characters of synthesis reaction for ni / al and ti / al under the influence of high intensity of pulsating electric current are researched. the characters of organization and structure of products under different parameters such as charge voltage, charge capacitance, pulsating electric current, pulsating amounts and pulsating duration are summarized

    對高密度脈沖電流下ni al 、 ti al的反應特點進行了分析，總結了在不同的充電電壓、充電電容、脈沖電流、脈沖數量、脈沖持續時間等參數下，反應產物的組織與結構特點。
  5. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  6. An arithmetic solution of micro temperature rising velocity of powder sample under the influence of high intensity of pulsating electric current are brought forward

    計算了坯料在高密度脈沖電流作用下粉坯的宏觀溫升。提出了坯料在高密度脈沖電流作用下粉坯微觀溫升的計算方法。
  7. The gap formation process, in the last stages of conduction phase of high density ( 1015 / cm3 ) pegs, is examined by pic simulation. in simulations, evolution plots of plasma and current streamline are used to analyze the mechanism of gap formation

    利用粒子模擬程序，對高密度（ 10 ~ （ 15 ） cm ~ 3 ） peos導通電流最後階段真空鞘層的形成過程進行了模擬研究。
  8. For the purpose of improving precision and practicability of fiber optic gyroscope ( fog ), a current source and a temperature control circuit were designed for driving the light source of fog

    摘要為提高光纖陀螺精度，實現光纖陀螺工程化，設計了高精度恆流源及精密溫控電路，用於光纖陀螺光源驅動。
  9. This thesis is devoted to studying those issues relevant to the interaction of ultra - short ultra - intense laser pulses with overdense plasmas, including the generation and transport of relativistic electron beams, the generation of quasistatic magnetic field, the energetic ions production, and the influence of preplasma on electrons acceleration

    本文的研究目的是：利用粒子模擬方法，對超短超強激光脈沖與高密度等離子體相互作用中高能強電流的產生和輸運、準靜態磁場產生、高能離子產生等物理過程進行研究。
  10. This work studied the preparation process of aluminum coating and the factor of the properties of the aluminum coating such as processing condition, pre - treatment, electroplating system, current density, and current efficiency and electroplating time etc. it is shown that alcl3 + lialh4 organic solution system can be fabricated aluminum coating and processing parameter of having high reflectivity aluminum coating is obtained

    對鋁膜的制備工藝及影響鋁膜性能的因素如工藝條件、預處理過程、電鍍液體系、電流密度、電流效率及電鍍時間等進行了研究，確定了通過alcl _ 3 + lialh _ 4有機溶液體系可用來鍍制鋁膜及獲得高反射率膜的工藝參數。
  11. Fault current limiters would be installed in transmission and distribution systems, especially for electric utilities and large energy users in high - growth, high density areas

    故障電流限制器等將被安裝在輸電及配電系統中，尤其是要安裝在高增長性，高密度區的電力單位和能源大戶。
  12. The high density resisitivity method through electrode power supply, surveys electric current and voltage, gathers apparent resistivity data

    摘要高密度電法通過電極供電、測量電流和電壓，採集視電阻率數據。
  13. All this has laid a strong foundation for selecting a subject of maskless afm nanolithography, i. e., field - induced oxidation of si semiconductor. in chapter two, a high - intensity current between a probe tip and a sample is discussed first. electrical intensity between them is simulated using matlab software after an electrical model is introduced, thus theoretically analyzing the effect of tip radii, tip - sample separation, radii at the sample, and biases on the morphology of field - induced oxidation

    第二章首先討論了掃描探針與樣品之間的高密度電流，得出了電流密度與偏置電壓和探針?樣品間距密切相關，其關系不能以簡單的線性或指數函數來表述的結論；然後引進了掃描探針場致加工的電場模型，利用matlab模擬探針與樣品之間的電場強度，分析了掃描探針加工條件包括探針針尖曲率半徑、探針-樣品間距、樣品平面半徑以及偏置電壓等對場致氧化物幾何形態的影響。
  14. Since the company began to resrerch and make radiators in 80 ' s last century, domestically advanced production lines have been adopted in the production. we sim at 100 % conformity of heat impedance performance curve with the testing standards stipulated in st2564 - 85 standard book of " profiled material raditors " which is promulgated by ministry of electronic industry of people republec of china. the radiators are matching heat - radiating components for power semiconductors, generally can be applied to fields of large and small power appliances, hi heat current density utensils, whole - set apparatus, electuonics and electrical devices, etc

    本公司自八十年代初研製生產散熱器系列產品以來，採用國內最先進的生產流水線，工藝精湛，其熱阻特性曲線均按中華人民共和國電子工業部標準st2564 - 85 《型材散熱器》規定的檢測方法，百分之百達到設計要求，是功率半導體器件的配套散熱元件，運用於多種大、小功率電器熱流高密度、整機設備、電子，電器等領域。
  15. The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is

    透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。
  16. Application of high - density dc electrical method in detection of slope cover and sliding surface

    高密度直流電法在滑坡覆蓋層及滑移面的探測
  17. According to basic theories for distributing regular of electric field about surface single spot current source and high density resistivity prospecting method in this paper. put forward an installation which use one current electrode or dipole current electrodes and the others prospecting at the same time to realize high density resistivity method by office date processing, such as wenner pole - dipole a, wenner pole - dipole b, wenner alpha, wenner beta, wenner gamma and pole - pole array

    摘要運用地面點電流源電場的分佈規律和高密度電阻率法的基本思想，提出了分別利用單極供電、偶極子供電，其餘電極同時測量，通過室內數據整理實現高密度電阻率法的溫納對稱四機、溫納偶極、溫納微分、溫納三極a 、溫極三極b和二極等裝置。
  18. In order to meet demands for faster and more efficient data processing in these applications, it will require aggressive power management. that is to say, it will require special power supply to provide lower voltages with higher currents and fast transient capabilities, whilst high power density, high efficiency, and high reliability is also desired

    為了滿足這些場合對更快、更有效的數據處理的要求，其供電電源的要求也在不斷提高，具體表現在：更低輸出電壓、更高輸出電流、高功率密度、高效率、快動態響應及高可靠性。
  19. Practical study about high critical current intensity in superconductor of y - ba - cu - o compound system

    系超導體高臨界電流密度的實驗研究
  20. A novel patterning technology of fine - pitched carbon nano tubes pixels on photo resists layer has been developed by lift - off process. another new sealing technology named flat panel sealed method in vacuum chamber for fed or other electro - vacuum devices has also been developed. the screen printed carbon nano tube field emission display device fabrication process has been set up and a 2

    建立了一種採用光刻膠作掩模的直接剝離方法，並可獲得高密度線條分佈的碳納米管冷陰極；建立了一種電真空器件的真空原位平面封裝方法；建立了一整套較為完善的碳納米管場發射冷陰極印刷制備及場發射顯示器件制備的工藝流程，並成功獲得2 . 2英寸碳納米管動態顯示原理型樣機。
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