bandgap 中文意思是什麼

bandgap 解釋
帶隙
  1. Based on the current signal from the proceeding stage, the first order - modulator designed could be simplified in the precondition of performance satisfaction, and it is good in accomplishing signal conversion and could be incorporated with the forestage bandgap circuit

    根據前級溫度傳感電路的電流信號，在滿足性能要求的前提下盡量簡化電路，設計出的一階-調制電路不但很好地完成了信號轉換，而且更符合一體化結構的要求。
  2. 2. the optical transmission spectra of batio3 thin films annealed at different temperatures on fused quartz substrates are measured. the bandgap energies calculated from their optical transmission spectra are larger than that of single crystals reported in the literatures, whereas for poor - crystallized films with lower annealing temperature, their bandgap energy values are much larger than that of single crystals

    發現batio3多晶薄膜的光學帶隙大於文獻報導的單晶薄膜的光學帶隙，對于結晶性好的薄膜，其光學帶隙接近於單晶值，退火溫度越低，結晶性越差，與單晶的光學帶隙相差越大。
  3. Photonic bandgap properties of photonic crystals with a complicated periodic structure

    復周期結構光子晶體的光子能帶特性研究
  4. Two kinds of filters are presented : by transferring the conventional waveguide cavity filter to the siw, a narrow bandstop filter is designed and simulated, get characteristic of narrow - band bandstop filtering. for example, relative bandwidth 1. 2 %, most attenuation of 48db in band. electromagnetic bandgap ( ebg ) structures present “ forbidden band ” characteristics, siw features high - pass characteristics, so bandpass filters can be composed by combing ebg and siw

    本論文提出了兩種基片集成波導濾波器結構:將傳統的腔體濾波器概念運用於基片集成波導結構，設計出了一種窄帶帶阻濾波器，對其進行模擬，得到了窄帶帶阻濾波特性，如相對帶寬為1 . 2 % ，最大衰減為48db 。
  5. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  6. The finite element method incorporated with floquet theorem is used to solve the 2 - dimentsional scattering problem of dielectric electromagnetic bandgap upon which a plane wave is oblique or perpendicular incident

    採用有限元和floquet定理相結合的方法，對不同參量的二維介質電磁帶隙ebg結構的反射和傳輸特性進行了研究。
  7. In the reflected wave, the reflectivity of forbidden band lowers quickly with the extinction coefficient increment, when the extinction coefficient increases to 0. 05, there is already no obvious photonic bandgap

    得出：在反射波中，禁帶的反射率隨消光系數的增加而迅速降低，當消光系數增加到0 . 05時，已經不存在明顯的能帶。
  8. This converter includes not only analog parts such as the bandgap voltage reference, voltage pump, sample / hold unit, one bit comparator of high precision, multiply - by - two and difference unit, but also digital parts such as register and multiplexer. so the design of this type of converter is mixed signal design

    模數轉換器的內部電路包括基準源、降壓模塊、抽樣保持電路單元、高精度的1bit比較器、倍乘作差單元等模擬電路模塊，以及寄存器組、選擇器等數字電路模塊，屬于數模混合電路。
  9. The advantage of electro-absorption as a detector is that it is not necessary to fabricate a localized region of different bandgap.

    利用電吸收製作探測器的優點在於不必制備出有不同帶隙的局部區域。
  10. A pmc structure with a complete photonic bandgap has been designed

    設計出了具有完全光子禁帶的pmc結構。
  11. Wide bandgap semiconductor

    寬禁帶半導體
  12. Wide bandgap emitter

    寬禁帶發射極
  13. Measurement procedures for resolution and efficiency of wide - bandgap semiconductor detectors of ionizing radiation

    離子輻射的寬能帶隙半導體探測器的分辨和功效的測量規程
  14. According to the theory of the bandgap reference, a ptat current generator was designed, then the proportional voltage value to temperature could be achieved

    利用帶隙基準原理設計獲得與絕對溫度成正比（ ptat ）電流，進而獲得與溫度成正比的電壓值。
  15. The radiation pattern of the antenna is more rotationally symmetric, and a more reduction on the sidelobe levels of the antenna is achieved as compared to the antenna with the corrugated soft surface. in conclusion, in the present thesis both theoretical and experimental research works have been carried out intensively on patch antennas based on photonic - bandgap structures. it is shown that our photonic bandgap structures can greatly improve the performance of the patch antennas

    該平面圓環結構軟表面天線是在空氣介質的皺褶圓環結構軟表面天線的基礎上改進得到，為了便於比較，我們首先研究了空氣介質的皺褶圓環結構軟表面天線，用fdtd方法並結合pml吸收邊界條件對該天線的性能進行了研究，結果表明天線的帶寬增加，天線的軸對稱性得到了很大改善， e面和h面方向圖的波束幾乎重合，天線的旁瓣和背瓣受到很大的抑制。
  16. Digital to analog converter, analog integrated filter, bandgap reference and high drive capability operational amplifier are indispensability basic circuit of communication system

    數模轉換器、模擬集成濾波器、基準電壓源和高驅動能力運放等電路是通信系統中不可缺少的基本電路。
  17. The bandgap energy of ar gas c60 thin film is 2. 24 ev, and the bandgap energy of n2 gas film is 2. 09 ev. both are larger than that of vacuum c60 thin films ( 2. 02 ev )

    用直接躍遷吸收邊關系得出在氬氣和氮氣中制備的c60薄膜的禁帶寬度分別為2 . 24ev和2 . 09ev ，均比在真空下生長的c60薄膜禁帶寬度（ 2 . 02ev ）要大。
  18. Gan has d1rect, wide bandgap und is one of the ii1ost promising lnateria1. 1t ' s good e1ectrica1, opt ica1 characteristi cs and excel1ent lllecllaniczl1 properties make it one of the most ideal choices for short wave photoe1ectron devices, such as u1 travio1et photodetectors

    Gan是最有前景的直接躍遷寬帶隙半導體材料之一，它具有優良的光電性質和優異的機械性能，被認為是制備短波長光電子器件的最佳材料之一。
  19. Silicon bandgap temperature sensor

    硅帶溫度傳感器
  20. The bandgap of the double heterostructure was only 0. 86μm, yet up to 1ma of photo-current was detected.

    雙異質結的帶隙僅為086m，迄今探測到的光電達1mA。
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