annealed structure 中文意思是什麼
annealed structure
解釋
退火組織-
Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )
當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。 -
Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement
再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。 -
The explosive welding specimen were also annealed in vacuum at various elevated temperature from 1000 to 1300. optic microscope, sem, tem and eds ( electron diffraction scattering ) techniques are applied to observe the microstructure and the element profiles of the welding interface and the interdiffused layer, reveal the interdiffused performance of alloy elements at elevated temperature, and analyze the structure and composition of the precipitated phases. moreover, the tensile strength of welding line with the two different techniques and various welding parameters were carried out
採用金相、掃描電鏡、透射電鏡、能譜等多種實驗手段對焊接結合層的微觀組織結構、高溫下nb - 1zr與不銹鋼合金元素的互擴散行為，形成的互擴散層的成分、金相組織和擴散層中的析出相的相組成和相結構等，都進行了較為詳細的分析，並且對在不同工藝、不同焊接參數下焊接的nb - 1zr合金和不銹鋼的焊縫做了強度實驗研究。 -
X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming
研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。 -
At the s ame time, an exceptional structure has been found in the sample annealed for one hour at 800. it appears the single crystal lattice irradiated by high - energy electron beam within a few seconds and then becomes amorphous structure quickly
同時在800退火1小時的薄膜中發現一種異常結構，在短時間高能電子束照射下呈現明晰的單晶衍射斑點，但時間一長，非晶化現象嚴重。 -
The results show the grain size becomes larger along with elevated temperature and the grain size in interconnects does not change evidently after annealed at 200 ? because of the effect of the trench structure
結果顯示熱處理后銅膜晶粒長大，但銅互連線薄膜由於溝槽結構對晶粒的長大有阻礙作用。利用xrd和ebsd測試方法對銅膜及銅互連線薄膜的織構進行評價。 -
The sandwiched films with the structure of 2. 5um / 2um / 2um and 2u m / 2um / 2 u m have been prepared by covered - module method. gmi effect will be studied in deposited and annealed samples with variation of magnetic field, driving frequency and current
用掩膜法制備了每層厚度為2 m和2 . 6 m的三明治膜，將研究退火前後樣品的gmi效應，包括隨磁場、驅動頻率、交流幅值的變化。 -
Study on structure and texture of hot - galvanized layer of cold - rolled sheet and cold - rolled annealed sheet using if steel
鋼冷軋板和冷軋退火板熱鍍鋅層組織和織構的研究 -
In this paper, multilayered pt / bst / pt thin film capacitors were fabricated by the sol - gel process. both the reverse and forward leakage currents of the pt / bst / pt capacitors were reduced several orders of magnitude by employing this multilayered structure with top and bottom layers annealed at low temperatures during the sol - gel deposition of bst films
本文採用溶膠-凝膠法，通過降低最底層和最上層的退火溫度，在pt ti sio _ 2 si襯底上制備了非晶多晶型bst多層膜，不僅改善了正向漏電流特性，而且也改善了反向漏電流特性。
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