高阻厚層 的英文怎麼說
中文拼音 [gāozǔhòucéng]
高阻厚層
英文
thickresistivebed-
Established in 1987, jinming is one of the leading providers of film extrusion process machines and blow molding machines, is well known as the biggest plastic machine manufacturer of 20m width three - layer coextrusion blown film line in asia and the first supplier of seven - layer coextrusion high barrier blown film line and five - layer coextrusion non - pvc infusion bag blown film line
成立於1987年,是國內知名的薄膜擠出加工裝備和中空吹塑成型設備供應商之一,具有雄厚的研發和製造實力,設計製造的兩臺20米幅寬三層共擠薄膜吹塑機組是迄今為止亞洲第一、世界第二的薄膜吹塑機組,並且在國內首家推出七層共擠高阻隔薄膜吹塑機組和五層共擠輸液袋膜專用吹塑機組。Our current restraint - incentive scheme for top managers in state - owned enterprises wears a strong flavour of planned economy, which fails to meet the request of marketing economy. this incorrespondence blocks the striding of the production capacity of the enterprises and also results in the loss of state - owned capitals
我國現行的國有企業高層管理人員約束與激勵機制帶有濃厚的計劃經濟色彩,與市場經濟的要求嚴重不符,這不僅阻礙了國有企業效率的提高和進一步發展,還造成了國有資產的流失,所以國有企業高層管理人員約束與激勵問題是一個急待解決的問題。Three - dimensionally braided structural composites have distinct structure that is fully integrated, continuously spatial fiber - network impregnated with ductile material. the new innovative materials have not plies as conventional composites have, and put an end once and all to low interlaminar strength showing in laminate materials. because of their enhanced stiffness and strength in the thickness direction, near - net - shape design and manufacturing, superior damage tolerance and specified aerospace function, the braided composites are gaining more and more attention of industry and academia
三維編織結構復合材料是完全整體、連續、多向的紡線(纖維束)的網路,充填以延性材料,這類新材料已失去通常復合材料的層合板概念,由此,層合板復合材料層間脆弱的致命弱點在編織結構復合材料中得到克服,所以編織結構復合材料具有高的強度和剛度(包括在厚度方向) ,接近實際形狀的製造,高的沖擊韌性、高的損傷阻抗,和按實際設計要求的特定的航空航天方面的使用功能,因而廣泛地受到工業界和學術界的關注。In the lclv, the most important parameter, switching ratio of the lclv, is analyzed. it is mainly influenced by the dark - conductivity, ratio of light - to dark - conductivity, thickness of the photoconductor and the thickness of the liquid crystal. it is concluded that the switching ratio can be improved by matching the thickness of the liquid crystal and the photoconductpr, and the proper change region of the light conductivity of the photoconductor
在電學匹配方面,我們對光電導材料的暗態電阻、亮暗電導比、厚度以及液晶的厚度等對光閥開關比的影響進行了分析,認為液晶光閥開關能力的提高很大程度上取決于光電導層和液晶層的厚度匹配,以及光電導層的電導變化的區域位置。The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer
模擬結果表明,擊穿電壓與導通電阻存在明顯折衷關系,因此在選擇器件結構時要選擇埋氧層厚度大,漂移區濃度高,在保證擊穿發生在縱向的情況下,漂移區長度越小越好。On the base of the development of thick film pastes technology, ru - based thick film resistor pastes have been studied due to select conductive phase and inorganic binder. state - of - the - art techniques such as rolling, screen printing and sintering were used for sample preparation. effects of ingredients, printing parameters and sintering parameters, microstructure on the properties of thick film resistor ( trf ) have been analyzed with xrd, sem, dsc and electrical tests
