高能離子注入 的英文怎麼說

中文拼音 [gāonénglízizhùrù]
高能離子注入 英文
high energy ion implantation
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 能 : 能名詞（姓氏） a surname
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 高能 : high energy高能等離子體 energetic plasma; 高能點火 [航空] high energy ignition; 高能電池（組） hi...
  • 離子 : [物理學] ion
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  2. The 3t3 mouse fibroblasts and human endothelial cells cultured on the surface of the implanted pp showed much better attachment and proliferation than that for controlled pp. at the same time, the cooft ion implantation also exhibited low macrophage attachment with normal cellular morphology. the above results can cause positive effects on the biocompa tibility when it is used as implant material

    研究表明，離子注入后聚丙烯表面的親水性和血液相容性研究表明，通過對pp表面進行cooh ~ +離子注入處理，可以降低其表面能和水接觸角，提高其抗凝血性能和抗鈣化性能，並且pp的抗凝血性能與cooh ~ +離子的注入劑量具有很大的相關性。
  3. The questions the researcher concerned are which system will be chosen and how to obtain the good lithium ionic conductor materials, which is the basic departure of the paper. the addition of second phase in composite can change the interface structure and the conduction mechanism, improve the matrix conductivity and other function such as the sintering, crisping and so on, so the research of composites are an interesting field of the ionic conductors. the synthesis of lithium ionic conductor is often by solid state reaction, but this method needs high temperature and leads to the volatility of lithium which not only causes the drift of the compounds but gets the no well - distributed materials

    研究者所關注的問題是選擇新的體系進行研究，以期得到性能更好的鋰離子導體材料，這也正是本論文的基本出發點；復合離子導體中第二相的加入改善了基質的界面結構和導電機制，不僅可以提高基質材料的電導率，還可以在一定程度上改善材料的其它性能，如燒結性能、脆性和機械強度等。因此復合材料的研究是離子導體一個有廣闊前景的發展方向；合成鋰離子導體，特別是成分復雜的體系以傳統的固相合成法為主，但這種方法需要較高的溫度，容易引起鋰的揮發，從而造成產物組成的偏移，而且不易得到顯微結構均勻的材料。
  4. The authors present the review on dry sliding friction and wear behaviour of particle reinforced aluminum matrix composites in recent years, including friction behaviours, wear mechanisms and applications of these composites

    離子注入是一種新興的束流表面強化技術，離子注入陶瓷材料可使其表面的力學性能如斷裂韌度、硬度、彎曲強度、摩擦學性能等得到改善，它為解決結構陶瓷韌性不足、摩擦磨損率較高等問題開辟了新的技術途徑。
  5. Ion beam processing improved on chemical and physical properties such as conductivity, surface hardness and wear resistance

    聚合物材料經高能離子注入后其電導率、表面硬度、耐磨性等性能都得到了提高。
  6. Nowadays, separation by implantation of oxygen ( simox ) and smart - cut are two major methods to commercially supply soi wafers, but these soi wafers are much expensive than si wafers due to the long time ion implantation required for the high dosage ( 1017 - 10l8cm - 2 ) by conventional beam - line ion implanters, which, to some extent, embarrasses its widespread adoption in mainstream microelectronic products

    目前制約soi技術商業應用的重要因素之一是soi圓片過低的產量和過高的價格，主要原因是使用傳統線掃描式離子注入機需要很長時間才能達到所需的注入劑量（ 10 ~ （ 17 ） 10 ~ （ 18 ） cm ~ （ - 2 ） ） 。
  7. We also studied pld derived ba0. 8sro0. 2tio3 thin film capacitor for the application of dram

    採用組合集成離子注入的方法摻bi提高了bst薄膜的介電性能。
  8. Implanted b ion in the pyc interphase came into being b4c, and reacted with oxygen and sodium sulfate producing b2o3

    預測了b離子注入pyc界面相后，經高溫處理生成的碳化硼能夠和氧、硫酸鈉反應生成氧化硼。
  9. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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