annealing effect 中文意思是什麼
annealing effect
解釋
熱處理效應-
In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。 -
A satificatory effect is obtained by rime annealing
採用再結晶退火工藝處理，可取得滿意效果。 -
Zircaloy - 4 sheet, which was cold - worked followed by recrystallization annealing, exhibits longer lcf life in the rolling direction than that in the transverse direction, and the fact that difference in lcf life between both directions becomes larger as the range of plastic strain becomes lower can be attributed to the texture effect, p - solution treatment deteriorates the alloy ' s lcf property because the treatment lowers the average value of alloy ' s schmid factors, and the subsequent annealing - treatment in a - phase range has a impact on the lcf properties, i. e. the subsequent annealing - treatment at 500 ? for 1. 5h results in better property than that at 750 for 1. 5h, which comes mainly from the fact that the alloy annealled at 500 for 1. 5h has lower amount of the precipitate particles than the alloy annealled at 750 for 1. 5h
對于冷加工后經再結晶退火處理的zr - 4合金，軋制方向的低周疲勞壽命比橫向要大。隨著_ p的降低，兩個方向的低周疲勞壽命的差別相應增加，這是由於合金中存在織構的緣故。冷加工后經再結晶退火處理的zr - 4合金在固溶處理后，抗疲勞性能明顯降低，這主要是由於固溶處理降低了合金的schmid因子；固溶處理后在相區的退火對疲勞性能有影響，即500 1 . 5h退火的抗疲勞性能要優於750 1 . 5h退火，這主要與500 1 . 5h退火的合金中沉澱相粒子的數量較少有關。 -
Effect of intermediate annealing on cubic texture of high - purity aluminum foils
中間退火對高純鋁箔立方織構的影響 -
Effect of annealing temperature on the properties of nickel oxide thin films prepared by sol - gel dip coating
凝膠法制備的氧化鎳薄膜的影響 -
Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation
結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。 -
Influence of annealing conditions on stress impedance effect of fecunbsib amorphous alloy strip
非晶帶材應力阻抗效應的影響 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
The effect of annealing temperature, concentration, doped cobalt and the content of catalyzer on the capacities properties of pseudo - capacitor is studied. the results show that the specific capacitance enhances by supercritical drying and it is about 262f / g in 1mol / l aqueous koh
結果發現：超臨界乾燥將有效提高電極比電容量；以1mol / l的koh溶液為電解液所得電容比容量可達262f / g 。 -
The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491
通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。 -
In the first step, effect of the target ' s components on properties of thin films was investigated. influences of tl2o partial pressure and thallination temperature on the component phases and properties of tl2ba2cacu2o8 hts thin films were studied in the second step of ex situ post annealing treatments
在濺射沉積前驅物薄膜的過程中，研究了靶材成分對薄膜性能的影響；鉈化后處理過程中，研究了tl2o分壓和鉈化溫度對tl2ba2cacu2o8高溫超導薄膜相組成及其性能的影響。 -
Tungsten oxide and nickel oxide films were prepared by electron beam evaporation method, and the effect of annealing techniques of the electrochromic properties of these films was discussed
本論文利用電子束蒸發方法制備氧化鎢、氧化鎳薄膜的基礎上，研究了熱處理工藝對于薄膜電致變色性能的影響。 -
Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
（ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。 -
Secondly, the character of carbon and the effect of carbon on the oxygen deposition in annealing are studied
其次，研究了太陽電池用矽片中碳的熱行為以及熱處理過程中碳對矽片中氧沉澱和少子壽命的影響。 -
The effect of final annealing on cube texture of high - purity aluminum foils
成品退火對高純鋁箔立方織構的影響 -
The effect of middle annealing on cube texture of high - purity aluminum foils
中間退火對高純鋁箔立方織構的影響 -
Wu ping, wang fengping, qiu hong, pan liqing, tian yue : effect of substrate temperature and annealing on the anisotropic magnetoresistive property of nife films, rare metals, 22 ( 3 ) ( 2003 ) 202 - 205
王鳳平，劉還平，吳平，潘禮慶，邱宏，田躍，羅勝：基片溫度對坡莫合金薄膜結構和磁電阻的影響，發光學報， 24 （ 4 ） （ 2003 ） 435 - 437 。 -
The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated
摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。 -
Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing
經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。 -
Valence variation and annealing effect in vo2 thin films during y - ray irradiation
輻照過程的變價和退火現象
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