band structure 中文意思是什麼

band structure 解釋
帶狀組織
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  • structure : n. 1. 構造，結構；組織；石理，石紋。2. 建造物。3. 【化學】化學結構。4. 【心理學】（直接經驗中顯現的）結構性，整體性；整體結構。adj. -d ,-less adj.
  1. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  2. Consequently, the energy band structure and the densities of state were researched. secondly, vas - cdgeas2 and ge / as - cdgeas2 were upbuilded

    用紅外光譜儀在中紅外區做吸收檢測，結果顯示晶體在中紅外區的吸收較低。
  3. Electromagnetic stop band structure is one of these structures

    電磁阻帶結構就其中之一。
  4. The methods of solid band structure calculation

    固體能帶計算方法
  5. Stir cylinder liner for the band structure, mixer body is long life

    攪拌筒為帶襯板結構，攪拌機架體使用壽命長。
  6. In the band structure, one band that is completely filled with electrons is termed valence band

    在能帶結構中，完全填滿電子的帶被稱為價帶。
  7. Analysis on photocatalytic activity and surface energy band structure of ag, nd tio2 nanometer materials

    2納米材料光催化活性及其表面能帶結構分析
  8. In the first part of the paper, the explicit form of difference equation and periodic boundary condition is derived in cartesian coordinate system. secondly, the dispersive characteristic is analyzed in cylinder coordinate system for many high power microwave devices use cylinder sws. and then the method is extended to calculate the band structure of 2 - d photonic crystal, a modified yee ’ s grid is introduced to calculate the dispersive characteristic in the case of triangular lattice, so that both square lattice and triangular lattice cases can be solved in cartesian coordinate system

    周期電磁結構的一個重要應用就是用作高功率微波器件中的慢波系統，考慮到目前大部分高功率微波器件的慢波系統多採用圓柱周期結構，在論文第四章中，在圓柱坐標系下，給出了差分方程和周期性邊界條件的具體形式，同時編寫程序，分析了milosws ，盤荷慢波結構的色散特性。
  9. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  10. Lastly, we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition, procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature

    最後利用格林函數方法討論了光格子中超冷原子的能帶結構，根據mott相存在能隙的判據我們在平均場近似下重新得到superfluid - mott相變條件，該結論與相關文獻一致。
  11. In each case, we present the surface band structure together with the projected bulk band of both ideal and reconstruction surface respectively, the number of the surface states is determined, and the localized surface features and orbital properties of this surface states along the high symmetry lines in the 2d sbz are discussed

    根據電子數目規則，我們斷定處在一o . lev ~ 0 . lev的表面態為全部填滿的陰離子懸掛鍵態或者為原子再構后引起的as一asdimer鍵態，而處在1 . 4ev一1 . 6ev的表面態為陽離子空的懸掛鍵態。
  12. After some band structure analysis with the fast method, some interesting results are found for a 2d photonic crystal formed by a rectangular lattice of dielectric material gaas ( e = 11. 4 ) and air

    對一種長方晶格結構的光子晶體，通過反復調節介質柱的長、寬和晶格的長、寬，得到該結構最大絕對禁帶寬度= 0 。
  13. Two - dimensional acrylic / air sonic band structure with square lattice is considered in the numerical example

    本文以平面波展開法分析壓克力?空氣聲子晶體聲波全頻溝之現象。
  14. This course has a three part group project assignment which covers the ( 1 ) physical structure, ( 2 ) the phonon spectra, and the ( 3 ) band structure of a semiconductor

    本課程含有一個具有三個組成部分的群體設計作業，覆蓋半導體的： （ 1 ）物理結構， （ 2 ）聲子譜，以及（ 3 ）帶結構。
  15. After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate

    運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。
  16. The band structure reveals the form of the impurity levels due to the substitutional impurity in semiconductors

    摻雜模型的能帶結構顯示，由於在半導體母體中進行雜質原子取代而形成了雜質能級。
  17. With a broaden and likely direct band gap, porous silicon has a different band structure to that of the bulk silicon. thus the porous silicon can emit at room temperature

    多孔硅改變了體硅的能帶結構，使禁帶展寬，並由間接帶隙向直接帶隙轉變，實現了室溫發光。
  18. Having developed two theorems in the present thesis on the degeneracy properties of the photonic crystal in the super cell, i can give how the degeneracy will change in the band structure of the photonic crystal corresponds to the change of the translational symmetry of the photonic crystal

    為了研究平易對稱性對光子晶體頻帶的影響，我在超包（ supercell ）中詳細研究了頻帶簡並的變化，並發展了幾個決定這些簡並變化的定理。
  19. These interactions varies the band structure of phthalocyanine, accordingly change the absorption spectrum of mpc films

    分子間的相互作用使酞菁能帶結構改變，吸收譜峰產生相應位移。
  20. Topics covered include : crystal lattices, electronic energy band structures, phonon dispersion relatons, effective mass theorem, semiclassical equations of motion, and impurity states in semiconductors, band structure and transport properties of selected semiconductors, and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling

    被覆蓋的論題包括：晶格、電子能帶結構、聲子色散關系、有效質量理論、半經典運動方程和半導體中的非純態、選擇性半導體的帶結構和輸運性質固體量子理論與準費米能級以及用於器件建模的玻爾茲曼輸運理論之間的聯系。
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