amorphous matrix 中文意思是什麼
amorphous matrix
解釋
無定形基體-
The nano - crystals of si are found embedded in the amorphous matrix in the unannealed sample. the crystallinity of the films is increased with raising deposit temperature
研究發現，未經退火處理的薄膜是納米硅品粒鑲嵌于非晶介質中，並與氧化硅晶粒形成復合的特殊結構。 -
Then, by annealing, the si / sic / sich nano - composite films are prepared. the influence of the post - heating on the microstructure of the films has systematically been studied by the means of the measurements of hrem. the nano - crystals are found embedded in the amorphous matrix in the unannealed sample and the crystallinity is not high
以硅烷和乙烯為原料氣採用常壓化學氣相沉積制備得到si / sic復合薄膜，並使用退火處理方法對該薄膜進行后處理，最終得到si / sic / slo ：納米鑲嵌復合薄膜。 -
The result shows that with the addition of rare earth elements, ultrasonic irradiation and magnetic field, the chemical component, surface configuration, microstructure and properties of electroless co - ni - b and co - fe - b alloy changes remarkably. such kind of change can be described as the followings. firstly the depositing speed of electroless alloy bath is raised while the polarizability and cathodic overpotential are reduced ; secondly the surface quality of the alloy coating and adhesion of the coating and matrix are improved ; thirdly in the coatings the content of the elements in the transient group increases, but the content of cobalt decreased ; fourthly the amorphous structure is transformed to microcrystal structure and polycrystal structure ; fifthly the microhardness and wear resistance of the coating are enhanced ; sixthly coercitive force is reduced, and magnetoconductivity of the coating is increased ; lastly the magnetic intensity of the coating increases with the addition of energy and light rare earth elements such as ce, la and decreases with the addition of heavy rare earth elements such as y. on the other side, when the alloy coatings passes through the heat treatment under the temperature of 250 or 500, their properties will change
結果顯示化學沉積co - ni - b 、 co - fe - b工藝在稀土元素（ ce 、 la 、 y 、 dy ） 、能量（超聲波、磁場）介入后，沉積過程、合金成分、鍍層形貌結構和性能都有顯著變化，表現在：鍍液的陰極極化過電位和極化度降低，沉積速度提高；鍍層的結合力、表面質量改善；鍍層中過渡族元素的含量增加，輕元素硼的含量降低，同時證實了稀土元素與過渡族元素共沉積的可能性；鍍層的顯微結構由非晶態向微晶和多晶態轉變；鍍層的顯微硬度與耐磨性提高，力學性能優化；鍍層的矯頑力降低；磁導率提高；鍍層的磁化強度在能量（超聲波、磁場）和輕稀土元素ce 、 la介入后提高，重稀土元素y介入后降低。 -
And pbo single crystal nanowire was successfully prepared with new method. the results show that the amorphous matrix of the powders almost completely transforms into crystalline perovskite phase after 600 calcinations. the mean grain size in pt / tb powder is about 23nm that is smaller than that of pt powders
鈣鈦礦相的晶軸比c / a比未摻tb的pt粉末低，具有贗立方結構的特性，降低了從立方相向這種四方相轉化的勢壘，從而有效地抑制了較高溫下焦綠石相的產生。 -
For the crystalline polymer matrix, the ptc transition temperature is close to the melting point, while for the amorphous polymer matrix, the ptc transition temperature is close to the glass transition temperature
Ptc轉變溫度與體積膨脹的轉變溫度非常一致，對于結晶聚合物基體體系， ptc轉變溫度在基體的熔點附近，而對于非晶聚合物基體體系， ptc轉變溫度在基體的玻璃化轉變溫度附近。 -
When deposit temperature is raised from 450 to 500, the size of nano - crystals is increased from l ~ 4nm to 5nm. a few 8162 nano - crystals are also found, which are derived from the amorphous oxide in the matrix. simultaneity, some special patterns appear while nano - crystals move and rearrange
薄膜中的結晶程度隨沉積溫度的升高而提高，納米硅晶粒的尺寸由450時的1 4nm增大到5nm以上，氧化程度也隨之加深，非晶介質中的氧化物逐漸向氧化硅的晶態轉變，同時納米顆粒在晶粒遷移和重排過程中局部形成特殊形貌的團聚物。 -
On the basis of plenty of relative references about conductive composites of polymer matrix / carbon black. a new idea has been put forward for conductive composites, that is, by adding organic crystals into amorphous pu matrix ( coating ) without ptc effect to prepare coatings with ptc effect
本文在查閱大量國內外有關聚合物cbptc導電復合材料文獻資料的基礎上，提出向無ptc效應的非結晶性聚氨酯（ pu ）塗料基體中加入有機晶體以獲得具有ptc效應的塗料的設想。 -
As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence
這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
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