高級晶體管 的英文怎麼說

中文拼音 [gāojíjīngtǐguǎn]
高級晶體管 英文
high level transistor transistor logic
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 級 : Ⅰ名詞1 （等級） level; rank; grade 2 （年級） any of the yearly divisions of a school course; gra...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 高級 : 1 （階段、級別達到一定高度的） senior; high ranking; high level; high; superb; higher; high stage...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the entitative routing stage, the macro - cell layout must be compressed for optimization area and time delay. it should be compared beauty with the routing result by manual. an algorithm, which is gridless, variable widths and minimizing layer permutation, is advanced for channel region

    晶體管級實體布線階段，由於庫單元的復用性，要求庫單元版圖緊湊，即要求單元版圖在滿足各約束條件的前提下面積、性能優化程度較高，能與手工設計的版圖相媲美。
  2. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  4. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。
  5. Miraball is a powerful advertising tool, making use of the persistence of vision. when a row or several rows of ultra brighter wide angle led spins at 2000 - 2200rpm, the built - in cpu commands the led dots light up or go out at a very accurate pre - programmed sequence, the user ' s desired texts and wild miraculously appear and float inside a crystal - like ball to catch all eyes

    二：魔球是一實用新型的消費前沿動態廣告信息的發布媒體，內置微電腦晶元處理經個人電腦預先編輯后存於記憶體內的圖信息后，按非常精確的時序不斷點亮和熄滅，在一列或數更高速旋轉廣角發光二級管列陣中特定的點，在人眼視覺暫留作用下，用戶想要的圖文就會神奇地浮現在球體內360度的視覺空間中。
  6. Based on many other circuit formats, a new kind of logic - level circuit representation, called unified middle - level circuit format ( umcf ), is defined in this paper, in which some special operations on circuit related with power estimation and low power design. umcf can not only interchange circuits of different formats, but also convert circuits to hspice acceptable files, which can be used for transistor level power estimation

    本文結合多種不同的電路格式，自主定義了一種邏輯級電路的中間表示形式（稱為umcf ）和一系列極具特色的與低功耗技術相關的操作，它不但可以實現與其他多種電路格式之間的相互轉換，還可以將電路直接轉換成hspice可以接受的文件，進行晶體管級的電路功耗估計，這樣可以在公認的高精度的功耗模擬器上，對本文的結果進行有效的驗證。
  7. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  8. The intelligent control of the crystal growth is implemented in the process control level with higher control accuracy and the dynamic data display, automatic event alarm, log printout, on - line information look up and security limit detection are iraplemented in the control nangement level

    過程式控制制級實現了晶體生長的智能控制，控溫精度較高；控制管理級實現了數據動態顯示、事故自動報警、定時報表列印、在線信息查詢和安全權限檢查等功能。
  9. The effect of a few important geometrical and physical parameters which include the length of the active region, the thickness of the active region, bulk traps, interface traps, on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici

    摘要利用高級二維器件模擬程序medici分析了多晶矽薄膜晶體管有源區的長度、體內陷阱、界面陷阱、柵氧化層厚度等幾何參數及物理參數，並研究了這些參數對薄膜晶體管特性的影響。
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