本文在跟蹤國內外厚膜漿料技術發展的基礎上,以釕酸鉍/銀系厚膜電阻漿料為研究對象,通過選用合適的功能相和無機粘結相成分,以三輥軋制、絲網印刷和高溫燒結等制備工藝為技術特徵,採用xrd 、 sem 、 dsc等分析方法和電性能測試手段,系統的研究了漿料中各相的成分配比、制備工藝參數,以及膜層微觀結構對厚膜電阻性能的影響規律。Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面:首次採用硅( 100 )襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子,通過退火處理成功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )劑量的氧離子,隨后在氧化層的保護下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,分析了其原因是ge揮發( ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛)和ge擴散( ge穿過離子注入形成的氧化埋層而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路,二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分,從而部分解決sigeThe experiments show that the main origins of causing the oil and water zones complicated in the study area on the one hand is pore structure, fine particle size and shale content high, resulting in saturation of irreducible water of the reservoirs varying greatly, on the other hand is mud invasion influence, resulting in the reservoir receptivity decreasing, and the third is the thin bed is restricted by logging resolution, resulting in measure value influenced by the bed thickness
研究得出,研究區復雜油水層主要成因一是儲層孔隙結構復雜,巖性細,泥質含量高,導致儲層束縛水飽和度變化大;二是泥漿侵入影響,導致油層電阻率降低;三是薄層受測井分辨能力的限制,其測量值受層厚影響。Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large
但長期以來,由於薄硅外延生長技術的限制,無法生長出優質的厚度小於2 m的薄硅外延層,使硅肖特基二極體的串聯電阻無法降的更低,限制了其截止頻率的提高。The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下:首先,研究了vcsel的熱場特性,分析了電流擴展,材料參數和工作條件對于溫度分佈的影響;其次,從電極電壓入手,計算出激光器中的等勢線分佈,並對不同深度處的電壓和電流分佈進行比較,研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響;再次,實現了電、光、熱耦合,求出了閾值電壓,計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈,分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響;最後,給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈,分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。The comprehensive geological characteristic has been fully studied in this paper. on the basis of this, closely combining production practice, the favorable gas developing regions have been determined with the methods of sedimentary facies and combination of generation, reservoir and caprock, and logging parameters interpretation maps and regression formulas have been established with logging data, as well as reprocessing, interpretation and identification of gas reservoir have been done with computer. integrating the information and results of geology, logging, testing and geophysics, the gas reservoir distribution regularity of structure of no. 1 sebei has been described and reserves in place of no. 1 ' sebei gas field have been recalculated, which have provided a basis for next step of development in research area
在近十多年,通過提高地震資料處理精度、淡水聚合物泥漿的應用、數字測井技術的運用、並加強了低電阻層和差物性層的試氣及氣田擴邊鉆探,大大提高了對氣層的識別,大量增加了氣層的層數和厚度,擴大了氣田的含氣面積,使氣田儲量通過多次復查核算仍在不斷增加本論文充分研究了青海澀北一號氣田天然氣地質綜合特徵,並以此為基礎緊密結合生產實踐,應用沉積相與生儲蓋組合等方法確定氣藏有利發育區帶,應用測井資料建立測井參數解釋圖版並回歸公式,應用計算機重新處理、解釋和識別氣層,綜合地質、測井、試井、物探等多方面信息與成果,描述了澀北一號構造的氣層分佈規律,重新計算了澀北一號氣田的地質儲量,為研究區下一步開發提供了依據。Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively
其次,由於一直以來藍光oled器件的研究處于相對落後的狀態,其發光亮度、效率、穩定性和色純度都無法綠光器件相比,所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 )研究了雙異質型藍光oled器件,由於本研究引入了空穴阻擋層,使得載流子的復合和激子的擴散被限定在發光層內,器件的發光效率達到了1 . 90lm / w ,最大亮度達到了10000cd / m2 ,比傳統結構器件的效率和亮度提高了約一個數量級; 2 )制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件,研究發現,當改變各有機層厚度時,器件的電致發光光譜發生了從綠光到藍光的移動。Since frosting is inevitable so long as some physical factors are satisfied, it will enlarge the resistance of airflow, cut down the airflow rate of air cooler and reduce the coefficient of heat transfer. in order to keep the refrigeration system run smoothly, frost must be removed
結霜只要滿足一定的物理條件就是不可避免的,霜層增厚增加了空氣的流動阻力,冷風機盤管流量減少,同時霜層增厚也會導致傳熱系數下降,因此為保持系統高效運行,除霜是必須的。In order to suppress the formation of silicide interfacial layer, a zro2 thin film was deposited as a barrier layer between hfo2 and si. the samples with barrier layer exhibited better leakage and c - v character than the directly deposited ones
作為阻擋層抑制hf和a的互擴散反應,減小了界面層厚度,並提高了界面層的氧化效率,與無阻檔層的樣品相比電學性能得到了顯著的提高。分享友人