algan 中文意思是什麼

algan 解釋
阿爾甘
  1. Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy

    生長的跨導為186
  2. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  3. Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields

    Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。
  4. For the first time, we reported the barrier height of au / algan is 1. 08ev by analysis on various i - v curves under corresponding temperatures. 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation

    3 、採用金屬鎵層氮化技術，利用我們自行改造的熱蒸發設備和氨氣氮化設備，在無定形石英襯底上生長出具有擇優取向的多晶gan ，取得了一些階段性的成果。
  5. By the use of iteration method to solve schrodinger - poisson equations when algan barrier layer doped about 1 1018cm - 3, the max sheet density of 2deg is 1 1012cm - 2 and the thickness of 2deg is increasing from 15nm to 40nm with barrier ’ s thickness increasing

    採用迭代法求解schrodinger - poisson方程，當algan勢壘層摻雜濃度為1 1018cm - 3時，二維電子氣濃度最高可達1 1012cm - 2 ，並且二維電子氣薄層厚度隨著勢壘層厚度的增加從15nm增加到40nm 。
  6. Optimized layers design for algan gan ingan symmetrical separate confinement heterojunction multi - quantum well laser diode

    對稱分別限制多量子阱激光器的優化設計
  7. In this thesis, the basic characteristics of algan / gan heterojuntion have been analyzed. then fabrication of algan / gan hemt and current collapse are investigated. ti / al / ni / au ohmic contact to low doping gan film is studied

    本文以所制得hemt樣品為研究對象，在分析其異質結特性的基礎上，對電流崩塌效應機理作了探索性研究。
  8. The contact resistance reduces to the minimum level of 6. 6 10 - 6. cm2 after annealing for 1min at 900 ; the deposition of ni / au on algan is demonstrated for a good schottky contact performance, the leakage current is at a low level of 10 - 8a

    首先，極化效應是iii - n化合物異于其他iii - v化合物的最大特徵，因此對algan / gan異質結極化效應進行了分析。
  9. Two - dimensional static numerical modeling and simulation of algan gan hemt

    二維靜態模型與模擬
  10. 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively

    2 、利用ti al雙層電極作歐姆接觸， au電極作肖特基接觸，製造出algan基肖特基二極體原型器件。
  11. Influence of polarizations and doping in algan barrier on the two - dimensional electron - gas in algan gan heterostruture

    異質結構中極化與勢壘層摻雜對二維電子氣的影響
  12. The main result is ( 9 ) let n be a nest on a hilbert space h, and u be a weakly closed algan - module

    ） u ，使得，並且作為該結果的應用，得到了任一運算元到u的距離公式。
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