高度摻雜 的英文怎麼說

中文拼音 [gāodùchānzá]
高度摻雜 英文
highly doped
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 高度 : altitudeheightelevation
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. The adulteration of dy3 + n gd3 " 1 " ^ la3 + > sm3 " 1 " can inhance the luminesce efficiency, while bi3 + decreases

    摻雜適量的dy ， gd ， la ， sm可提高磷光體發光效率，而摻bi則使磷光體強度降低。
  2. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  3. The thermoelectric properties of the samples greatly depend on the doping elements and constituent concentration. the sample with la - dopant shows better thermoelectric performances than those with other three dopants. it should be pointed out that there exists an appropriate range of doping values to improve the thermoelectric properties of the samples

    這四種摻雜劑都不同程度的提高了材料的熱電性能，但只有摻la能夠很好的改善材料的性能，而且摻雜量不是越大越好，而是表現出有一個最優摻雜的限度。
  4. We have prepared a series of neodymium binary / ternary complexes, such as nd ( acac ) 3 ' 2h2o, nd ( tfa ) 3 ' 2h2o, nd ( hfa ) 3 ' 2h2o, nd ( dbm ) 3 ' h2o, nd ( acac ) 3phen, nd ( tfa ) 3phen, nd ( hfa ) 3phen, nd ( dbm ) 3phen, nd ( tta ) 3 ( tppo ) 2, nd ( hfa ) 3 ( tppo ) 2, nd ( acac ) 4hpy, nd ( tta ) 4hpy and ndq3. the effects of organic ligands, synergistic coordination agents and different substitution groups for - diketones on effective line width and photoluminescence intensity of neodymium complexes were investigated. the photoluminescence spectra indicate that synergistic coordination agents can shield neodymium ion and impede water molecules penetrating into inner coordination shell to satisfy large coordination number of nd3 + during hydrous synthesis process, so the luminescence intensity of neodymium ternary complexes is stronger than that of neodymium binary complexes

    發光光譜研究表明，由於協同試劑的參與，屏蔽了水分子參與配位，降低了羥基（ oh ）對釹離子激發態能級~ 4f _ （ 3 2 ）的猝滅，三元配合物的熒光強度均比二元配合物強，其中配合物nd （ tta ） _ 3 （ tppo ） _ 2在1340nm處的熒光強度最強，適合作為摻雜的光學活性物質，來制備有源光波導材料；在有水工藝條件下，單純地氟化配體未必能提高釹配合物的近紅外發光性能。
  5. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  6. The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0. 6 at. % )

    除了改進冷卻控溫系統外，選擇摻雜濃度較低的激光晶體，有利於高效散熱，得到更穩定的激光輸出。
  7. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。
  8. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質，而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定性高，在氫等離子體環境中具有很高的化學穩定性，不易導致太陽能電池材料活性降低。
  9. For n - doped tio _ ( 2 ), the forbidden band was divided into two ' s, and the cut - off wavelength and the application of solar energy was increased too

    對于n摻雜tio _ 2薄膜來說，禁帶寬度裂分為兩個「表觀」禁帶寬度，大大提高了截止波長，提高了對光源的利用率。
  10. Two kinds of wo3 powder are prepared by sol - gel method and gas - phase reaction method with tungsten filament, and heater type gas sensors to trimethylamine are made. under different work temperatures, these sensors ’ sensitivities are measured, and the result indicates that wo3 by sol - gel has better gas sensing performance to trimethylamine. at the same time, the wo3 - based gas sensor to trimethylamine can work at low temperature, which

    3 、本課題對不同摻雜的wo3材料進行了研究，發現摻雜3 % pd的wo3基氣敏元件在150ppm三甲胺氣體中，最佳工作溫度僅為85 ，該溫度下元件最高靈敏度可達11 . 7 ，並且元件的靈敏度隨tma濃度的升高而變大，這表明摻雜pd的wo3材料在低溫下對tma氣體有很好的響應。
  11. It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established

    通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。
  12. The hydrogen source used is high purity of 99. 9999 %. for comparison, the annealing treatments were processed under ambient pressure in air and nitrogen atmosphere respectively

    在kno3溶液中進行液相攙雜的納米碳管，其儲氫能力明顯提高，並且隨摻雜濃度增加而提高。
  13. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  14. Below the curie temperature tc the resonance lines spread and shift to lower field

    高摻雜樣品， tc溫度以上的顧磁共振線上低場位置出現鼓包。
  15. The calculation of maximum potential barrier height of donor - doped barium titanate ceramics

    施主摻雜鈦酸鋇陶瓷最大勢壘高度計算
  16. Graded doping is adopted in both sides of the junction ( double graded doping ). this results in a strong ( drift ) electric field throughout the whole active layer. this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased

    漂移場的形成是通過mbe技術，在結的兩側都採用梯度摻雜（即雙梯度摻雜） ，從而在整個有源層都建立起一個強的（漂移）電場，有效地利用載流子在電場作用下的漂移作用收集少數載流子，使得總內量子效率得以提高。
  17. In this design, the double graded doping solar cell accumulates the minority carriers with the drift field, which is located at the whole graded space. this means that the accumulation of minority carriers doesn ’ t depend on the above conditions

    採用與眾不同的通過在p區和n區都採用梯度摻雜這樣一個所謂雙梯度摻雜，在整個有源層獲得高達104v / cm的漂移電場。
  18. Firstly we analyze the requirement of sbd of high frequency for the doping concentration and thickness of the epilayer, for the structure parameter of the device. we design the optimum device parameter based on this. 2

    首先，從理論上分析出高頻肖特基二極體對材料的外延層厚度摻雜濃度的要求，以及其它的器件結構參數要求，以此為依據，設計出最佳的器件參數。
  19. The ion implantation is used to optimize the material. we have discussed effects of the varing doses of er ions on the structural, optical and electrical properties of the cdte films deposited on si substrate

    利用這種技術實現了cdte多晶薄膜稀土離子鉺（ er ） 、鏑（ dy ）的高濃度摻雜改性。
  20. Ytterbium ( yb ) - doped silica fibers have a broad - gain bandwidth ( 850 ~ 1050nm ), excellent power conversion efficiency, and a broad - absorption bandwidth ( 900 ~ 1200nm ). their ability to provide amplification over the very broad wavelength range from ~ 975nm to ~ 1200nm is expected to generate increasing interest in the near future. they offer an almost ideal gain medium for the fiber lasers and fiber amplifiers that work at the wavelength around 1 m

    摻鐿石英光纖具有幾個方面的優點，如能級結構簡單，與摻er3 + 、 nd3 +等稀土離子的光纖相比，不存在對泵浦光或信號光的激發態吸收（ esa ） ，可以有更高的摻雜濃度;有較寬的吸收光譜（ 850 ~ 1050nm ） ，可以利用多種泵浦光源來設計泵浦方案;輻射光譜寬（ 900 ~ 1200nm ） ，激光輸出波長可以有很寬的可調諧范圍。
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