annealing box 中文意思是什麼
-
The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。 -
Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness
獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。 -
Anode annealing box
陽極退火箱
分享友人