高能電子 的英文怎麼說

中文拼音 [gāonéngdiànzi]
高能電子 英文
high energy electron; hard electron高能電子聚束（加速）器 rebatron; 高能電子衍射 high-energy electron diffraction （heed）
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 能 : 能名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 高能 : high energy高能等離子體 energetic plasma; 高能點火 [航空] high energy ignition; 高能電池（組） hi...
  • 電子 : [物理學] [電學] electron
  1. Cosmic rays and x-rays produce energetic electrons by ionization.

    宇宙射線和X射線因其電離作用產生高能電子。
  2. Cosmic rays and x - rays produce energetic electrons by ionization

    宇宙射線和x射線因其電離作用產生高能電子。
  3. Studies on the optimum beam orbit correction for high energy electron linacs

    高能電子直線加速器束流軌道校正的優化研究
  4. In successive steps, a high-energy electron creates a shower.

    在級聯的情況下，高能電子可以引起簇射。
  5. The influence of field on output factor when the jaws are unfixed

    放療用高能電子束光欄不固定限束方式下照射野大小對輸出量的影響
  6. The epitaxial growths of ingaas / gaas / algaas fundamental material and the fabrication of 45 - deflector are extensively studied in our work. some measuring methods are used to evaluate the growth quality of our grown structure by pl, cv, x - ray double crystal diffraction, sem etc. property analysis are provided for it

    利用高能電子衍射、電化學c - v 、掃描電鏡（ sem ） 、 x射線雙晶衍射儀、光熒光譜儀（ pl ） 、原子力顯微鏡等多種方法對制備的器件進行了檢測，同時對實驗結果進行了必要的分析。
  7. Absorbed dose determination in photon and electron beams

    光子和高能電子束吸收劑量測定方法
  8. The absorbed light energy excites chlorophyll a molecules, causing them to emit high - energy electrons that pass down an electron - transport chain, releasing energy to synthesize atp ( photophosphorylation ) and nadph

    吸收的光能可激發葉綠素a產生高能電子，經電子傳遞鏈傳遞后，釋放能量合成atp （光合磷酸化）和nadph 。
  9. The generation of energetic ions during the interaction of a linear - polarized ultra - short ultra - intense laser pulse with solid targets are examined by particle simulation. three energetic ion populations are observed and the acceleration mechanisms are analyzed, respectively. the first population is pulled out from the target by the electron jet in front of the target

    模擬觀察到三群高能離子的產生，並對其加速機制一一進行了分析:在靶的前部，向外噴射的高能電子在靶前形成電子云，將一部分離子拉出靶面，形成第一群高能離子;激光驅動大量高能電子向靶內輸運，這些電子牽引靶前部的離子向前加速，形成第二群高能離子:高能電子很快穿透靶，在靶后形成電子云，加速靶后表面處的離子，形成第三群高能離子。
  10. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  11. X-rays were produced when energetic electrons hit a solid object.

    X射線是在高能電子擊中固體靶時產生的。
  12. A high-energy electron which penetrates into the metal atom may dislodge one of the inner electrons of that atom.

    一個穿入金屬原子的高能電子可以逐出該金屬原子的一個內層電子。
  13. Reflection high energy electron diffraction method

    反射高能電子繞射法
  14. Dosimetry of electron beam central axis percent depth dose

    高能電子線射野中心軸百分深度劑量測定
  15. X - rays were produced when energetic electrons hit a solid object

    X射線是在高能電子擊中固體靶時產生的。
  16. High electron energy diffractometer hee

    高能電子衍射儀
  17. Effects of oxygen pressure on microstructure of lno conductive thin film has been studied by in situ reflection high energy diffraction ( rheed ) and ex situ x - ray photoelectron spectroscopy ( xps ). in the relatively low oxygen pressure, lno film displays spotty rheed pattern

    首先，通過原位高能電子衍射（ rheed ）及x光電子能譜（ xps ）研究了氧分壓對lno導電薄膜微結構的影響，並進一步提出了氧分壓對lno薄膜微結構的影響的機理。
  18. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  19. Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed

    本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。
  20. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
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